Lithium-stuffed garnet electrolytes with secondary phase inclusions

ABSTRACT

The instant disclosure sets forth multiphase lithium-stuffed garnet electrolytes having secondary phase inclusions, where-in these secondary phase inclusions are material(s) which is/are not a cubic phase lithium-stuffed garnet but which is/are entrapped or enclosed within a lithium-stuffed garnet. When the secondary phase inclusions described herein are included in a lithium-stuffed garnet at 30-0.1 volume %, the inclusions stabilize the multiphase matrix and allow for improved sintering of the lithium-stuffed garnet. The electrolytes described herein, which include lithium-stuffed garnet with secondary phase inclusions, have an improved sinterability and density compared to phase pure cubic lithium-stuffed garnet having the formula Li7La3Zr2O12.

BACKGROUND OF THE INVENTION

Cleaner forms of storing energy are in great demand. Examples of cleanenergy storage include rechargeable lithium (Li) ion batteries (i.e.,Li-secondary batteries), in which Li⁺ ions move from the negativeelectrode to the positive electrode during discharge. In numerousapplications (e.g., portable electronics and transportation), it isadvantageous to use a solid-state Li ion battery which consists ofprimarily all solid-state materials as opposed to one that includesliquid components (e.g., flammable liquid electrolytes which includeorganic solvents such as alkylene carbonates), due to safety as well asenergy density considerations. Solid-state Li ion batteries, whichincorporate a Li-metal negative electrode, advantageously, havesignificantly lower electrode volumes and correspondingly increasedenergy densities.

Components of a solid-state battery include the solid-state electrolyte,which electrically isolates the positive and negative electrodes, and,often, also a catholyte, which is mixed with a positive electrode activematerial to improve the ionic conductivity in the space between positiveelectrode active material particles within the positive electroderegion. Limitations in solid-state electrolytes have been a factor inpreventing the commercialization of solid-state batteries. A thirdcomponent, in some Li ion solid-state batteries, is an anolyte, which islaminated to, or in contact with, a negative electrode material (e.g.,Li-metal). Many currently available electrolyte, catholyte, and anolytematerials, however, may not be stable within solid-state batteryoperating voltage ranges or when in contact with certain cathode (e.g.,metal fluorides) or anode active materials (e.g., Li-metal).

Li-stuffed garnet is a class of oxides that has the potential to besuitable for use as a catholyte, electrolyte, and/or, anolyte in asolid-state battery. Certain garnet materials and processing techniquesare known (e.g., U.S. Pat. Nos. 8,658,317; 8,092,941; and 7,901,658; USPatent Application Publication Nos. 2013/0085055, 2011/0281175,2014/0093785, and 2014/0170504; also Bonderer, et al. “Free-StandingUltrathin Ceramic Foils,” Journal of the American Ceramic Society, 2010,93(11):3624-3631; and Murugan, et al., Angew Chem. Int. Ed. 2007, 46,7778-7781), but these materials and techniques suffer from deficiencieswhich must be overcome for solid-state batteries to be commerciallyviable.

The state of the art teaches that lithium-stuffed garnet-basedelectrolytes, when used for Li ion rechargeable batteries, should bephase pure—cubic Li₇La₃Zr₂O₁₂, only, or cubic Li₇La₃Zr₂O₁₂ doped withthe minimal amount of Al and/or Al₂O₃ that will not form secondarycrystalline phases or inclusions in the primary cubic Li₇La₃Zr₂O₁₂phase. The state of the art teaches that to prepare a lithium-stuffedgarnet-based electrolyte with the highest Li⁺ ionic conductivity it isimportant to make the garnet phase pure—having only a single type ofcrystalline phase present. For example, the state of the art teachesthat it is important to keep the amount of Al and/or Al₂O₃ below theirsolubility limit in Li₇La₃Zr₂O₁₂ in order not to precipitate insolublesecondary crystalline phases. See, for example, Matsuda, et. al., RSCAdv., 2016, 6, 78210, which sets forth that cubic phase garnetstructures have a higher ionic conductivity than tetragonal phase garnetstructures and which also sets forth certain compositions, e.g., atetragonal phase aluminum doped garnet,Li_(7−x)Al_(y)La₃Zr_(2−x)Ta_(x)O₁₂, which remains tetragonal whenx+3y<0.4 and which transforms to a cubic garnet when the empiricalformula is

Li_(6.6−z/2)Al_(z/2)0.4La₃Zr_(1.6+z)Ta_(0.4−z)O₁₂.

Certain garnets, which don't include lithium, are known to have acertain amount of secondary phase content therein (e.g., U.S. Pat. No.8,461,535; U.S. Patent Application Publication No. 2016/0362341).

Lithium-stuffed garnet has the empirical formula Li₇La₃Zr₂O₁₂ (and isreferred to in the art as “LLZO” or “LLZ”). This composition can existin a variety of crystalline phases. For example, this composition isstable in a tetragonal phase at room temperature and this tetragonalphase has a low lithium-conductivity. This composition also forms acubic phase, which has a much higher conductivity than the tetragonalphase. The cubic phase is formed by doping LLZO with aliovalent dopantssuch as aluminum (Al), niobium (Nb), tantalum (Ta) and similar dopants.Another example of LLZO is Li_(7−3x)Al_(x)La₃Zr₂O₁₂, wherein x is arational number greater than zero and less than or equal to 0.2. InLi_(7−3x)Al_(x)La₃Zr₂O₁₂, the solubility limit of aluminum (Al) in theLLZO lattice is near 0.2. This means that if more than 0.2 moles of Alper LLZO mole are present, that additional amount of Al will precipitateout as a secondary phase (e.g., LaAlO₃, LiAlO₂, and La₂Zr₂O₇). The stateof the art teaches that LLZO should not be doped with Al beyond thissolubility limit because these secondary phases will precipitate. Forexample, see Kotobuki, et. al., Journal of Power Sources 196 (2011)7750-7754, which teaches that La₂Zr₂O₇ impurities (a type of secondaryphase) should be avoided during the formation of LLZO in order toproduce a phase pure LLZO-based electrolyte which has a high Li ionconductivity.

Further improvements in garnet-based electrolytes are needed in order tocommercialize solid-state batteries. Set forth herein are suchimprovements in addition to other disclosures.

SUMMARY OF THE INVENTION

In a first embodiment, set forth herein is a multiphase thin filmsolid-state electrolyte which includes a primary cubic phaselithium-stuffed garnet characterized by the chemical formulaLi_(A)La_(B)Al_(c)M″_(D)Zr_(E)O_(F), wherein 5<A<8, 1.5<B<4, 0.1<C<2,0≤D<2; 1<E<3, 10<F<13, and M″ is selected from the group consisting ofMo, W, Nb, Y, Ta, Ga, Sb, Ca, Ba, Sr, Ce, Hf, and Rb; and a secondaryphase inclusion(s) in the primary cubic phase lithium-stuffed garnet;further, wherein the primary cubic phase lithium-stuffed garnet ispresent in the multiphase thin film solid-state electrolyte at about70-99.9 vol % with respect to the volume of the multiphase thin filmelectrolyte; and the secondary phase inclusion(s) is/are present in themultiphase thin film solid-state electrolyte at about 30-0.1 vol % withrespect to the volume of the multiphase thin film electrolyte.

In a second embodiment, set forth herein is a composition which includesa primary cubic phase lithium-stuffed garnet characterized by thechemical formula Li_(A)La_(B)Al_(c)M″_(D)Zr_(E)O_(F), wherein 5<A<8,1.5<B<4, 0.1<C<2, 0≤D<2; 1<E<3, 10<F<13, and M″ is selected from thegroup consisting of Mo, W, Nb, Y, Ta, Ga, Sb, Ca, Ba, Sr, Ce, Hf, andRb; a secondary phase inclusion(s) in the primary cubic phaselithium-stuffed garnet; wherein: the primary cubic phase lithium-stuffedgarnet is present at about 70-99.9 vol % with respect to the volume ofthe composition; and the secondary phase inclusion(s) is/are present atabout 30-0.1 vol % with respect to the volume of the composition.

In a third embodiment, set forth herein is a process of making acomposition, wherein the compositions includes a primary cubic phaselithium-stuffed garnet characterized by the chemical formulaLi_(A)La_(B)Al_(c)M″_(D)Zr_(E)O_(F), wherein 5<A<8, 1.5<B<4, 0.1<C<2,0≤D<2; 1<E<3, 10<F<13, and M″ is selected from the group consisting ofMo, W, Nb, Y, Ta, Ga, Sb, Ca, Ba, Sr, Ce, Hf, and Rb; a secondary phaseinclusion(s) in the primary cubic phase lithium-stuffed garnet; whereinthe primary cubic phase lithium-stuffed garnet is present at about70-99.9 vol % with respect to the volume of the composition; and thesecondary phase inclusion is present at about 30-0.1 vol % with respectto the volume of the composition; the process includes the followingsteps: (a) providing a mixture of chemical precursors to thecomposition, wherein the amount of Al in the mixture exceeds thesolubility limit of Al in LLZO; and (b) calcining the mixture by heatingit to at least 800° C.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 shows a scanning electron microscope (SEM) image and focused ionbeam (FIB) microscopy image of the sintered thin film lithium-stuffedgarnet from Example 8. The SEM images show the volume fraction ofsecondary phases in the lithium-stuffed garnet. FIG. 1A shows a planview of the lithium-stuffed garnet thin film with secondary phaseinclusions. FIG. 1B shows a focused ion-beam (FIB) cross-section showingthe second phase inclusions LiAlO₂ and Li₂ZrO₃.

FIG. 2 shows overlaid x-ray powder diffraction (XRD) patterns of thecalcined powder prepared in Example 1 (bottom plot) and a sinteredpellet prepared in Example 2 (top plot).

FIG. 3 shows overlaid x-ray powder diffraction (XRD) patterns of thecalcined powder prepared in Example 3 (top plot) and a sintered pellet wprepared in Example 4 (bottom plot).

FIG. 4 shows the x-ray diffraction (XRD) pattern results from theannealing experiment in Example 9.

FIG. 5 shows a scatter plot of d₅₀ grain sizes for the sintered filmsprepared in Example 9, wherein grain size is plotted as a function oflithium (Li) content in the lithium-stuffed garnet and of sinteringtemperature.

FIG. 6 shows a plot of d₅₀ grain size for the sintered films prepared inExample 9 as a function of the aluminum (Al) content in thelithium-stuffed garnet and of the weight percent of the secondary phaseinclusions.

FIG. 7 shows bulk conductivity plots for the sintered films prepared inExample 9 as a function of the Li content in the lithium-stuffed garnet,also as a function of the Al content in the lithium-stuffed garnet, andas a function of the sintering temperature at which the lithium-stuffedgarnet film was sintered. The y-axis shows the molar amount of Li in thelithium-stuffed garnet. The x-axis shows the molar amount of Al in thelithium-stuffed garnet. The top portion of each plot indicates thetemperature at which the sintered film was sintered.

FIG. 8 shows the surface area specific resistance (ASR) for the sinteredthin film prepared in Example 8.

FIG. 9 shows an SEM image of a sintered thin film from Example 8 usedfor back-scattered imaging and quantification of primary and secondaryphases.

FIG. 10 shows a plot of Normalized Discharge Energy as a function ofCumulative Cycle Index for the electrochemical cell described in Example10.

FIG. 11 shows the ring-on-ring flexural strength test results from theexperiment Example 11. The y-axis shows fracture strength. The x-axisshows arbitrary sample reference numbers.

DETAILED DESCRIPTION OF THE INVENTION

Disclosed herein are processes for making and using thin filmlithium-stuffed garnet electrolytes, which, in addition to a primarycubic phase lithium-stuffed garnet, also incorporate secondary phaseinclusions, such as but not limited to tetragonal garnet, lithiumaluminate, lithium zirconate, lanthanum aluminate, lanthanum zirconate,lanthanum oxide, and lithium lanthanum oxide. In contrast to known phasepure cubic phase lithium-stuffed garnets materials, the processes andmaterials set forth herein are uniquely designed for electrochemicaldevices (e.g., solid-state batteries), and have a microstructure,stability between 0 and 4.5 Volts (V) versus (v.) Lithium (Li), chemicalcompatibility with Li metal, mechanical strength, and sinterability tohigh density, which improves upon that which is known in the relevantart. For example, by far exceeding the solubility limit of Al in LLZO,the instant disclosure shows how to produce lithium-stuffed garnetelectrolytes with secondary phase inclusions that have electrochemicaland processing properties that are improved upon those known in therelevant art.

The following description is presented to enable one of ordinary skillin the art to make and use the inventions set forth herein and toincorporate these inventions in the context of particular applications.Various modification, as well as a variety of uses in differentapplication will be clear to those skilled in the art, and the generalprinciples defined herein may be applied to a wide range of embodiments.Thus the present invention is not intended to be limited to theembodiments present, but is to be accorded the widest scope consistedwith the principles and novel features disclosed herein.

The reader's attention is directed to all paper and documents which arefiled concurrently with this specification and which are open to publicinspection with this specification, and the contents of all such papersand documents are incorporated herein by reference. Unless expresslystated otherwise, each feature disclosed is one example only of a seriesof equivalent or similar features.

Furthermore, any element in a claim that does not explicitly state“means for” performing a specified function, or “step for” performing aspecific function is not to be particularly interpreted as a “means” or“Step” clause as specified in post-America Invents Act 35 U.S.C. Section112(f).

Please note, if used, the labels left, right, front, back, top, bottom,forward, reverse, clockwise, and counter clockwise have been used forconvenience purposes only, and are not intended to imply any particularfixed direction. Instead, these are used to reflect relative locationsand/or directions between various portions of an object.

I. Definitions

As used herein, the term “about,” when qualifying a number, e.g., 15%w/w, refers to the number qualified and optionally the numbers includedin a range about that qualified number that includes±10% of the number.For example, about 15 w/w includes 15% w/w as well as 13.5% w/w, 14%w/w, 14.5% w/w, 15.5% w/w, 16% w/w, or 16.5% w/w. For example, “about75° C.,” includes 75° C. as well 68° C., 69° C., 70° C., 71° C., 72° C.,73° C., 74° C., 75° C., 76° C., 77° C., 78° C., 79° C., 80° C., 81° C.,82° C., or 83° C.

As used herein, the phrase “at least one member selected from thegroup,” includes a single member from the group, more than one memberfrom the group, or a combination of members from the group. At least onemember selected from the group consisting of A, B, and C includes, forexample, A, only, B, only, or C, only, as well as A and B as well as Aand C as well as B and C as well as A, B, and C or any combination of A,B, and C.

As used herein, the term “electrolyte,” refers to an ionicallyconductive and electrically insulating material. Electrolytes are usefulfor electrically insulating the positive and negative electrodes of arechargeable battery while allowing for the conduction of ions, e.g.,Li⁺, through the electrolyte.

As used herein, the phrase “lithium-stuffed garnet” refers to oxidesthat are characterized by a crystal structure related to a garnetcrystal structure. Lithium-stuffed garnets include compounds having theformula Li_(A)La_(B)M′_(c)M″_(D)Zr_(E)O_(F), orLi_(A)La_(B)M′_(C)M″_(D)Nb_(E)O_(F), wherein 4<A<8.5, 1.5<B<4, 0≤C≤2,0≤D≤2; 0≤E<2, 10<F<13, and M′ and M″ are each, independently in eachinstance selected from Al, Mo, W, Nb, Sb, Ca, Ba, Sr, Ce, Hf, Rb, andTa; or Li_(a)La_(b)Zr_(c)Al_(d)Me″_(e)O_(f), wherein 5<a<7.7; 2<b<4;0<c≤2.5; 0≤d<2; 0≤e<2, 10<f<13 and Me″ is a metal selected from Nb, V,W, Mo, and Sb. Garnets, as used herein, also include those garnetsdescribed above that are doped with Al or Al₂O₃. Also, garnets as usedherein include, but are not limited to, Li_(x)La₃Zr₂O₁₂+yAl₂O₃. As usedherein, garnet does not include YAG-garnets (i.e., yttrium aluminumgarnets, or, e.g., Y₃Al₅O₁₂). As used herein, garnet does not includesilicate-based garnets such as pyrope, almandine, spessartine,grossular, hessonite, or cinnamon-stone, tsavorite, uvarovite andandradite and the solid solutions pyrope-almandine-spessarite anduvarovite-grossular-andradite. Garnets herein do not includenesosilicates having the general formula X₃Y₂(SiO₄)₃ wherein X is Ca,Mg, Fe, and, or, Mn; and Y is Al, Fe, and, or, Cr.

As used herein, the phrase “phase pure” refers to a materialcharacterized as having a single phase (i.e., type of solid matter) asdetermined by x-ray powder diffraction (XRD) analysis. For example,phase pure cubic lithium-stuffed garnet is a material having a cubiccrystalline structure. The material includes lithium (Li), lanthanum(La), zirconium (Zr), oxygen (O) and optionally dopant atoms (e.g., Al)bonded in a polycrystalline array, wherein each unit cell in thecrystallite has cubic symmetry. Phase pure lithium-stuffed garnetincludes the solid material, Li₇La₃Zr₂O₁₂, wherein the amounts of Li,La, Zr, and O may vary so long as the material remains polycrystalline,with cubic crystalline symmetry. Li₇La₃Zr₂O₁₂ can form several crystalphases. One phase that Li₇La₃Zr₂O₁₂ forms in addition to a cubic phaseis a tetragonal crystalline phase which includes Li, La, Zr, and O atomsbonded in a polycrystalline array, wherein each unit cell within thecrystallite has tetragonal symmetry. Phase pure cubic lithium-stuffedgarnet is a lithium-stuffed garnet that is at least 99% or more byvolume cubic lithium-stuffed garnet. Phase pure cubic lithium-stuffedgarnet is phase pure even though the respective amounts of Li, La, Zr,O, and/or Al change so long as the lithium-stuffed garnet remainspolycrystalline, with cubic crystalline symmetry. For example,Li₇La₃Zr₂O₁₂ may be doped with Al or Al₂O₃ and remain phase pure so longas the doped composition, e.g., Li₇La₃Zr₂O₁₂Al₂O₃, is polycrystalline,with each unit cell having cubic crystalline symmetry. A lithium-stuffedgarnet that includes more than trace amounts (more than 1% by volume) ofsecondary phases is not phase pure.

As used herein, the phrase “secondary phase” refers to a distinct phasewithin or adjacent to a primary phase, wherein the primary phase is thephase present is the greatest amount. For example, a small amount ofLiAlO₂ phase within a bulk Li₇La₃Zr₂O₁₂Al_(x) phase is a secondaryphase. The secondary phase may be identified and quantified, forexample, by quantitative x-ray powder diffraction analysis. Thesecondary phase may be identified and quantified, for example, byquantitative electron microscopy, e.g., SEM in back-scattered electronimaging mode, which shows density contrast. As another example, glancingincidence XRD may be used to identify small secondary phases on thesurface of a body, such as but not limited to a pellet or thin film. Asanother example, selected area x-ray diffraction patterns intransmission electron microscopy may identify microscopic secondaryphases. Some secondary phases may be amorphous, weakly diffracting, orthin or small enough as to not be easily identifiable via diffractiontechniques. When cubic lithium-stuffed garnet is the primary phase(i.e., the phase present in largest amount by volume), the secondaryphases include, but are not limited to tetragonal phase garnet;La₂Zr₂O₇; La₂O₃; LaAlO₃; La₂(Li_(0.5)Al_(0.5))O₄; LiLaO₂; LiZr₂O₃;Li_(a)Zr_(b)O_(c), wherein 1≤a≤8, 1≤b≤2, and 1≤c≤7, and whereinsubscripts a, b, and c are selected so that Li_(a)Zr_(b)O_(c) is chargeneutral; Li_(g)Al_(h)O_(i), wherein 1≤g≤5, 1≤h≤5, and 2≤i≤8, and whereinsubscripts g, h, i are selected so that Li_(g)Al_(h)O_(i) is chargeneutral; La_(d)Ta_(e)O_(f), wherein 1≤d≤3, 1≤e≤7, and 4≤f≤19, andwherein subscripts d, e, and f are selected so that La_(d)Ta_(e)O_(f) ischarge neutral; Li_(r)Ta_(s)O_(t), wherein 1≤r≤2, 1≤s≤3, and 3≤t≤7, andwherein subscripts r, s, and t are selected so that Li_(r)Ta_(s)O_(t) ischarge neutral; La_(n)Nb_(p)O_(q), wherein 1≤n≤3, 1≤p≤7, and 4≤q≤19, andwherein subscripts n, p, and q are selected so that La_(n)Nb_(p)O_(q) ischarge neutral; Li_(u)Nb_(v)O_(x), wherein 1≤u≤3, 1≤p≤3, and 3≤x≤9, andwherein subscripts u, v, and x are selected so that Li_(u)Nb_(v)O_(x) ischarge neutral; and any combination thereof.

As used herein, the phase “multiphase thin film solid-stateelectrolyte,” refers to a solid-state electrolyte in a film formatwherein the film is 10 nm to 100 μm in thickness and wherein the filmincludes at least two different phases, e.g., cubic lithium-stuffedgarnet and LiZr₂O₃.

As used herein, the phase “primary cubic phase lithium-stuffed garnet,”refers to a material in which the phase present in largest amounts iscubic phase lithium-stuffed garnet.

As used herein, the phase “secondary phase inclusion in the primarycubic phase lithium-stuffed garnet,” refers to a secondary phase that isentrapped, surrounded, enclosed by, included within or otherwiseencapsulated by a primary cubic phase lithium-stuffed garnet. Thesecondary phase inclusion may be included within amorphous orcrystalline lithium-stuffed garnet.

As used herein, the phrase “garnet precursor chemicals” or “chemicalprecursor to a Garnet-type electrolyte” or “chemical precursors,” refersto chemicals, which react to form a lithium-stuffed garnet materialdescribed herein. These chemical precursors include, but are not limitedto lithium hydroxide (e.g., LiOH), lithium oxide (e.g., Li₂O), zirconiumoxide (e.g., ZrO₂), zirconium nitrate, zirconium acetate, lanthanumoxide (e.g., La₂O₃), lanthanum nitrate, lanthanum acetate, aluminumoxide (e.g., Al₂O₃), aluminum (e.g., Al), aluminum nitrate (e.g.,AlNO₃), aluminum nitrate nonahydrate, aluminum (oxy) hydroxide (gibbsiteand boehmite), gallium oxide, corundum, niobium oxide (e.g., Nb₂O₅),tantalum oxide (e.g., Ta₂O₅).

As used herein the phrase “garnet-type electrolyte,” or “garnet-basedelectrolyte,” refers to an electrolyte that includes a garnet orlithium-stuffed garnet material described herein as the ionic conductor.

As used herein, the term “grains” refers to domains of material withinthe bulk of a material that have a physical boundary that distinguishesthe grain from the rest of the material. For example, in some materialsboth crystalline and amorphous components of a material, often havingthe same chemical composition, are distinguished from each other by theboundary between the crystalline component and the amorphous component.As another example, two crystalline “grains”, or regions of differentorientation, have a boundary where they meet. The approximate diameterof the regions between boundaries of a crystalline component with anorientation, or of an amorphous component, is referred herein as thegrain size.

As used herein, the phrase “d₅₀ grain size,” “d₅₀ diameter,” or “mediandiameter (d₅₀)” refers to the median size, in a distribution of sizes,measured by microscopy techniques or other particle size analysistechniques, such as, but not limited to, scanning electron microscopy ordynamic light scattering. D₅₀ by number describes a characteristicdimension of particles in a collection of particles at which 50% of theparticles in the collection are smaller than the recited size. D₅₀ byvolume describes a characteristic dimension of particles in a collectionof particles at which 50% of the volume is occupied by smallerparticles. Unless otherwise specified, a D₅₀ herein refers to a D₅₀ byvolume. D₅₀ by area describes a characteristic dimension of particles ina collection of particles at which 50% of the area is occupied bysmaller particles; area D₅₀ may be measured by cross-section electronmicroscopy.

As used herein, the phrase “subscripts and molar coefficients in theempirical formulas are based on the quantities of raw materialsinitially batched to make the described examples” means the subscripts,(e.g., 7, 3, 2, 12 in Li₇La₃Zr₂O₁₂ and the coefficient 0.35 in0.35Al₂O₃) refer to the respective elemental ratios in the chemicalprecursors (e.g., LiOH, La₂O₃, ZrO₂, Al₂O₃) used to prepare a givenmaterial, (e.g., Li₇La₃Zr₂O₁₂.0.35Al₂O₃).

As used herein, the term “rational number” refers to any number, whichcan be expressed as the quotient or fraction (e.g., p/q) of two integers(e.g., p and q), with the denominator (e.g., q) not equal to zero.Example rational numbers include, but are not limited to, 1, 1.1, 1.52,2, 2.5, 3, 3.12, and 7.

As used herein, the phrases “electrochemical cell” or “battery cell”shall, unless specified to the contrary, mean a single cell including apositive electrode and a negative electrode, which have ioniccommunication between the two using an electrolyte. In some embodiments,a battery or module includes multiple positive electrodes and/ormultiple negative electrodes enclosed in one container, i.e., stacks ofelectrochemical cells. A symmetric cell is unless specified to thecontrary a cell having two Li metal anodes separated by a solid-stateelectrolyte.

As used herein the phrase “electrochemical stack,” refers to one or moreunits which each include at least a negative electrode (e.g., Li, LiC₆),a positive electrode (e.g., Li-nickel-manganese-oxide or FeF₃,optionally combined with a solid state electrolyte or a gelelectrolyte), and a solid electrolyte (e.g., lithium-stuffed garnetelectrolyte set forth herein) between and in contact with the positiveand negative electrodes. In some examples, between the solid electrolyteand the positive electrode, there is an additional layer comprising agel electrolyte. An electrochemical stack may include one of theseaforementioned units. An electrochemical stack may include several ofthese aforementioned units arranged in electrical communication (e.g.,serial or parallel electrical connection). In some examples, when theelectrochemical stack includes several units, the units are layered orlaminated together in a column. In some examples, when theelectrochemical stack includes several units, the units are layered orlaminated together in an array. In some examples, when theelectrochemical stack includes several units, the stacks are arrangedsuch that one negative electrode is shared with two or more positiveelectrodes. Alternatively, in some examples, when the electrochemicalstack includes several units, the stacks are arranged such that onepositive electrode is shared with two or more negative electrodes.Unless specified otherwise, an electrochemical stack includes onepositive electrode, one solid electrolyte, and one negative electrode,and optionally includes a gel electrolyte layer between the positiveelectrode and the solid electrolyte.

As used herein, the phrase “solid-state battery” refers to a batterywherein all components are in a non-liquid state; they may be gel,ceramic, solid, and/or polymer. The catholyte of a solid-state batterymay be a polymer, gel, or solid. The electrolyte separator of asolid-state battery may be a polymer, gel, or solid. A gel in asolid-state battery may be infiltrated with a liquid, but the gel,macroscopically, has non-liquid state properties.

As used herein, the phrase “gel” refers to a material that has a storagemodulus that exceeds the loss modulus as measured by rheometry. A gelmay be a polymer swollen or infiltrated by a liquid, or a two-phasematerial with a porous polymer with pores occupied by liquid. A gel doesnot appreciably flow in response to gravity over short times (minutes).Examples include, but are not limited to, a PVDF-HFP with electrolytesolvent and salt, and PAN with electrolyte solvent and salt.

As used herein, the phrases “gel electrolyte,” unless specifiedotherwise, refers to a suitable Li⁺ ion conducting gel or liquid-basedelectrolyte, for example, those gels set forth in U.S. Pat. No.5,296,318, entitled RECHARGEABLE LITHIUM INTERCALATION BATTERY WITHHYBRID POLYMERIC ELECTROLYTE. A gel electrolyte has lithium ionconductivity of greater than 10⁻⁵S/cm at room temperature, a lithiumtransference number between 0.05-0.95, and a storage modulus greaterthan the loss modulus at some temperature. A gel may comprise a polymermatrix, a solvent that gels the polymer, and a lithium containing saltthat is at least partly dissociated into Li⁺ ions and anions.

As used herein, the phrase “positive electrode” refers to the electrodein a secondary battery towards which positive ions, e.g., Li⁺, conductduring discharge of the battery. As used herein, the phrase “negativeelectrode” refers to the electrode in a secondary battery from wherepositive ions, e.g., Li⁺, conduct during discharge of the battery. In abattery comprised of a Li-metal electrode and a conversion chemistryelectrode (i.e., active material; e.g., NiF_(x)), the electrode havingthe conversion chemistry materials is referred to as the positiveelectrode. In some common usages, cathode is used in place of positiveelectrode, and anode is used in place of negative electrode. When aLi-secondary battery is charged, Li ions conduct from the positiveelectrode (e.g., NiF_(x)) towards the negative electrode (Li-metal).When a Li-secondary battery is discharged, Li ions conduct towards thepositive electrode (e.g., NiF_(x); i.e., cathode) and from the negativeelectrode (e.g., Li-metal; i.e., anode).

As used herein the phrase “active electrode material,” or “activematerial,” refers to a material that is suitable for use as a Lirechargeable battery and which undergoes a mostly reversible chemicalreaction during the charging and discharging cycles. For examples, and“active cathode material,” includes a metal fluoride that converts to ametal and lithium fluoride during the discharge cycle of a Lirechargeable battery.

As used herein the phrase “active anode material” refers to an anodematerial that is suitable for use in a Li rechargeable battery thatincludes an active cathode material as defined above. In some examples,the active material is Lithium metal. In some of the processes set forthherein, the sintering temperatures are high enough to melt the Lithiummetal used as the active anode material.

As used herein, the phrase “current collector” refers to a component orlayer in a secondary battery through which electrons conduct, to or froman electrode in order to complete an external circuit, and which are indirect contact with the electrode to or from which the electronsconduct. In some examples, the current collector is a metal (e.g., Al,Cu, or Ni, steel, alloys thereof, or combinations thereof) layer, whichis laminated to a positive or negative electrode. During charging anddischarging, electrons conduct in the opposite direction to the flow ofLi ions and pass through the current collector when entering or exitingan electrode.

As used herein, the term “laminating” refers to the process ofsequentially depositing a layer of one precursor specie, e.g., a lithiumprecursor specie, onto a deposition substrate and then subsequentlydepositing an additional layer onto an already deposited layer using asecond precursor specie, e.g., a transition metal precursor specie. Thislaminating process can be repeated to build up several layers ofdeposited vapor phases. As used herein, the term “laminating” alsorefers to the process whereby a layer comprising an electrode, e.g.,positive electrode or cathode active material comprising layer, iscontacted to a layer comprising another material, e.g., garnetelectrolyte. The laminating process may include a reaction or use of abinder which adheres of physically maintains the contact between thelayers which are laminated.

As used herein, the phrase “green film” refers to an unsintered filmincluding at least one member selected from garnet materials, precursorsto garnet materials, binder, solvent, carbon, dispersant, orcombinations thereof.

As used herein, the phrase “solid-state catholyte,” or the term“catholyte” refers to an electrolyte that is intimately mixed with, orsurrounded by, a cathode (i.e., positive electrode) active material(e.g., a metal fluoride optionally including lithium).

As used herein, the phrase “film” refers to a thin membrane of less than0.5 mm thickness and greater than 5 mm in a lateral dimension. A “film”may be produced by a continuous process such as tape-casting, slipcasting, or screen-printing. A film may be a “green film”, i.e. beforeheating, calcining or sintering, or a “sintered film”, i.e. aftersintering at elevated temperatures to cause densification.

As used herein, the phrase “film thickness” refers to the distance, ormedian measured distance, between the top and bottom faces of a film. Asused herein, the top and bottom faces refer to the sides of the filmhaving the largest surface area.

As used herein, the phrase “pellet” refers to a body of materialproduced by a batch process with at least one compaction step. Thepellet may be a “green pellet”, i.e., before heating or sintering, or a“sintered pellet”, i.e., after heating or sintering at elevatedtemperatures to cause densification.

As used herein, the phrase “monolith” refers to a body of material that,on a length scale of ≥0.1 mm, is substantially uniform or homogeneous instructure and composition.

As used herein the phrase “sintering the film,” refers to a processwhereby a thin film, as described herein, is densified (made denser, ormade with a reduced porosity) using heat and or pressure. Sinteringincludes the process of forming a solid mass of material by heat and/orpressure without melting it to the point of complete liquification.

As used herein the term “binder,” refers to a material that assists inthe adhesion of another material. For example, as used herein, polyvinylbutyral is a binder because it is useful for adhering garnet materials.Other binders include polycarbonates. Other binders may includepolymethylmethacrylates. These examples of binders are not limiting asto the entire scope of binders contemplated here but merely serve asexamples.

As used herein the phrase “casting a film,” refers to the process ofdelivering or transferring a liquid or a slurry into a mold, or onto asubstrate, such that the liquid or the slurry forms, or is formed into,a film. Casting may be done via doctor blade, meyer rod, comma coater,gravure coater, microgravure, reverse comma coater, slot die, slipand/or tape casting, and other processes known to those skilled in theart.

As used herein the phrase “stable at voltages greater than about 3.8V,”refers to a material that does not undergo a destructive chemicalreaction when a voltage of more than 3.8V relative to a lithiumreference electrode that is applied thereto. A destructive chemicalreaction as used herein refers to a chemical reaction that degrades thefunctionality of the material for which the material is used.

As used herein, the phrase “fracture strength,” refers to a measure offorce required to break a material, e.g., a thin film electrolyte, byinducing a crack or fracture therein. Fracture strength values recitedherein were measured using the ring on ring test. The ring-on-ring testis a measure of equibiaxial flexural strength and may be measured asspecified in the ASTM C1499-09 standard. The test is performed atambient temperature unless stated explicitly otherwise.

As used herein, the phrase “density as determined by geometricmeasurements,” refers to measurements of density obtained by physicalmass and volume measurements. Density is determined by the ratio ofmeasured mass to the measured volume. Customary techniques including theArchimedes method may be employed for such determinations. Unless statedotherwise, the density as determined by geometric measurements is theArchimedes method.

As used herein, the phrase “density as measured by the Archimedesmethod,” refers to a density measurement inclusive of closed porositybut exclusive of open porosity. The dimensions of a dry material aremeasured and the volume is calculated and recorded as V_(d); the mass ofthe dry material is measured and recorded as m_(d). Vacuum infiltrationof the material with a solvent such as toluene or IPA is then conductedby, for example, pulling a vacuum on the material for at least one hourto a pressure less than −20 inHg and then submerging the material in asolvent to infiltrate the material with the solvent for at least 30minutes. Next, the vacuum is released, while keeping the materialsubmerged in the solvent. Then, the surface liquid is wiped off of thematerial. Next, the mass, m_(w), of the material when wet is recorded.Finally, the mass, m_(s), of the material when submerged is recorded.The Archimedes bulk density is calculated as m_(d)/(m_(w)−m_(s))p_(s),where p_(s) is the solvent density, and the open porosity is(m_(w)−m_(d))/(m_(w)−m_(s)).

As used herein, the phrases “density as determined by scanning electronmicroscopy (SEM),” and “porosity as determined by SEM,” refers to theanalysis of scanning electron microscopy (SEM) images. This analysisincludes measuring the relative amounts of the electrolyte separatorwhich are porous or vacant with respect to the electrolyte separatorwhich is fully dense. The SEM images useful for this analysis includethose obtained by SEM cross-sectional analysis using focused ion beam(FIB) milling. The density measurement uses image analysis software andan SEM image. First, a user or the software assigns pixels and/orregions of an SEM image as porosity. Second, the area fraction of thoseregions is summed by the software. The porosity fraction determined bySEM is equal to the area fraction of the porous region of the image.

As used herein the phrase “free-standing thin film,” refers to a filmthat is not adhered or supported by an underlying substrate. In someexamples, free-standing thin film is a film that is self-supporting,which can be mechanically manipulated or moved without need of asubstrate adhered or fixed thereto.

II. Multiphase Films

In some examples, set forth herein is a multiphase thin film solid-stateelectrolyte which is polycrystalline and has a thickness between 10 nmand 200 μm. The majority phase in the poly-crystallites is a primarycubic phase lithium-stuffed garnet characterized by the chemical formulaLi_(A)La_(B)Al_(c)M″_(D)Zr_(E)O_(F), wherein 5<A<8, 1.5<B<4, 0.1<C<2,0≤D<2; 1<E<3, 10<F<13, and M″ is selected from the group consisting ofMo, W, Nb, Y, Ta, Ga, Sb, Ca, Ba, Sr, Ce, Hf, and Rb. Also present inthe multiphase film is a secondary phase inclusion in the primary cubicphase lithium-stuffed garnet; wherein the primary cubic phaselithium-stuffed garnet is present in the multiphase thin filmsolid-state electrolyte at about 70-99.9 vol % with respect to thevolume of the multiphase thin film electrolyte, and the secondary phaseinclusion is present in the multiphase thin film solid-state electrolyteat about 30-0.1 vol % with respect to the volume of the multiphase thinfilm electrolyte.

In some examples, the multiphase film is a sintered film made bysintering a green (i.e., unsintered) film which comprises chemicalprecursors to lithium-stuffed garnet and/or lithium-stuffed garnet. Insome examples, the amount of primary material relative to the amount ofsecondary material is greater in the sintered film than is present inthe corresponding unsintered films before the unsintered film wassintered. The multiphase thin films herein can be made, in part, byproviding green films with secondary phases, which assist in thesintering and densification of the primary phase cubic lithium-stuffedgarnet. In some examples, the green films include calcined powders,which include primary phase cubic lithium-stuffed garnet and secondaryphases, which assist in the sintering of the green film to make thesintered films herein.

In some examples, including any of the foregoing, the amount of primarycubic phase lithium-stuffed garnet and the amount of secondary phaseinclusion sum to the total amount of material in the multiphase thinfilm solid-state electrolyte.

In some examples, including any of the foregoing, the secondary phaseinclusion d₅₀ grain size is less than 10 μm.

In some examples, including any of the foregoing, the secondary phaseinclusion d₅₀ grain size is from about 1 μm to about 10 μm.

In some examples, including any of the foregoing, the primary cubicphase lithium-stuffed garnet d₅₀ grain size is smaller than thesecondary phase inclusion d₅₀ grain size.

In some examples, including any of the foregoing, the primary cubicphase lithium-stuffed garnet d₅₀ grain size is from about 10 μm to about20 μm.

In some examples, including any of the foregoing, the primary cubicphase lithium-stuffed garnet grain size d₅₀ is from about 0.5 μm-10 μm.

In some examples, including any of the foregoing, the d₉₀ grain size ofany phase in the multiphase thin film solid-state electrolyte is fromabout 1 μm to 5 μm.

In some examples, including any of the foregoing, the d₅₀ grain sizesare substantially as shown in any one of FIGS. 1 a, 1B, 9, or 12.

In some examples, including any of the foregoing, the secondary phaseinclusions are homogenously distributed in the multiphase film.

In some examples, including any of the foregoing, the secondary phaseinclusions include more than one type of secondary phase inclusions.

In some examples, including any of the foregoing, the secondary phaseinclusions include at least two, three or four types of secondary phaseinclusions.

In some examples, including any of the foregoing, the secondary phaseinclusions are homogenously distributed over a volume of 100 μm³ ormore.

In some examples, including any of the foregoing, the inclusions arehomogenously distributed over a volume of 1000 μm³ or more.

In some examples, including any of the foregoing, the ratio of thesecondary phase inclusion d₅₀ grain size to the primary cubic phaselithium-stuffed garnet d₅₀ grain size is between 0.1 and 10.

In some examples, including any of the foregoing, the multiphase thinfilm solid-state electrolyte has a fracture strength of 50 MPa-1000 MPaas measured a ring-on-ring flexural strength test.

In some examples, including any of the foregoing, the multiphase thinfilm solid-state electrolyte has a fracture strength of 50 MPa-2000 MPaas measured a ring-on-ring flexural strength test.

In some examples, including any of the foregoing, the multiphase thinfilm solid-state electrolyte has a fracture strength of 50 MPa-1200 MPaas measured a ring-on-ring flexural strength test.

In some examples, including any of the foregoing, the multiphase thinfilm solid-state electrolyte has a fracture strength of 200 MPa-800 MPaas measured a ring-on-ring flexural strength test.

In some examples, including any of the foregoing, the multiphase thinfilm solid-state electrolyte has a fracture strength of at least 50 MPaas measured by a ring-on-ring flexural strength test.

In some examples, including any of the foregoing, the multiphase thinfilm solid-state electrolyte has a fracture strength of at least 25 MPaas measured by a ring-on-ring flexural strength test.

In some examples, including any of the foregoing, the thickness of thethin film solid-state electrolyte is between about 0.1 μm to about 200μm.

In some examples, including any of the foregoing, the thickness of thethin film solid-state electrolyte is between 10 nm and 100 μm.

In some examples, including any of the foregoing, the thin filmsolid-state electrolyte is a circular shaped disc having a diameter ofat least 10 mm.

In some examples, including any of the foregoing, the thin filmsolid-state electrolyte has an area of at least 25 cm².

In some examples, including any of the foregoing, the secondary phaseinclusion is a material selected from the group consisting of:

-   -   tetragonal phase garnet; La₂Zr₂O₇; La₂O₃; LaAlO₃;        La₂(Li_(0.5)Al_(0.5))O₄; LiLaO₂; LiZr₂O₃;    -   Li_(a)Zr_(b)O_(c), wherein 1≤a≤8, 1≤b≤2, and 1≤c≤7, and wherein        subscripts a, b, and c are selected so that Li_(a)Zr_(b)O_(c) is        charge neutral;    -   Li_(g)Al_(h)O_(i), wherein 1≤g≤5, 1≤h≤5, and 2≤i≤8, and wherein        subscripts g, h, i are selected so that Li_(g)Al_(h)O_(i) is        charge neutral;    -   La_(d)Ta_(e)O_(f), wherein 1≤d≤3, 1≤e≤7, and 4≤f≤19, and wherein        subscripts d, e, and f are selected so that La_(d)Ta_(e)O_(f) is        charge neutral;    -   Li_(r)Ta₅O_(t), wherein 1≤r≤2, 1≤s≤3, and 3≤t≤7, and wherein        subscripts r, s, and t are selected so that Li_(r)Ta_(s)O_(t) is        charge neutral;    -   La_(n)Nb_(p)O_(q), wherein 1≤n≤3, 1≤p≤7, and 4≤q≤19, and wherein        subscripts n, p, and q are selected so that La_(n)Nb_(p)O_(q) is        charge neutral;    -   Li_(u)Nb_(v)O_(x), wherein 1≤u≤3, 1≤p≤3, and 3≤x≤9, and wherein        subscripts u, v, and x are selected so that Li_(u)Nb_(v)O_(x) is        charge neutral; and combinations thereof.

In some examples, including any of the foregoing, the secondary phaseinclusions include at least two materials selected from the groupconsisting of:

-   -   tetragonal phase garnet; La₂Zr₂O₇; La₂O₃; LaAlO₃;        La₂(Li_(0.5)Al_(0.5))O₄; LiLaO₂; LiZr₂O₃;    -   Li_(a)Zr_(b)O_(c), wherein 1≤a≤8, 1≤b≤2, and 1≤c≤7, and wherein        subscripts a, b, and c are selected so that Li_(a)Zr_(b)O_(c) is        charge neutral;    -   Li_(g)Al_(h)O_(i), wherein 1≤g≤5, 1≤h≤5, and 2≤i≤8, and wherein        subscripts g, h, i are selected so that Li_(g)Al_(h)O_(i) is        charge neutral;    -   La_(d)Ta_(e)O_(f), wherein 1≤d≤3, 1≤e≤7, and 4≤f≤19, and wherein        subscripts d, e, and f are selected so that La_(d)Ta_(e)O_(f) is        charge neutral;    -   Li_(r)Ta_(s)O_(t), wherein 1≤r≤2, 1≤s≤3, and 3≤t≤7, and wherein        subscripts r, s, and t are selected so that Li_(r)Ta_(s)O_(t) is        charge neutral;    -   La_(n)Nb_(p)O_(q), wherein 1≤n≤3, 1≤p≤7, and 4≤q≤19, and wherein        subscripts n, p, and q are selected so that La_(n)Nb_(p)O_(q) is        charge neutral; and    -   Li_(u)Nb_(v)O_(x), wherein 1≤u≤3, 1≤p≤3, and 3≤x≤9, and wherein        subscripts u, v, and x are selected so that Li_(u)Nb_(v)O_(x) is        charge neutral.

In some examples, including any of the foregoing, the secondary phaseinclusions include at least three materials selected from the groupconsisting of:

-   -   tetragonal phase garnet; La₂Zr₂O₇; La₂O₃; LaAlO₃;        La₂(Li_(0.5)Al_(0.5))O₄; LiLaO₂; LiZr₂O₃;    -   Li_(a)Zr_(b)O_(c), wherein 1≤a≤8, 1≤b≤2, and 1≤c≤7, and wherein        subscripts a, b, and c are selected so that Li_(a)Zr_(b)O_(c) is        charge neutral;    -   Li_(g)Al_(h)O_(i), wherein 1≤g≤5, 1≤h≤5, and 2≤i≤8, and wherein        subscripts g, h, i are selected so that Li_(g)Al_(h)O_(i) is        charge neutral;    -   La_(d)Ta_(e)O_(f), wherein 1≤d≤3, 1≤e≤7, and 4≤f≤19, and wherein        subscripts d, e, and f are selected so that La_(d)Ta_(e)O_(f) is        charge neutral;    -   Li_(r)Ta_(s)O_(t), wherein 1≤r≤2, 1≤s≤3, and 3≤t≤7, and wherein        subscripts r, s, and t are selected so that Li_(r)Ta_(s)O_(t) is        charge neutral;    -   La_(n)Nb_(p)O_(q), wherein 1≤n≤3, 1≤p≤7, and 4≤q≤19, and wherein        subscripts n, p, and q are selected so that La_(n)Nb_(p)O_(q) is        charge neutral; and    -   Li_(u)Nb_(v)O_(x), wherein 1≤u≤3, 1≤p≤3, and 3≤x≤9, and wherein        subscripts u, v, and x are selected so that Li_(u)Nb_(v)O_(x) is        charge neutral.

In some examples, including any of the foregoing, the secondary phaseinclusions include at least four materials selected from the groupconsisting of:

-   -   tetragonal phase garnet; La₂Zr₂O₇; La₂O₃; LaAlO₃;        La₂(Li_(0.5)Al_(0.5))O₄; LiLaO₂; LiZr₂O₃;    -   Li_(a)Zr_(b)O_(c), wherein 1≤a≤8, 1≤b≤2, and 1≤c≤7, and wherein        subscripts a, b, and c are selected so that Li_(a)Zr_(b)O_(c) is        charge neutral;    -   Li_(g)Al_(h)O_(i), wherein 1≤g≤5, 1≤h≤5, and 2≤i≤8, and wherein        subscripts g, h, i are selected so that Li_(g)Al_(h)O_(i) is        charge neutral;    -   La_(d)Ta_(e)O_(f), wherein 1≤d≤3, 1≤e≤7, and 4≤f≤19, and wherein        subscripts d, e, and f are selected so that La_(d)Ta_(e)O_(f) is        charge neutral;    -   Li_(r)Ta_(s)O_(t), wherein 1≤r≤2, 1≤s≤3, and 3≤t≤7, and wherein        subscripts r, s, and t are selected so that Li_(r)Ta_(s)O_(t) is        charge neutral;    -   La_(n)Nb_(p)O_(q), wherein 1≤n≤3, 1≤p≤7, and 4≤q≤19, and wherein        subscripts n, p, and q are selected so that La_(n)Nb_(p)O_(q) is        charge neutral; and    -   Li_(u)Nb_(v)O_(x), wherein 1≤u≤3, 1≤p≤3, and 3≤x≤9, and wherein        subscripts u, v, and x are selected so that Li_(u)Nb_(v)O_(x) is        charge neutral.

In some examples, including any of the foregoing, the total amount ofsecondary phase inclusion is 0.1, 0.2, 0.3, 0.4, 0.5, 0.6, 0.7, 0.8,0.9, 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19,20, 21, 22, 23, 24, 25, 26, 27, 28, 29, or 30 vol %.

In some examples, including any of the foregoing, wherein the secondaryphase inclusion comprises La₂Zr₂O₇; LiAlO₂; LaAlO₃; tetragonal garnet;and Li₂ZrO₃.

In some examples, including any of the foregoing, the secondary phaseinclusions include La₂Zr₂O₇; tetragonal garnet; Li_(a)Zr_(b)O_(c),wherein 1≤a≤8, 1≤b≤2, and 1≤c≤7, and wherein subscripts a, b, and c areselected so that Li_(a)Zr_(b)O_(c) is charge neutral; La_(d)Ta_(e)O_(f),wherein 1≤d≤3, 1≤e≤7, and 4≤f≤19, and wherein subscripts d, e, and f areselected so that La_(d)Ta_(e)O_(f) is charge neutral; andLi_(r)Ta_(s)O_(t), wherein 1≤r≤2, 1≤s≤3, and 3≤t≤7, and whereinsubscripts r, s, and t are selected so that Li_(r)Ta_(s)O_(t) is chargeneutral.

In some examples, including any of the foregoing, the secondary phaseinclusion includes La₂Zr₂O₇; tetragonal garnet; Li_(a)Zr_(b)O_(c),wherein 1≤a≤8, 1≤b≤2, and 1≤c≤7, and wherein subscripts a, b, and c areselected so that Li_(a)Zr_(b)O_(c) is charge neutral; La_(n)Nb_(p)O_(q),wherein 1≤n≤3, 1≤p≤7, and 4≤q≤19, and wherein subscripts n, p, and q areselected so that La_(n)Nb_(p)O_(q) is charge neutral; andLi_(u)Nb_(v)O_(x), wherein 1≤u≤3, 1≤p≤3, and 3≤x≤9, and whereinsubscripts u, v, and x are selected so that Li_(u)Nb_(v)O_(x) is chargeneutral.

In some examples, including any of the foregoing, the secondary phaseinclusion in the multiphase thin film solid-state electrolyte includesLiAlO₂ present in the multiphase thin film solid-state electrolyte atabout 0.1-25 vol %, Li₂ZrO₃ present in the multiphase thin filmsolid-state electrolyte at about 0.1-15 vol % and LaAlO₃ present in themultiphase thin film solid-state electrolyte at about 0.1-15 vol %, asmeasured by quantitative XRD.

In some examples, including any of the foregoing, the secondary phaseinclusion in the multiphase thin film solid-state electrolyte includesLiAlO₂ present in the multiphase thin film solid-state electrolyte atabout 3-8 vol %, Li₂ZrO₃ present in the multiphase thin film solid-stateelectrolyte at about 1-10 vol % and LaAlO₃ present in the multiphasethin film solid-state electrolyte at about 1-8 vol %, as measured byquantitative XRD.

In some examples, including any of the foregoing, the density of themultiphase thin film solid-state electrolyte is 4.6-5.2 g/cm³ asmeasured by the Archimedes method.

In some examples, including any of the foregoing, the density of themultiphase thin film solid-state electrolyte is about 4.9 g/cm³ asmeasured by the Archimedes method.

In some examples, including any of the foregoing, pyrochlore is presentin the multiphase thin film solid-state electrolyte at less than 20 vol% as measured by quantitative XRD after the multiphase film is heated at850° C. for 2 hours.

In some examples, including any of the foregoing, the bulk conductivityis greater than 1-5×10⁻⁴ S/cm at 20° C.

In some examples, including any of the foregoing, the bulk conductivityis greater than 2×10⁴ S/cm at 20° C.

In some examples, including any of the foregoing, the interfacial areaspecific resistance (ASR) of the multiphase thin film solid-stateelectrolyte with lithium metal is 1-200 Ω cm² at −15° C.

In some examples, including any of the foregoing, the interfacial ASR ofthe multiphase thin film solid-state electrolyte with lithium metal is2000 Ωcm² at −15° C.

In some examples, including any of the foregoing, the interfacial ASR ofthe multiphase thin film solid-state electrolyte with lithium metal isless than 2000 Ωcm² at −15° C.

In some examples, including any of the foregoing, the specific ASR ofthe multiphase thin film solid-state electrolyte with lithium metal isless than 10 Ωcm² at −15° C.

In some examples, including any of the foregoing, the multiphase thinfilm solid-state electrolyte has a total porosity of less than 5 vol %as determined by SEM.

In some examples, including any of the foregoing, the 90th percentilelargest pore has no lateral extent larger than 5 μm as measured bycross-section electron microscopy.

In some examples, including any of the foregoing, the multiphase film issintered and has a thickness of about 10 nm. In some other examples, themultiphase film has a thickness of about 11 nm. In certain examples, themultiphase film has a thickness of about 12 nm. In certain otherexamples, the multiphase film has a thickness of about 13 nm. In someother examples, the multiphase film has a thickness of about 14 nm. Insome examples, the multiphase film has a thickness of about 15 nm. Insome of these examples, the multiphase film has a thickness of about 16nm. In some examples, the multiphase film has a thickness of about 17nm. In some other examples, the multiphase film has a thickness of about18 nm. In certain examples, the multiphase film has a thickness of about19 nm. In some of these examples, the multiphase film has a thickness ofabout 20 nm. In some other examples, the multiphase film has a thicknessof about 21 nm. In certain examples, the multiphase film has a thicknessof about 22 nm. In certain other examples, the multiphase film has athickness of about 23 nm. In some other examples, the multiphase filmhas a thickness of about 24 nm. In some examples, the sintered film hasa thickness of about 25 nm. In some examples, the multiphase film has athickness of about 26 nm. In some of these examples, the multiphase filmhas a thickness of about 27 nm. In some examples, the multiphase filmhas a thickness of about 28 nm. In some other examples, the multiphasefilm has a thickness of about 29 nm. In certain examples, the multiphasefilm has a thickness of about 30 nm. In some of these examples, themultiphase film has a thickness of about 31 nm. In some other examples,the multiphase film has a thickness of about 32 nm. In certain examples,the multiphase film has a thickness of about 33 nm. In certain otherexamples, the multiphase film has a thickness of about 34 nm. In someother examples, the multiphase film has a thickness of about 35 nm. Insome examples, the multiphase film has a thickness of about 36 nm. Insome of these examples, the multiphase film has a thickness of about 37nm. In some examples, the multiphase film has a thickness of about 38nm. In some other examples, the multiphase film has a thickness of about39 nm. In certain examples, the multiphase film has a thickness of about40 nm. In some of these examples, the multiphase film has a thickness ofabout 41 nm. In some other examples, the multiphase film has a thicknessof about 42 nm. In certain examples, the multiphase film has a thicknessof about 43 nm. In certain other examples, the multiphase film has athickness of about 44 nm. In some other examples, the multiphase filmhas a thickness of about 45 nm. In some examples, the multiphase filmhas a thickness of about 46 nm. In some of these examples, themultiphase film has a thickness of about 47 nm. In some examples, themultiphase film has a thickness of about 48 nm. In some other examples,the multiphase film has a thickness of about 49 nm. In certain examples,the multiphase film has a thickness of about 50 nm. In some of theseexamples, the multiphase film has a thickness of about 51 nm. In someother examples, the multiphase film has a thickness of about 52 nm. Incertain examples, the multiphase film has a thickness of about 53 nm. Incertain other examples, the multiphase film has a thickness of about 54nm. In some other examples, the multiphase film has a thickness of about55 nm. In some examples, the multiphase film has a thickness of about 56nm. In some of these examples, the multiphase film has a thickness ofabout 57 nm. In some examples, the multiphase film has a thickness ofabout 58 nm. In some other examples, the multiphase film has a thicknessof about 59 nm. In certain examples, the multiphase film has a thicknessof about 60 nm.

In some of these examples, the multiphase film has a thickness of about1 μm. In some of these examples, the multiphase film has a thickness ofabout 2 μm. In some of these examples, the multiphase film has athickness of about 3 μm. In some of these examples, the multiphase filmhas a thickness of about 4 μm. In some of these examples, the multiphasefilm has a thickness of about 52 nm. In some of these examples, themultiphase film has a thickness of about 6 μm. In some of theseexamples, the multiphase film has a thickness of about 7 μm. In some ofthese examples, the multiphase film has a thickness of about 55 nm. Insome of these examples, the multiphase film has a thickness of about 9μm. In some of these examples, the multiphase film has a thickness ofabout 10 μm. In some of these examples, the multiphase film has athickness of about 11 μm. In some other examples, the multiphase filmhas a thickness of about 12 μm. In certain examples, the multiphase filmhas a thickness of about 13 μm. In certain other examples, themultiphase film has a thickness of about 14 μm. In some other examples,the multiphase film has a thickness of about 15 μm. In some examples,the multiphase film has a thickness of about 16 μm. In some of theseexamples, the multiphase film has a thickness of about 17 μm. In someexamples, the multiphase film has a thickness of about 18 μm. In someother examples, the multiphase film has a thickness of about 19 μm. Incertain examples, the multiphase film has a thickness of about 20 μm. Insome of these examples, the multiphase film has a thickness of about 21μm. In some other examples, the multiphase film has a thickness of about22 μm. In certain examples, the multiphase film has a thickness of about23 μm. In certain other examples, the multiphase film has a thickness ofabout 24 μm. In some other examples, the multiphase film has a thicknessof about 25 μm. In some examples, the multiphase film has a thickness ofabout 26 μm. In some of these examples, the multiphase film has athickness of about 27 μm. In some examples, the multiphase film has athickness of about 28 μm. In some other examples, the multiphase filmhas a thickness of about 29 μm. In certain examples, the multiphase filmhas a thickness of about 30 μm. In some of these examples, themultiphase film has a thickness of about 31 μm. In some other examples,the multiphase film has a thickness of about 32 μm. In certain examples,the multiphase film has a thickness of about 33 μm. In certain otherexamples, the multiphase film has a thickness of about 34 μm. In someother examples, the multiphase film has a thickness of about 35 μm. Insome examples, the multiphase film has a thickness of about 36 μm. Insome of these examples, the multiphase film has a thickness of about 37μm. In some examples, the multiphase film has a thickness of about 38μm. In some other examples, the multiphase film has a thickness of about39 μm. In certain examples, the multiphase film has a thickness of about40 μm. In some of these examples, the multiphase film has a thickness ofabout 41 μm. In some other examples, the multiphase film has a thicknessof about 42 μm. In certain examples, the multiphase film has a thicknessof about 43 μm. In certain other examples, the multiphase film has athickness of about 44 μm. In some other examples, the multiphase filmhas a thickness of about 45 μm. In some examples, the multiphase filmhas a thickness of about 46 μm. In some of these examples, themultiphase film has a thickness of about 47 μm. In some examples, themultiphase film has a thickness of about 48 μm. In some other examples,the multiphase film has a thickness of about 49 μm. In certain examples,the multiphase film has a thickness of about 50 μm. In some of theseexamples, the multiphase film has a thickness of about 51 μm. In someother examples, the multiphase film has a thickness of about 52 μm. Incertain examples, the multiphase film has a thickness of about 53 μm. Incertain other examples, the multiphase film has a thickness of about 54μm. In some other examples, the multiphase film has a thickness of about55 μm. In some examples, the multiphase film has a thickness of about 56μm. In some of these examples, the multiphase film has a thickness ofabout 57 μm. In some examples, the multiphase film has a thickness ofabout 58 μm. In some other examples, the multiphase film has a thicknessof about 59 μm. In certain examples, the multiphase film has a thicknessof about 60 μm.

In some of these examples, the multiphase film has a thickness of about61 μm. In some other examples, the multiphase film has a thickness ofabout 62 μm. In certain examples, the multiphase film has a thickness ofabout 63 μm. In certain other examples, the multiphase film has athickness of about 64 μm. In some other examples, the multiphase filmhas a thickness of about 65 μm. In some examples, the multiphase filmhas a thickness of about 66 μm. In some of these examples, themultiphase film has a thickness of about 67 μm. In some examples, themultiphase film has a thickness of about 68 μm. In some other examples,the multiphase film has a thickness of about 69 μm. In certain examples,the multiphase film has a thickness of about 70 μm. In some of theseexamples, the multiphase film has a thickness of about 71 μm. In someother examples, the multiphase film has a thickness of about 72 μm. Incertain examples, the multiphase film has a thickness of about 73 μm. Incertain other examples, the multiphase film has a thickness of about 74μm. In some other examples, the multiphase film has a thickness of about75 μm. In some examples, the multiphase film has a thickness of about 76μm. In some of these examples, the multiphase film has a thickness ofabout 77 μm. In some examples, the multiphase film has a thickness ofabout 78 μm. In some other examples, the multiphase film has a thicknessof about 79 μm. In certain examples, the multiphase film has a thicknessof about 80 μm. In some of these examples, the multiphase film has athickness of about 81 μm. In some other examples, the multiphase filmhas a thickness of about 82 μm. In certain examples, the multiphase filmhas a thickness of about 83 μm. In certain other examples, themultiphase film has a thickness of about 84 μm. In some other examples,the multiphase film has a thickness of about 85 μm. In some examples,the multiphase film has a thickness of about 86 μm. In some of theseexamples, the multiphase film has a thickness of about 87 μm. In someexamples, the multiphase film has a thickness of about 88 μm. In someother examples, the multiphase film has a thickness of about 89 μm. Incertain examples, the multiphase film has a thickness of about 90 μm. Insome of these examples, the multiphase film has a thickness of about 91μm. In some other examples, the multiphase film has a thickness of about92 μm. In certain examples, the multiphase film has a thickness of about93 μm. In certain other examples, the multiphase film has a thickness ofabout 94 μm. In some other examples, the multiphase film has a thicknessof about 95 μm. In some examples, the multiphase film has a thickness ofabout 96 μm. In some of these examples, the multiphase film has athickness of about 97 μm. In some examples, the multiphase film has athickness of about 98 μm. In some other examples, the multiphase filmhas a thickness of about 99 μm. In certain examples, the multiphase filmhas a thickness of about 100 μm.

In some of these examples, the multiphase film has a thickness of about101 μm. In some other examples, the multiphase film has a thickness ofabout 102 μm. In certain examples, the multiphase film has a thicknessof about 103 μm. In certain other examples, the multiphase film has athickness of about 104 μm. In some other examples, the multiphase filmhas a thickness of about 105 μm. In some examples, the multiphase filmhas a thickness of about 106 μm. In some of these examples, themultiphase film has a thickness of about 107 μm. In some examples, themultiphase film has a thickness of about 108 μm. In some other examples,the multiphase film has a thickness of about 109 μm. In certainexamples, the multiphase film has a thickness of about 110 μm. In someof these examples, the multiphase film has a thickness of about 111 μm.In some other examples, the multiphase film has a thickness of about 112μm. In certain examples, the multiphase film has a thickness of about113 μm. In certain other examples, the multiphase film has a thicknessof about 114 μm. In some other examples, the multiphase film has athickness of about 115 μm. In some examples, the multiphase film has athickness of about 116 μm. In some of these examples, the multiphasefilm has a thickness of about 117 μm. In some examples, the multiphasefilm has a thickness of about 118 μm. In some other examples, themultiphase film has a thickness of about 119 μm. In certain examples,the multiphase film has a thickness of about 120 μm. In some of theseexamples, the multiphase film has a thickness of about 121 μm. In someother examples, the multiphase film has a thickness of about 122 μm. Incertain examples, the multiphase film has a thickness of about 123 μm.In certain other examples, the multiphase film has a thickness of about124 μm. In some other examples, the multiphase film has a thickness ofabout 125 μm. In some examples, the multiphase film has a thickness ofabout 126 μm. In some of these examples, the multiphase film has athickness of about 127 μm. In some examples, the multiphase film has athickness of about 128 μm. In some other examples, the multiphase filmhas a thickness of about 129 μm. In certain examples, the multiphasefilm has a thickness of about 130 μm. In some of these examples, themultiphase film has a thickness of about 131 μm. In some other examples,the multiphase film has a thickness of about 132 μm. In certainexamples, the multiphase film has a thickness of about 133 μm. Incertain other examples, the multiphase film has a thickness of about 134μm. In some other examples, the multiphase film has a thickness of about135 μm. In some examples, the multiphase film has a thickness of about136 μm. In some of these examples, the multiphase film has a thicknessof about 137 μm. In some examples, the multiphase film has a thicknessof about 138 μm. In some other examples, the multiphase film has athickness of about 139 μm. In certain examples, the multiphase film hasa thickness of about 140 μm.

In some of these examples, the multiphase film has a thickness of about141 μm. In some other examples, the multiphase film has a thickness ofabout 142 μm. In certain examples, the multiphase film has a thicknessof about 143 μm. In certain other examples, the multiphase film has athickness of about 144 μm. In some other examples, the multiphase filmhas a thickness of about 145 μm. In some examples, the multiphase filmhas a thickness of about 146 μm. In some of these examples, themultiphase film has a thickness of about 147 μm. In some examples, themultiphase film has a thickness of about 148 μm. In some other examples,the multiphase film has a thickness of about 149 μm. In certainexamples, the multiphase film has a thickness of about 150 μm.

In some examples, provided herein is a multiphase film having grainswith a d₅₀ diameter less than 10 nm. In certain examples, the multiphasefilm has grains having a d₅₀ diameter less than 900 nm. In otherexamples, the grains having a d₅₀ diameter less than 800 nm. In someexamples, the grains have a d₅₀ diameter less than 700 nm. In certainexamples, the multiphase film has grains having a d₅₀ diameter less than600 nm. In other examples, the multiphase film has grains having a d₅₀diameter less than 500 nm. In some examples, the multiphase film hasgrains having a d₅₀ diameter less than 400 nm. In other examples, themultiphase film has grains having a d₅₀ diameter less than 300 nm. Incertain examples, the multiphase film has grains having a d₅₀ diameterless than 200 nm. In other examples, the multiphase film has grainshaving a d₅₀ diameter less than 100 nm.

In some examples, provided herein is a multiphase film having grainswith a d₅₀ diameter less than 10 μm. In certain examples, the multiphasefilm has grains having a d₅₀ diameter less than 9 μm. In other examples,the grains having a d₅₀ diameter less than 8 μm. In some examples, thegrains have a d₅₀ diameter less than 7 μm. In certain examples, themultiphase film has grains having a d₅₀ diameter less than 6 μm. Inother examples, the multiphase film has grains having a d₅₀ diameterless than 5 μm. In some examples, the multiphase film has grains havinga d₅₀ diameter less than 4 μm. In other examples, the multiphase filmhas grains having a d₅₀ diameter less than 3 μm. In certain examples,the multiphase film has grains having a d₅₀ diameter less than 2 μm. Inother examples, the multiphase film has grains having a d₅₀ diameterless than 1 μm.

In some examples, the grains in the multiphase films set forth hereinhave d₅₀ diameters of between 10 nm and 10 μm. In some examples, thegrains in the multiphase films set forth herein have d₅₀ diameters ofbetween 100 nm and 10 μm.

In some examples, the disclosure sets forth herein sets forth afree-standing thin multiphase film garnet-based electrolyte prepared bythe process set forth herein.

In some embodiments, the thickness of the free-standing film is lessthan 50 μm. In certain embodiments, the thickness of the film is lessthan 40 μm. In some embodiments, the thickness of the film is less than30 μm. In some other embodiments, the thickness of the film is less than20 μm. In other embodiments, the thickness of the film is less than 10μm. In yet other embodiments, the thickness of the film is less than 5μm.

In some embodiments, the thickness of the film is less than 45 μm. Incertain embodiments, the thickness of the film is less than 35 μm. Insome embodiments, the thickness of the film is less than 25 μm. In someother embodiments, the thickness of the film is less than 15 μm. Inother embodiments, the thickness of the film is less than 5 μm. In yetother embodiments, the thickness of the film is less than 1 μm.

In some embodiments, the thickness of the film is about 1 μm to about 50μm. In certain embodiments, the thickness of the film about 10 μm toabout 50 μm. In some embodiments, the thickness of the film is about 20μm to about 50 μm. In some other embodiments, the thickness of the filmis about 30 μm to about 50 μm. In other embodiments, the thickness ofthe film is about 40 μm to about 50 μm.

In some embodiments, the thickness of the film is about 1 μm to about 40μm. In certain embodiments, the thickness of the film about 10 μm toabout 40 μm. In some embodiments, the thickness of the film is about 20μm to about 40 μm. In some other embodiments, the thickness of the filmis about 30 μm to about 40 μm. In other embodiments, the thickness ofthe film is about 20 μm to about 30 μm.

In some examples, set forth herein is a thin and free standing sinteredgarnet film, wherein the film thickness is less than 50 μm and greaterthan 10 nm, and wherein the film is substantially flat; and wherein thegarnet is optionally bonded to a current collector (CC) film including ametal or metal powder on at least one side of the film. A free standingfilm can be bonded to a current collector or to other components, butthe free-standing film is only a free-standing film when it is notbonded to a current collector or to other components.

In some examples, the thin and free standing sintered garnet film hasthickness is less than 20 μm or less than 10 μm. In some examples, thethin and free standing sintered garnet film has a surface roughness ofless than 5 μm. In some examples, the thin and free standing sinteredgarnet film has a surface roughness of less than 4 μm. In some examples,the thin and free standing sintered garnet film has a surface roughnessof less than 2 μm. In some examples, the thin and free standing sinteredgarnet film has a surface roughness of less than 1 μm. In certainexamples, the garnet has a median grain size of between 0.1 μm to 10 μm.In certain examples, the garnet has a median grain size of between 2.0μm to 5.0 μm.

In some of the multiphase films set forth herein, the multiphase film isbound to a substrate that is selected from a polymer, a glass, or ametal. In some of these examples, the substrate adhered to or bound tothe multiphase film is a current collector (CC). In some of theseexamples, the CC includes a metal selected from the group consisting ofNickel (Ni), Copper (Cu), combinations thereof, and alloys thereof. Insome of these examples, the multiphase film is bonded to a metal currentcollector (CC) on one side of the multiphase film. In some otherexamples, the multiphase film is bonded to a metal current collector(CC) on two sides of the multiphase film. In yet other examples, the CCis positioned between, and in contact with, two multiphase films.

In some examples, set forth herein is a trilayer including a metal foilor metal powder positioned between, and in contact with, two distinctlithium-stuffed garnet multiphase thin films. In some examples, themiddle layer is metal foil. In some other examples, the middle layer isa metal powder. In some examples, the metal is Ni. In other examples,the metal is Al. In still other examples, the metal is Fe. In someexamples, the metal is steel or stainless steel. In some examples, themetal is an alloy or combination of Ni, Cu, Al, or Fe. In some examples,the trilayer has a structure. In some examples, the trilayer has astructure.

In some examples, set forth herein is a bilayer including a metal foilor metal powder positioned in contact with a lithium-stuffed garnet thinmultiphase film. In some examples, one layer of the bilayer is a metalfoil. In other examples, one layer of the bilayer is a metal powder. Insome examples, the metal is Ni. In other examples, the metal is Al. Inother examples, the metal is Cu. In still other examples, the metal isFe. In some examples, the metal is steel or stainless steel. In someexamples, the metal is an alloy or combination of Ni, Cu, Al, or Fe. Insome examples, the bilayer has a structure. In some examples, thebilayer has the structure shown between the sintering plates.

In some examples, set forth herein are multiple stacks or combinationsof the aforementioned layers, bilayers, and, or, trilayers. In someexamples, two or more bilayers are stacked in serial combination. Insome other examples, two or more trilayers are stacked in serialcombination. In some examples, interposed between these serialcombination stacks are cathode active materials, anode active materials,and, or, current collectors.

In some examples, the thin multiphase films set forth herein are lessthan 50 μm in thickness. In some other examples, the thin multiphasefilms set forth herein are less than 45 μm in thickness. In certainexamples, the thin multiphase films set forth herein are less than 40 μmin thickness. In still other examples, the thin multiphase films setforth herein are less than 35 μm in thickness. In some examples, thethin multiphase films set forth herein are less than 30 μm in thickness.In some other examples, the thin multiphase films set forth herein areless than 25 μm in thickness. In certain examples, the thin multiphasefilms set forth herein are less than 20 μm in thickness. In still otherexamples, the thin multiphase films set forth herein are less than 15 μmin thickness. In some examples, the thin multiphase films set forthherein are less than 10 μm in thickness. In some other examples, thethin multiphase films set forth herein are less than 5 μm in thickness.In certain examples, the thin multiphase films set forth herein are lessthan 0.5 μm in thickness. In still other examples, the thin multiphasefilms set forth herein are less than 0.1 μm in thickness.

In some examples, provided herein is a composition formulated as a thinfilm having a film thickness of about 100 nm to about 100 μm. In certainexamples, the thickness is about 50 μm. In other examples, the thicknessis about 40 μm. In some examples, the thickness is about 30 μm. In otherexamples, the thickness is about 20 μm. In certain examples, thethickness is about 10 μm. In other examples, the thickness is about 5μm. In some examples, the thickness is about 1 μm. In yet otherexamples, the thickness is about 0.5 μm.

In some of these examples, the multiphase films are about 1 mm in atleast one lateral dimension. In some other of these examples, themultiphase films are about 5 mm in at least one lateral dimension. Inyet other examples, the multiphase films are about 10 mm in at least onelateral dimension. In still other examples, the multiphase films areabout 15 mm in at least one lateral dimension. In certain examples, themultiphase films are about 25 mm in at least one lateral dimension. Inother examples, the multiphase films are about 30 mm in at least onelateral dimension. In some examples, the multiphase films are about 35mm in at least one lateral dimension. In some other examples, themultiphase films are about 40 mm in at least one lateral dimension. Instill other examples, the multiphase films are about 45 mm in at leastone lateral dimension. In certain examples, the multiphase films areabout 50 mm in at least one lateral dimension. In other examples, themultiphase films are about 30 mm in at least one lateral dimension. Insome examples, the multiphase films are about 55 mm in at least onelateral dimension. In some other examples, the multiphase films areabout 60 mm in at least one lateral dimension. In yet other examples,the multiphase films are about 65 mm in at least one lateral dimension.In still other examples, the multiphase films are about 70 mm in atleast one lateral dimension. In certain examples, the multiphase filmsare about 75 mm in at least one lateral dimension. In other examples,the multiphase films are about 80 mm in at least one lateral dimension.In some examples, the multiphase films are about 85 mm in at least onelateral dimension. In some other examples, the multiphase films areabout 90 mm in at least one lateral dimension. In still other examples,the multiphase films are about 95 mm in at least one lateral dimension.In certain examples, the multiphase films are about 100 mm in at leastone lateral dimension. In other examples, the multiphase films are about30 mm in at least one lateral dimension.

In some examples, the multiphase films are about 1 cm in at least onelateral dimension. In some other examples, the multiphase films areabout 2 cm in at least one lateral dimension. In other examples, themultiphase films are about 3 cm in at least one lateral dimension. Inyet other examples, the multiphase films are about 4 cm in at least onelateral dimension. In some examples, the multiphase films are about 5 cmin at least one lateral dimension. In other examples, the multiphasefilms are about 6 cm in at least one lateral dimension. In yet otherexamples, the multiphase films are about 7 cm in at least one lateraldimension. In some other examples, the multiphase films are about 8 cmin at least one lateral dimension. In yet other examples, the multiphasefilms are about 9 cm in at least one lateral dimension. In still otherexamples, the multiphase films are about 10 cm in at least one lateraldimension. In some examples, the multiphase films are about 11 cm in atleast one lateral dimension. In some other examples, the multiphasefilms are about 12 cm in at least one lateral dimension. In otherexamples, the multiphase films are about 13 cm in at least one lateraldimension. In yet other examples, the multiphase films are about 14 cmin at least one lateral dimension. In some examples, the multiphasefilms are about 15 cm in at least one lateral dimension. In otherexamples, the multiphase films are about 16 cm in at least one lateraldimension. In yet other examples, the multiphase films are about 17 cmin at least one lateral dimension. In some other examples, themultiphase films are about 18 cm in at least one lateral dimension. Inyet other examples, the multiphase films are about 19 cm in at least onelateral dimension. In still other examples, the multiphase films areabout 20 cm in at least one lateral dimension. In some examples, themultiphase films are about 21 cm in at least one lateral dimension. Insome other examples, the multiphase films are about 22 cm in at leastone lateral dimension. In other examples, the multiphase films are about23 cm in at least one lateral dimension. In yet other examples, themultiphase films are about 24 cm in at least one lateral dimension. Insome examples, the multiphase films are about 25 cm in at least onelateral dimension. In other examples, the multiphase films are about 26cm in at least one lateral dimension. In yet other examples, themultiphase films are about 27 cm in at least one lateral dimension. Insome other examples, the multiphase films are about 28 cm in at leastone lateral dimension. In yet other examples, the multiphase films areabout 29 cm in at least one lateral dimension. In still other examples,the multiphase films are about 30 cm in at least one lateral dimension.In some examples, the multiphase films are about 31 cm in at least onelateral dimension. In some other examples, the multiphase films areabout 32 cm in at least one lateral dimension. In other examples, themultiphase films are about 33 cm in at least one lateral dimension. Inyet other examples, the multiphase films are about 34 cm in at least onelateral dimension. In some examples, the multiphase films are about 35cm in at least one lateral dimension. In other examples, the multiphasefilms are about 36 cm in at least one lateral dimension. In yet otherexamples, the multiphase films are about 37 cm in at least one lateraldimension. In some other examples, the multiphase films are about 38 cmin at least one lateral dimension. In yet other examples, the multiphasefilms are about 39 cm in at least one lateral dimension. In still otherexamples, the multiphase films are about 40 cm in at least one lateraldimension. In some examples, the multiphase films are about 41 cm in atleast one lateral dimension. In some other examples, the multiphasefilms are about 42 cm in at least one lateral dimension. In otherexamples, the multiphase films are about 43 cm in at least one lateraldimension. In yet other examples, the multiphase films are about 44 cmin at least one lateral dimension. In some examples, the multiphasefilms are about 45 cm in at least one lateral dimension. In otherexamples, the multiphase films are about 46 cm in at least one lateraldimension. In yet other examples, the multiphase films are about 47 cmin at least one lateral dimension. In some other examples, themultiphase films are about 48 cm in at least one lateral dimension. Inyet other examples, the multiphase films are about 49 cm in at least onelateral dimension. In still other examples, the multiphase films areabout 50 cm in at least one lateral dimension. In some examples, themultiphase films are about 51 cm in at least one lateral dimension. Insome other examples, the multiphase films are about 52 cm in at leastone lateral dimension. In other examples, the multiphase films are about53 cm in at least one lateral dimension. In yet other examples, themultiphase films are about 54 cm in at least one lateral dimension. Insome examples, the multiphase films are about 55 cm in at least onelateral dimension. In other examples, the multiphase films are about 56cm in at least one lateral dimension. In yet other examples, themultiphase films are about 57 cm in at least one lateral dimension. Insome other examples, the multiphase films are about 58 cm in at leastone lateral dimension. In yet other examples, the multiphase films areabout 59 cm in at least one lateral dimension. In still other examples,the multiphase films are about 60 cm in at least one lateral dimension.In some examples, the multiphase films are about 61 cm in at least onelateral dimension. In some other examples, the multiphase films areabout 62 cm in at least one lateral dimension. In other examples, themultiphase films are about 63 cm in at least one lateral dimension. Inyet other examples, the multiphase films are about 64 cm in at least onelateral dimension. In some examples, the multiphase films are about 65cm in at least one lateral dimension. In other examples, the multiphasefilms are about 66 cm in at least one lateral dimension. In yet otherexamples, the multiphase films are about 67 cm in at least one lateraldimension. In some other examples, the multiphase films are about 68 cmin at least one lateral dimension. In yet other examples, the multiphasefilms are about 69 cm in at least one lateral dimension. In still otherexamples, the multiphase films are about 70 cm in at least one lateraldimension. In some examples, the multiphase films are about 71 cm in atleast one lateral dimension. In some other examples, the multiphasefilms are about 72 cm in at least one lateral dimension. In otherexamples, the multiphase films are about 73 cm in at least one lateraldimension. In yet other examples, the multiphase films are about 74 cmin at least one lateral dimension. In some examples, the multiphasefilms are about 75 cm in at least one lateral dimension. In otherexamples, the multiphase films are about 76 cm in at least one lateraldimension. In yet other examples, the multiphase films are about 77 cmin at least one lateral dimension. In some other examples, themultiphase films are about 78 cm in at least one lateral dimension. Inyet other examples, the multiphase films are about 79 cm in at least onelateral dimension. In still other examples, the multiphase films areabout 80 cm in at least one lateral dimension. In some examples, themultiphase films are about 81 cm in at least one lateral dimension. Insome other examples, the multiphase films are about 82 cm in at leastone lateral dimension. In other examples, the multiphase films are about83 cm in at least one lateral dimension. In yet other examples, themultiphase films are about 84 cm in at least one lateral dimension. Insome examples, the multiphase films are about 85 cm in at least onelateral dimension. In other examples, the multiphase films are about 86cm in at least one lateral dimension. In yet other examples, themultiphase films are about 87 cm in at least one lateral dimension. Insome other examples, the multiphase films are about 88 cm in at leastone lateral dimension. In yet other examples, the multiphase films areabout 89 cm in at least one lateral dimension. In still other examples,the multiphase films are about 90 cm in at least one lateral dimension.In some examples, the multiphase films are about 91 cm in at least onelateral dimension. In some other examples, the multiphase films areabout 92 cm in at least one lateral dimension. In other examples, themultiphase films are about 93 cm in at least one lateral dimension. Inyet other examples, the multiphase films are about 94 cm in at least onelateral dimension. In some examples, the multiphase films are about 95cm in at least one lateral dimension. In other examples, the multiphasefilms are about 96 cm in at least one lateral dimension. In yet otherexamples, the multiphase films are about 97 cm in at least one lateraldimension. In some other examples, the multiphase films are about 98 cmin at least one lateral dimension. In yet other examples, the multiphasefilms are about 99 cm in at least one lateral dimension. In still otherexamples, the multiphase films are about 100 cm in at least one lateraldimension. In some examples, the multiphase films are about 101 cm in atleast one lateral dimension. In some other examples, the multiphasefilms are about 102 cm in at least one lateral dimension. In otherexamples, the multiphase films are about 103 cm in at least one lateraldimension. In yet other examples, the multiphase films are about 104 cmin at least one lateral dimension. In some examples, the multiphasefilms are about 105 cm in at least one lateral dimension. In otherexamples, the multiphase films are about 106 cm in at least one lateraldimension. In yet other examples, the multiphase films are about 107 cmin at least one lateral dimension. In some other examples, themultiphase films are about 108 cm in at least one lateral dimension. Inyet other examples, the multiphase films are about 109 cm in at leastone lateral dimension. In still other examples, the multiphase films areabout 110 cm in at least one lateral dimension. In some examples, themultiphase films are about 111 cm in at least one lateral dimension. Insome other examples, the multiphase films are about 112 cm in at leastone lateral dimension. In other examples, the multiphase films are about113 cm in at least one lateral dimension. In yet other examples, themultiphase films are about 114 cm in at least one lateral dimension. Insome examples, the multiphase films are about 115 cm in at least onelateral dimension. In other examples, the multiphase films are about 116cm in at least one lateral dimension. In yet other examples, themultiphase films are about 117 cm in at least one lateral dimension. Insome other examples, the multiphase films are about 118 cm in at leastone lateral dimension. In yet other examples, the multiphase films areabout 119 cm in at least one lateral dimension. In still other examples,the multiphase films are about 120 cm in at least one lateral dimension.

In some examples, the garnet-based multiphase films are prepared as amonolith useful for a lithium secondary battery cell. In some of thesecells, the form factor for the garnet-based film is a film with a topsurface area of about 10 cm². In certain cells, the form factor for thegarnet-based film with a top surface area of about 100 cm².

In some examples, the multiphase films set forth herein have a Young'sModulus of about 130-150 GPa. In some other examples, the multiphasefilms set forth herein have a Vicker's hardness of about 5-7 GPa.

In some examples, the multiphase films set forth herein have a porosityless than 20%. In other examples, the multiphase films set forth hereinhave a porosity less than 10%. In yet other examples, the multiphasefilms set forth herein have a porosity less than 5%. In still otherexamples, the multiphase films set forth herein have a porosity lessthan 4%. In still other examples, the multiphase films set forth hereinhave a porosity less than 3%. In still other examples, the multiphasefilms set forth herein have a porosity less than 2%. In still otherexamples, the multiphase films set forth herein have a porosity lessthan 1%. Percent (%) porosity is by volume.

In some examples, including any of the foregoing, provided herein is anelectrochemical cell having an electrolyte that is a multiphase filmdescribed herein.

III. Powders

In some examples, set forth herein are powders. In some examples, thepowders include mixtures that include chemical precursors tolithium-stuffed garnet. In some examples, the powders include thecalcined products of mixtures, which include chemical precursors tolithium-stuffed garnet. In some examples, the powders include thesintered products of the calcined products of mixtures which includechemical precursors to lithium-stuffed garnet

In some examples, the powders herein include a primary cubic phaselithium-stuffed garnet characterized by the chemical formulaLi_(A)La_(B)Al_(c)M″_(D)Zr_(E)O_(F), wherein 5<A<8, 1.5<B<4, 0.1<C<2,0≤D<2; 1<E<3, 10<F<13, and M″ is selected from the group consisting ofMo, W, Nb, Y, Ta, Ga, Sb, Ca, Ba, Sr, Ce, Hf, and Rb; a secondary phaseinclusion in the primary cubic phase lithium-stuffed garnet; wherein:the primary cubic phase lithium-stuffed garnet is present at about70-99.9 vol % with respect to the volume of the composition; and thesecondary phase inclusion is present at about 30-0.1 vol % with respectto the volume of the composition.

In some examples, including any of the foregoing, the amount of primarycubic phase lithium-stuffed garnet and the amount of secondary phaseinclusion sum to the total amount of material in the composition.

In some examples, including any of the foregoing, the secondary phaseinclusion d₅₀ grain size is less than 10 μm.

In some examples, including any of the foregoing, the secondary phaseinclusion d₅₀ grain size is from about 1 μm to about 10 μm.

In some examples, including any of the foregoing, the primary cubicphase lithium-stuffed garnet d₅₀ grain size is smaller than thesecondary phase inclusion d₅₀ grain size. In some examples, includingany of the foregoing, the primary cubic phase lithium-stuffed garnet d₅₀grain size is larger than the secondary phase inclusion d₅₀ grain size.

In some examples, including any of the foregoing, the primary cubicphase lithium-stuffed garnet d₅₀ grain size is from about 10 μm to about20 μm.

In some examples, including any of the foregoing, the primary cubicphase lithium-stuffed garnet grain size d₅₀ is from about 0.5 μm-10 μm.

In some examples, including any of the foregoing, the d₉₀ grain size ofany phase in the powder is from about 1 μm to 5 μm.

In some examples, including any of the foregoing, the d₅₀ grain sizesare substantially as shown in any one of FIGS. 1B or 9.

In some examples, including any of the foregoing, the secondary phaseinclusions are homogenously distributed.

In some examples, including any of the foregoing, the secondary phaseinclusions include more than one type of secondary phase inclusions.

In some examples, including any of the foregoing, the secondary phaseinclusions include at least two, three or four types of secondary phaseinclusions.

In some examples, including any of the foregoing, the secondary phaseinclusions are homogenously distributed over a volume of 10000 μm³ ormore.

In some examples, including any of the foregoing, the inclusions arehomogenously distributed over a volume of 1000 μm³ or more.

In some examples, including any of the foregoing, the ratio of thesecondary phase inclusion d₅₀ grain size to the primary cubic phaselithium-stuffed garnet d₅₀ grain size is between 0.1 and 10.

In some examples, including any of the foregoing, the powder is presentin a pellet.

In some examples, including any of the foregoing, the powder is presentin a green film.

In some examples, including any of the foregoing, the secondary phaseinclusion is a material selected from the group consisting of:

-   -   tetragonal phase garnet; La₂Zr₂O₇; La₂O₃; LaAlO₃;        La₂(Li_(0.5)Al_(0.5))O₄; LiLaO₂; LiZr₂O₃;    -   Li_(a)Zr_(b)O_(c), wherein 1≤a≤8, 1≤b≤2, and 1≤c≤7, and wherein        subscripts a, b, and c are selected so that Li_(a)Zr_(b)O_(c) is        charge neutral;    -   Li_(g)Al_(h)O_(i), wherein 1≤g≤5, 1≤h≤5, and 2≤i≤8, and wherein        subscripts g, h, i are selected so that Li_(g)Al_(h)O_(i) is        charge neutral;    -   La_(d)Ta_(c)O_(f), wherein 1≤d≤3, 1≤e≤7, and 4≤f≤19, and wherein        subscripts d, e, and f are selected so that La_(d)Ta_(e)O_(f) is        charge neutral;    -   Li_(r)Ta_(s)O_(t), wherein 1≤r≤2, 1≤s≤3, and 3≤t≤7, and wherein        subscripts r, s, and t are selected so that Li_(r)Ta_(s)O_(t) is        charge neutral;    -   La_(n)Nb_(p)O_(q), wherein 1≤n≤3, 1≤p≤7, and 4≤q≤19, and wherein        subscripts n, p, and q are selected so that La_(n)Nb_(p)O_(q) is        charge neutral;    -   Li_(u)Nb_(v)O_(x), wherein 1≤u≤3, 1≤p≤3, and 3≤x≤9, and wherein        subscripts u, v, and x are selected so that Li_(u)Nb_(v)O_(x) is        charge neutral; and combinations thereof.

In some examples, including any of the foregoing, the secondary phaseinclusion includes at least two materials selected from the groupconsisting of:

-   -   tetragonal phase garnet; La₂Zr₂O₇; La₂O₃; LaAlO₃;        La₂(Li_(0.5)Al_(0.5))O₄; LiLaO₂; LiZr₂O₃;    -   Li_(a)Zr_(b)O_(c), wherein 1≤a≤8, 1≤b≤2, and 1≤c≤7, and wherein        subscripts a, b, and c are selected so that Li_(a)Zr_(b)O_(c) is        charge neutral;    -   Li_(g)Al_(h)O_(i), wherein 1≤g≤5, 1≤h≤5, and 2≤i≤8, and wherein        subscripts g, h, i are selected so that Li_(g)Al_(h)O_(i) is        charge neutral;    -   La_(d)Ta_(e)O_(f), wherein 1≤d≤3, 1≤e≤7, and 4≤f≤19, and wherein        subscripts d, e, and f are selected so that La_(d)Ta_(e)O_(f) is        charge neutral;    -   Li_(r)Ta_(s)O_(t), wherein 1≤r≤2, 1≤s≤3, and 3≤t≤7, and wherein        subscripts r, s, and t are selected so that Li_(r)Ta_(s)O_(t) is        charge neutral;    -   La_(n)Nb_(p)O_(q), wherein 1≤n≤3, 1≤p≤7, and 4≤q≤19, and wherein        subscripts n, p, and q are selected so that La_(n)Nb_(p)O_(q) is        charge neutral; and    -   Li_(u)Nb_(v)O_(x), wherein 1≤u≤3, 1≤p≤3, and 3≤x≤9, and wherein        subscripts u, v, and x are selected so that Li_(u)Nb_(v)O_(x) is        charge neutral.

In some examples, including any of the foregoing, the secondary phaseinclusion includes at least three materials selected from the groupconsisting of:

-   -   tetragonal phase garnet; La₂Zr₂O₇; La₂O₃; LaAlO₃;        La₂(Li_(0.5)Al_(0.5))O₄; LiLaO₂; LiZr₂O₃;    -   Li_(a)Zr_(b)O_(c), wherein 1≤a≤8, 1≤b≤2, and 1≤c≤7, and wherein        subscripts a, b, and c are selected so that Li_(a)Zr_(b)O_(c) is        charge neutral;    -   Li_(g)Al_(h)O_(i), wherein 1≤g≤5, 1≤h≤5, and 2≤i≤8, and wherein        subscripts g, h, i are selected so that Li_(g)Al_(h)O_(i) is        charge neutral;    -   La_(d)Ta_(e)O_(f), wherein 1≤d≤3, 1≤e≤7, and 4≤f≤19, and wherein        subscripts d, e, and f are selected so that La_(d)Ta_(e)O_(f) is        charge neutral;    -   Li_(r)Ta_(s)O_(t), wherein 1≤r≤2, 1≤s≤3, and 3≤t≤7, and wherein        subscripts r, s, and t are selected so that Li_(r)Ta_(s)O_(t) is        charge neutral;    -   La_(n)Nb_(p)O_(q), wherein 1≤n≤3, 1≤p≤7, and 4≤q≤19, and wherein        subscripts n, p, and q are selected so that La_(n)Nb_(p)O_(q) is        charge neutral; and    -   Li_(u)Nb_(v)O_(x), wherein 1≤u≤3, 1≤p≤3, and 3≤x≤9, and wherein        subscripts u, v, and x are selected so that Li_(u)Nb_(v)O_(x) is        charge neutral.

In some examples, including any of the foregoing, the secondary phaseinclusion includes at least four materials selected from the groupconsisting of:

-   -   tetragonal phase garnet; La₂Zr₂O₇; La₂O₃; LaAlO₃;        La₂(Li_(0.5)Al_(0.5))O₄; LiLaO₂; LiZr₂O₃;    -   Li_(a)Zr_(b)O_(c), wherein 1≤a≤8, 1≤b≤2, and 1≤c≤7, and wherein        subscripts a, b, and c are selected so that Li_(a)Zr_(b)O_(c) is        charge neutral;    -   Li_(g)Al_(h)O_(i), wherein 1≤g≤5, 1≤h≤5, and 2≤i≤8, and wherein        subscripts g, h, i are selected so that Li_(g)Al_(h)O_(i) is        charge neutral;    -   La_(d)Ta_(e)O_(f), wherein 1≤d≤3, 1≤e≤7, and 4≤f≤19, and wherein        subscripts d, e, and f are selected so that La_(d)Ta_(e)O_(f) is        charge neutral;    -   Li_(r)Ta_(s)O_(t), wherein 1≤r≤2, 1≤s≤3, and 3≤t≤7, and wherein        subscripts r, s, and t are selected so that Li_(r)Ta_(s)O_(t) is        charge neutral;    -   La_(n)Nb_(p)O_(q), wherein 1≤n≤3, 1≤p≤7, and 4≤q≤19, and wherein        subscripts n, p, and q are selected so that La_(n)Nb_(p)O_(q) is        charge neutral; and    -   Li_(u)Nb_(v)O_(x), wherein 1≤u≤3, 1≤p≤3, and 3≤x≤9, and wherein        subscripts u, v, and x are selected so that Li_(u)Nb_(v)O_(x) is        charge neutral.

In some examples, including any of the foregoing, the total amount ofsecondary phase inclusion is 0.1, 0.2, 0.3, 0.4, 0.5, 0.6, 0.7, 0.8,0.9, 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19,20, 21, 22, 23, 24, 25, 26, 27, 28, 29, or 30 vol %.

In some examples, including any of the foregoing, the secondary phaseinclusion comprises La₂Zr₂O₇; LiAlO₂; LaAlO₃; tetragonal garnet; andLi₂ZrO₃.

In some examples, including any of the foregoing, the secondary phaseinclusion includes La₂Zr₂O₇; tetragonal garnet; Li_(a)Zr_(b)O_(c),wherein 1≤a≤8, 1≤b≤2, and 1≤c≤7, and wherein subscripts a, b, and c areselected so that Li_(a)Zr_(b)O_(c) is charge neutral; La_(d)Ta_(e)O_(f),wherein 1≤d≤3, 1≤e≤7, and 4≤f≤19, and wherein subscripts d, e, and f areselected so that La_(d)Ta_(e)O_(f) is charge neutral; andLi_(r)Ta_(s)O_(t), wherein 1≤r≤2, 1≤s≤3, and 3≤t≤7, and whereinsubscripts r, s, and t are selected so that Li_(r)Ta_(s)O_(t) is chargeneutral.

In some examples, including any of the foregoing, the secondary phaseinclusion includes La₂Zr₂O₇; tetragonal garnet; Li_(a)Zr_(b)O_(c),wherein 1≤a≤8, 1≤b≤2, and 1≤c≤7, and wherein subscripts a, b, and c areselected so that Li_(a)Zr_(b)O_(c) is charge neutral; La_(n)Nb_(p)O_(q),wherein 1≤n≤3, 1≤p≤7, and 4≤q≤19, and wherein subscripts n, p, and q areselected so that La_(n)Nb_(p)O_(q) is charge neutral; andLi_(u)Nb_(v)O_(x), wherein 1≤u≤3, 1≤p≤3, and 3≤x≤9, and whereinsubscripts u, v, and x are selected so that Li_(u)Nb_(v)O_(x) is chargeneutral.

In some examples, including any of the foregoing, the secondary phaseinclusion in the powder includes LiAlO₂ present in the composition atabout 0.1-25 vol %, Li₂ZrO₃ present in the composition at about 0.1-15vol % and LaAlO₃ present in the composition at about 0.1-15 vol %, asmeasured by quantitative XRD.

In some examples, including any of the foregoing, the secondary phaseinclusion in the composition comprises LiAlO₂ present in the compositionat about 3-8 vol %, Li₂ZrO₃ present in the composition at about 1-10 vol% and LaAlO₃ present in the composition at about 1-8 vol %, as measuredby quantitative XRD.

In some examples, including any of the foregoing, the density of thecomposition is 4.6-5.2 g/cm³ as measured by the Archimedes method.

In some examples, including any of the foregoing, the density of thecomposition is about 4.9 g/cm³ as measured by the Archimedes method.

In some examples, including any of the foregoing, pyrochlore is presentin the powder at less than 20 vol % as measured by quantitative XRDafter the electrolyte is heated at 850° C. for 2 hours.

In some examples, including any of the foregoing, the composition has atotal porosity of less than 5 vol % as determined by SEM.

In some examples, including any of the foregoing, the 90th percentilelargest pore has no lateral extent larger than 5 μm as measured bycross-section electron microscopy.

In some examples, including any of the foregoing, provided herein is agreen film comprising a powder.

In some examples, the lithium-stuffed garnet powders set forth hereinare nanodimensioned or nanostructured. As such, these powders comprisecrystalline domains of lithium-stuffed garnet wherein the mediancrystalline domains have a d₅₀ median crystalline domain size are about0.5 nm to about 10 μm in physical dimensions (e.g., diameter). Grains,herein is used interchangeably to describe crystallite domains, unlessspecified otherwise to the contrary. In some examples, the mediancrystalline domains are about 0.5 nm in diameter. In some otherexamples, the median crystalline domains are about 1 nm in diameter. Inother examples, the median crystalline domains are about 1.5 nm indiameter. In yet other examples, the median crystalline domains areabout 2 nm in diameter. In still other examples, the median crystallinedomains are about 2.5 nm in diameter. In some examples, the mediancrystalline domains are about 3.0 nm in diameter. In yet other examples,the median crystalline domains are about 3.5 nm in diameter. In otherexamples, the median crystalline domains are about 4.0 nm in diameter.In some examples, the median crystalline domains are about 5 nm indiameter. In some other examples, the median crystalline domains areabout 5.5 nm in diameter. In other examples, the median crystallinedomains are about 6.0 nm in diameter. In yet other examples, the mediancrystalline domains are about 6.5 nm in diameter. In still otherexamples, the median crystalline domains are about 7.0 nm in diameter.In some examples, the median crystalline domains are about 7.5 nm indiameter. In yet other examples, the median crystalline domains areabout 8.0 nm in diameter. In other examples, the median crystallinedomains are about 8.5 nm in diameter. In some examples, the mediancrystalline domains are about 8.5 nm in diameter. In some otherexamples, the median crystalline domains are about 9 nm in diameter. Inother examples, the median crystalline domains are about 9.5 nm indiameter. In yet other examples, the median crystalline domains areabout 10 nm in diameter. In still other examples, the median crystallinedomains are about 10.5 nm in diameter. In some examples, the mediancrystalline domains are about 11.0 nm in diameter. In yet otherexamples, the median crystalline domains are about 11.5 nm in diameter.In other examples, the median crystalline domains are about 12.0 nm indiameter. In some examples, the median crystalline domains are about12.5 nm in diameter. In some other examples, the median crystallinedomains are about 13.5 nm in diameter. In other examples, the mediancrystalline domains are about 14.0 nm in diameter. In yet otherexamples, the median crystalline domains are about 14.5 nm in diameter.In still other examples, the median crystalline domains are about 15.0nm in diameter. In some examples, the median crystalline domains areabout 15.5 nm in diameter. In yet other examples, the median crystallinedomains are about 16.0 nm in diameter. In other examples, the mediancrystalline domains are about 16.5 nm in diameter. In some examples, themedian crystalline domains are about 17 nm in diameter. In some otherexamples, the median crystalline domains are about 17.5 nm in diameter.In other examples, the median crystalline domains are about 18 nm indiameter. In yet other examples, the median crystalline domains areabout 18.5 nm in diameter. In still other examples, the mediancrystalline domains are about 19 nm in diameter. In some examples, themedian crystalline domains are about 19.5 nm in diameter. In yet otherexamples, the median crystalline domains are about 20 nm in diameter. Inother examples, the median crystalline domains are about 20.5 nm indiameter. In some examples, the median crystalline domains are about 21nm in diameter. In some other examples, the median crystalline domainsare about 21.5 nm in diameter. In other examples, the median crystallinedomains are about 22.0 nm in diameter. In yet other examples, the mediancrystalline domains are about 22.5 nm in diameter. In still otherexamples, the median crystalline domains are about 23.0 nm in diameter.In some examples, the median crystalline domains are about 23.5 nm indiameter. In yet other examples, the median crystalline domains areabout 24.0 nm in diameter. In other examples, the median crystallinedomains are about 24.5 nm in diameter. In some examples, the mediancrystalline domains are about 25.5 nm in diameter. In some otherexamples, the median crystalline domains are about 26 nm in diameter. Inother examples, the median crystalline domains are about 26.5 nm indiameter. In yet other examples, the median crystalline domains areabout 27 nm in diameter. In still other examples, the median crystallinedomains are about 27.5 nm in diameter. In some examples, the mediancrystalline domains are about 28.0 nm in diameter. In yet otherexamples, the median crystalline domains are about 28.5 nm in diameter.In other examples, the median crystalline domains are about 29.0 nm indiameter. In some examples, the median crystalline domains are about29.5 nm in diameter. In some other examples, the median crystallinedomains are about 30 nm in diameter. In other examples, the mediancrystalline domains are about 30.5 nm in diameter. In yet otherexamples, the median crystalline domains are about 31 nm in diameter. Instill other examples, the median crystalline domains are about 32 nm indiameter. In some examples, the median crystalline domains are about 33nm in diameter. In yet other examples, the median crystalline domainsare about 34 nm in diameter. In other examples, the median crystallinedomains are about 35 nm in diameter. In some examples, the mediancrystalline domains are about 40 nm in diameter. In some other examples,the median crystalline domains are about 45 nm in diameter. In otherexamples, the median crystalline domains are about 50 nm in diameter. Inyet other examples, the median crystalline domains are about 55 nm indiameter. In still other examples, the median crystalline domains areabout 60 nm in diameter. In some examples, the median crystallinedomains are about 65 nm in diameter. In yet other examples, the mediancrystalline domains are about 70 nm in diameter. In other examples, themedian crystalline domains are about 80 nm in diameter. In someexamples, the median crystalline domains are about 85 nm in diameter. Insome other examples, the median crystalline domains are about 90 nm indiameter. In other examples, the median crystalline domains are about100 nm in diameter. In yet other examples, the median crystallinedomains are about 125 nm in diameter. In still other examples, themedian crystalline domains are about 150 nm in diameter. In someexamples, the median crystalline domains are about 200 nm in diameter.In yet other examples, the median crystalline domains are about 250 nmin diameter. In other examples, the median crystalline domains are about300 nm in diameter. In some examples, the median crystalline domains areabout 350 nm in diameter. In some other examples, the median crystallinedomains are about 400 nm in diameter. In other examples, the mediancrystalline domains are about 450 nm in diameter. In yet other examples,the median crystalline domains are about 500 nm in diameter. In stillother examples, the median crystallite domains are about 550 nm indiameter. In some examples, the median crystalline domains are about 600nm in diameter. In yet other examples, the median crystalline domainsare about 650 nm in diameter. In other examples, the median crystallinedomains are about 700 nm in diameter. In some examples, the mediancrystalline domains are about 750 nm in diameter. In some otherexamples, the median crystalline domains are about 800 nm in diameter.In other examples, the median crystalline domains are about 850 nm indiameter. In yet other examples, the median crystalline domains areabout 900 nm in diameter. In still other examples, the mediancrystalline domains are about 950 nm in diameter. In some examples, themedian crystalline domains are about 1000 nm in diameter. In someexamples, the median crystalline domains are about 2 μm in diameter. Insome examples, the median crystalline domains are about 3 μm indiameter. In some examples, the median crystalline domains are about 4μm in diameter. In some examples, the median crystalline domains areabout 5 μm in diameter. In some examples, the median crystalline domainsare about 6 μm in diameter. In some examples, the median crystallinedomains are about 7 μm in diameter. In some examples, the mediancrystalline domains are about 8 μm in diameter. In some examples, themedian crystalline domains are about 9 μm in diameter. In some examples,the median crystalline domains are about 10 μm in diameter.

IV. Garnet Materials Suitable for Use in the Multiphase Films andPowders

In some examples, disclosed herein are nanostructured lithium-stuffedgarnet-based powder. Also, disclosed herein are lithium-stuffed garnetthin films that have grains therein less than 10 μm in physicaldimensions, e.g., d₅₀ grain sizes less than 10 μm. In some examples,these films are less than 200 μm in film thickness. In some examples,these films are less than 100 μm in film thickness. In some examples,these films are less than 75 μm in film thickness. In some examples,these films are less than 50 μm in film thickness. In some of theseexamples, the films, which are less than 50 μm in film thickness, areseveral centimeters to several meters in length. In some examples, thefilms have a high ionic conductivity, which in some examples is greaterthan 10⁻⁴5/cm at room temperature. In some examples, the films arestrong, have good mechanical integrity, and prevent the ingress oflithium dendrites when used as an electrolyte in lithium secondarybatteries. Some of these films are layered onto cathode active materialsand optionally binders, dispersants, solvents, salts, and other electronand ionic conductors.

In certain examples, the garnet material is selected fromLi_(A)La_(B)M′_(c)M″_(D)Zr_(E)O_(F), wherein 4<A<8.5, 1.5<B<4, 0.1<C≤2,0≤D≤2; 1≤E<3, 10<F<13, and M′=Al and M″ is selected from Mo, W, Y, Nb,Sb, Ca, Ba, Sr, Ce, Hf, and Rb.

In certain examples, the garnet material is selected fromLi_(a)La_(b)Zr_(c)Al_(d)M″_(e)O_(f), wherein 5<a<7.7; 2<b<4; 0<c≤2.5;0≤d≤2; 0≤e<3, 10<f<14 and M″ is a metal selected from Nb, Ta, V, W, Ga,Mo, and Sb.

In some examples, the garnet material described herein is used as anelectrolyte. In some of these embodiments, the garnet has the formulaLi_(x)La₃Zr₂O₁₂.y½Al₂O₃; wherein 5.0<x<9 and 0.1<y<1.5. In some of theseexamples, the electrolyte is Li_(x)La₃Zr₂O₁₂.0.35Al₂O₃. In other ofthese examples, the electrolyte is Li₇La₃Zr₂O₁₂.0.35Al₂O₃.

In some of the examples wherein the garnet is an electrolyte, the garnetdoes not include any Nb, W or Mo.

In some examples, the lithium-stuffed garnet is Li₇La₃Zr₂O₁₂ (LLZ) andis doped with alumina. In certain examples, the LLZ is doped by addingAl₂O₃ to the mixture of chemical precursors that is used to make theLLZ. In certain other examples, the LLZ is doped by the aluminum in analuminum reaction vessel that contacts the LLZ.

In some examples, the alumina doped LLZ has a high ionic conductivity,e.g., greater than 10⁻⁴ S/cm at room temperature.

In some examples, a higher conductivity is observed when some of the Zrin LLZ is partially replaced by a higher valence species, e.g., Nb, Sb,or combinations thereof. In some examples, the conductivity reaches ashigh as 10⁻³ S/cm at room temperature.

In some examples, the lithium-stuffed garnet set forth herein isLi_(x)A₃M₂O₁₂ doped with 0.35 molar amount of Al per Li_(x)A₃M₂O₁₂. Incertain of these examples, x is about 5. In certain other examples, x isabout 5.5. In yet other examples, x is about 6.0. In some otherexamples, x is about 6.5. In still other examples, x is about 7.0. Insome other examples, x is about 7.5.

In some examples, the lithium-stuffed garnet is doped with about 0.2,0.25, 0.3, 0.35, 0.4, 0.45, 0.5, 0.55, 0.6, 0.65, 0.7, 0.75, 0.8, 0.85,0.9, 0.95, or 1, 1.1, 1.2, 1.3, 1.4 molar amount of Al perLi_(x)A₃M₂O₁₂.

In some examples, the lithium-stuffed garnet is doped with 0.35 molaramount of Al per Li_(x)A₃M₂O₁₂.

In the examples, herein, the subscripts and molar coefficients in theempirical formulas are based on the quantities of raw materialsinitially batched to make the described examples.

In some examples, the instant disclosure provides a compositionincluding a lithium-stuffed garnet and Al₂O₃. In certain examples, thelithium-stuffed garnet is doped with alumina. In some examples, thelithium-stuffed garnet is characterized by the empirical formulaLi_(A)La_(B)M′_(c)M″_(D)Zr_(E)O_(F), wherein 5<A<8, 1.5<B<4, 0.1<C≤2,0≤D≤2; 1≤E≤2, 10<F≤13, and M′=Al and M″ is either absent or isindependently selected from Mo, W, Nb, Sb, Ca, Ba, Sr, Ce, Hf, and Rb;and wherein the molar ratio of Garnet:Al₂O₃ is between 1:0.05 and 1:0.7.

In some examples, the lithium-stuffed garnet isLi_(A)La_(B)Zr_(C)M′_(D)M″_(E)O₁₂ and 5<A<7.7, 2<B<4, 0<C<2.5, M′comprises a metal dopant selected from a material including Al and0<D<2, M″ comprises a metal dopant selected from a material includingNb, V, W, Mo, Sb, and wherein 0<e<2. In some of the examples above, A isabout 5.9-7. In some examples, A is 5.9. In other examples, A is 6.0. Insome other examples, A is 6.1. In some examples, A is 6.2. In someexamples, A is 6.3. In some examples, A is 6.4. In some examples, A is6.5. In some other examples, A is 6.6. In other examples, A is 6.6. Insome examples, A is 6.7. In some other examples, A is 6.8. In someexamples, A is 6.9. In some examples, A is 7.0. In other examples, A is7.1. In some examples, A is 7.2. In some other examples, A is 7.3. Insome examples, A is 7.4. In some other examples, A is 7.5. In someexamples, A is 7.6. In some other examples, A is 7.7. In some examples,A is 7.8. In some other examples, A is 7.9. In some examples, A is 8.0.In some other examples, A is 8.1. In some examples, A is 8.2. In someother examples, A is 8.3. In some examples, A is 8.4. In some otherexamples, A is 8.5. In some examples, A is 8.6. In some other examples,A is 8.7. In some examples, A is 8.8. In some other examples, A is 8.9.In some examples, A is 9.0. In some other examples, A is 9.1. Yet insome other examples, A is 9.2. In some examples, A is 9.3. In some otherexamples, A is 9.4. In some examples, A is 9.5. In some other examples,A is 9.6. In some examples, A is 9.7.

In some examples, including any of the foregoing, B is about 2. In someother examples, B is about 2.5. In other examples, B is about 3.0. Incertain other examples, B is about 3.5. In yet other examples, B isabout 3.5. In yet other examples, B is about 4.0.

In some examples, including any of the foregoing, C is 0.5. In otherexamples, C is 0.6. In some other examples, C is 0.7. In some otherexamples, C is 0.8. In certain other examples, C is 0.9. In otherexamples, C is 1.0. In yet other examples, C is 1.1. In certainexamples, C is 1.2. In other examples, C is 1.3. In some other examples,C is 1.4. In some other examples, C is 1.5. In certain other examples, Cis 1.6. In other examples, C is 1.7. In yet other examples, C is 1.8. Incertain examples, C is 1.9. In yet other examples, C is 2.0. In otherexamples, C is 2.1. In some other examples, C is 2.2. In some otherexamples, C is 2.3. In certain other examples, C is 2.4. In otherexamples, C is 2.5. In yet other examples, C is 2.6. In certainexamples, C is 2.7. In yet other examples, C is 2.8. In other examples,C is 2.9. In some other examples, C is 3.0.

In some examples, including any of the foregoing, D is 0.5. In otherexamples, D is 0.6. In some other examples, D is 0.7. In some otherexamples, D is 0.8. In certain other examples, D is 0.9. In otherexamples, D is 1.0. In yet other examples, D is 1.1. In certainexamples, D is 1.2. In other examples, D is 1.3. In some other examples,D is 1.4. In some other examples, D is 1.5. In certain other examples, Dis 1.6. In other examples, D is 1.7. In yet other examples, D is 1.8. Incertain examples, D is 1.9. In yet other examples, D is 2.0. In otherexamples, D is 2.1. In some other examples, D is 2.2. In some otherexamples, D is 2.3. In certain other examples, D is 2.4. In otherexamples, D is 2.5. In yet other examples, D is 2.6. In certainexamples, D is 2.7. In yet other examples, D is 2.8. In other examples,D is 2.9. In some other examples, D is 3.0.

In some examples, including any of the foregoing, E is 0.5. In otherexamples, E is 0.6. In some other examples, E is 0.7. In some otherexamples, E is 0.8. In certain other examples, E is 0.9. In otherexamples, E is 1.0. In yet other examples, E is 1.1. In certainexamples, E is 1.2. In other examples, E is 1.3. In some other examples,E is 1.4. In some other examples, E is 1.5. In certain other examples, Eis 1.6. In other examples, E is 1.7. In yet other examples, E is 1.8. Incertain examples, E is 1.9. In yet other examples, E is 2.0. In otherexamples, E is 2.1. In some other examples, E is 2.2. In some otherexamples, E is 2.3. In certain other examples, E is 2.4. In otherexamples, E is 2.5. In yet other examples, E is 2.6. In certainexamples, E is 2.7. In yet other examples, E is 2.8. In other examples,E is 2.9. In some other examples, E is 3.0.

In some examples, including any of the foregoing, F is 11.1. In otherexamples, F is 11.2. In some other examples, F is 11.3. In some otherexamples, F is 11.4. In certain other examples, F is 11.5. In otherexamples, F is 11.6. In yet other examples, F is 11.7. In certainexamples, F is 11.8. In other examples, F is 11.9. In some otherexamples, F is 12. In some other examples, F is 12.1. In certain otherexamples, F is 12.2. In other examples, F is 12.3. In yet otherexamples, F is 12.3. In certain examples, F is 12.4. In yet otherexamples, F is 12.5. In other examples, F is 12.6. In some otherexamples, F is 12.7. In some other examples, F is 12.8. In certain otherexamples, E is 12.9. In other examples, F is 13.

In some examples, including any of the foregoing, provided herein is acomposition characterized by the empirical formulaLi_(x)La₃Zr₂O₁₂.y½Al₂O₃; wherein 5.0<x<9 and 0.1<y<1.5. In someexamples, x is 5. In other examples, xis 5.5. In some examples, xis 6.In some examples, x is 6.5. In other examples, x is 7. In some examples,x is 7.5. In other examples xis 8. In some examples, y is 0.3. In someexamples, y is 0.35. In other examples, y is 0.4. In some examples, y is0.45. In some examples, y is 0.5. In other examples, y is 0.55. In someexamples, y is 0.6. In other examples y is 0.7. In some examples, y is0.75. In other examples, y is 0.8. In some examples, y is 0.85. In otherexamples y is 0.9. In some examples, y is 0.95. In other examples, y is1.0. x and y are selected to that the compound, Li_(x)La₃Zr₂O₁₂.y½Al₂O₃,is charge neutral.

In some examples, including any of the foregoing, herein is acomposition is characterized by the empirical formulaLi₇La₃Zr₂O₁₂.0.35Al₂O₃.

In some examples, including any of the foregoing, A is 5, 6, 7, or 8. Incertain examples, wherein A is 7.

In some examples, including any of the foregoing, E is 1, 1.5, or 2. Incertain examples, E is 2.

In some examples, including any of the foregoing, C and D are 0.

In some examples, provided herein is a composition wherein the molarratio of Garnet:Al₂O₃ is between 1:0.1 and 1:0.65.

In some examples, provided herein is a composition wherein the molarratio of Garnet:Al₂O₃ is between 1:0.15 and 1:0.55.

In some examples, provided herein is a composition wherein the molarratio of Garnet:Al₂O₃ is between 1:0.25 and 1:0.45.

In some examples, provided herein is a composition wherein the molarratio of Garnet:Al₂O₃ is 1:0.35.

In some examples, provided herein is a composition wherein the molarratio of Al to garnet is 0.35.

In some examples, provided herein is a composition wherein thelithium-stuffed garnet is characterized by the empirical formulaLi₇La₃Zr₂O₁₂ and is doped with aluminum.

In some examples, the lithium-stuffed garnet is Li₇La₃Zr₂O₁₂ (LLZ) andis doped with alumina. In certain examples, the LLZ is doped by addingAl₂O₃ to the reactant precursor mix that is used to make the LLZ. Incertain other examples, the LLZ is doped by the aluminum in an aluminumreaction vessel that contacts the LLZ. When the LLZ is doped withalumina, results suggest that, without being bound by theory, Al³⁺replaces Li⁺. In these examples, one Al³⁺ replaces 3 Li⁺ ions. In doingso, the doping of Al³⁺ in LLZ creates Li⁺ vacancies. These Li⁺ vacanciescreate holes into which conducting Li⁺ ions can conduct. Dopinglithium-stuffed garnets with alumina (or replacing Li⁺ with Al³⁺)increases the stability of the cubic, conducting phase of thelithium-stuffed garnet relative to the tetragonal, lower conductivityphase of garnet. In some examples, this increased conductivity isreferred to as increased ionic conductivity. In some examples, thisincreased conductivity is referred to as increased Li conductivity.

V. Secondary Phases in the Multiphase Films and Powders

Set forth herein are compositions, powders, films, multiphase films,pellets, and monoliths that include cubic lithium-stuffed garnet andsecondary phases.

In some examples, including any of the foregoing, the secondary phase isselected from the group consisting tetragonal garnet, Li_(x)Al_(y)O_(z)(x is 1-5; y is 1-5; z is 2-8), LiZr₂O₃, La₂Zr₂O₇, La₂O₃,Li_(x)Zr_(y)O_(z) (x is 2-8; y is 0-1; z is 1-6), LaAlO₃,La₂(Li_(0.5)Al_(0.5))O₄, LiLaO₂, and any combination thereof.

In some examples, including any of the foregoing, the secondary phase istetragonal garnet.

In some examples, including any of the foregoing, the secondary phase isLi_(x)Al_(y)O_(z) (x is 1-5; y is 1-5; z is 2-8) and LiZr₂O₃.

In some examples, including any of the foregoing, the secondary phase isLi_(x)Al_(y)O_(z) (x is 1-5; y is 1-5; z is 2-8) and La₂Zr₂O₇.

In some examples, including any of the foregoing, the secondary phase isLi_(x)Al_(y)O_(z) (x is 1-5; y is 1-5; z is 2-8) and Li_(x)Zr_(y)O_(z)(x is 2-8; y is 0-1; z is 1-6).

In some examples, including any of the foregoing, the secondary phase isLi_(x)Al_(y)O_(z) (x is 1-5; y is 1-5; z is 2-8) and LaAlO₃.

In some examples, including any of the foregoing, the secondary phase isLi_(x)Al_(y)O_(z) (x is 1-5; y is 1-5; z is 2-8) and tetragonal garnet.

In some examples, including any of the foregoing, the secondary phase isLi_(x)Al_(y)O_(z) (x is 1-5; y is 1-5; z is 2-8) andLa₂(Li_(0.5)Al_(0.5))O₄.

In some examples, including any of the foregoing, the secondary phase isLi_(x)Al_(y)O_(z) (x is 1-5; y is 1-5; z is 2-8) and LiLaO₂.

In some examples, including any of the foregoing, the secondary phase isLiZr₂O₃ and La₂Zr₂O₇.

In some examples, including any of the foregoing, the secondary phase isLiZr₂O₃ and La₂O₃.

In some examples, including any of the foregoing, the secondary phase isLiZr₂O₃ and Li_(x)Zr_(y)O_(z) (x is 2-8; y is 0-1; z is 1-6).

In some examples, including any of the foregoing, the secondary phase isLiZr₂O₃ and LaAlO₃.

In some examples, including any of the foregoing, the secondary phase isLiZr₂O₃ and La₂(Li_(0.5)Al_(0.5))O₄.

In some examples, including any of the foregoing, the secondary phase isLiZr₂O₃ and LiLaO₂. In some examples, including any of the foregoing,the secondary phase is LiZr₂O₃ and tetragonal garnet.

In some examples, including any of the foregoing, the secondary phase isLi_(x)Al_(y)O_(z) (x is 1-5; y is 1-5; z is 2-8). In some examples, inLi_(x)Al_(y)O_(z), x is 1. In other examples, xis 1.5. In otherexamples, x is 2. In other examples, x is 2.5. In other examples, x is3. In other examples, x is 3.5. In other examples, x is 4. In otherexamples, x is 4.5. In other examples, x is 5.

In some examples, including any of the foregoing, the secondary phase isLi_(x)Al_(y)O_(z) (x is 1-5; y is 1-5; z is 2-8). In some examples, inLi_(x)Al_(y)O_(z), y is 1. In other examples, y is 1.5. In otherexamples, y is 2. In other examples, y is 2.5. In other examples, y is3. In other examples, y is 3.5. In other examples, y is 4. In otherexamples, y is 4.5. In other examples, y is 5.

In some examples, including any of the foregoing, the secondary phase isLi_(x)Al_(y)O_(z) (x is 1-5; y is 1-5; z is 2-8). In some examples, inLi_(x)Al_(y)O_(z), z is 2. In other examples, z is 2.5. In otherexamples, z is 3. In other examples, z is 3.5. In other examples, z is4. In other examples, z is 4.5. In other examples, z is 5. In otherexamples, z is 5.5. In other examples, z is 6. In other examples, z is6.5. In other examples, z is 7. In other examples, z is 7.5. In otherexamples, z is 8.

In some examples, including any of the foregoing, the secondary phase isLi_(x)Zr_(y)O_(z) (x is 2-8; y is 0-1; z is 1-6). In some examples, inLi_(x)Zr_(y)O_(z), x is 2. In other examples, x is 2.5. In otherexamples, x is 3. In other examples, x is 3.5. In other examples, x is4. In other examples, x is 4.5. In other examples, x is 5. In otherexamples, x is 5.5. In other examples, x is 6. In other examples, x is7. In other examples, x is 7.5. In other examples, x is 8.

In some examples, including any of the foregoing, the secondary phase isLi_(x)Zr_(y)O_(z) (x is 2-8; y is 0-1; z is 1-6). In some examples, inLi_(x)Zr_(y)O_(z), y is 0. In other examples, y is 1. In other examples,y is 2.

In some examples, the secondary phase material is Li_(x)Zr_(y)O_(z) (xis 2-8; y is 0-1; z is 1-7). In some examples, in Li_(x)Zr_(y)O_(z), zis 1. In other examples, z is 1.5. In other examples, z is 2. In otherexamples, z is 2.5. In other examples, z is 3. In other examples, z is3.5. In other examples, z is 4. In other examples, z is 4.5. In otherexamples, z is 5. In other examples, z is 5.5. In other examples, z is6. In other examples, z is 7.

In some examples, including any of the foregoing, the secondary phase,the secondary phase may include Li₅GaO₄, LiGaO₂, LiGa₅O₈, La₃Ga₅O₁₂, orLa₄Ga₂O₉.

In some examples, including any of the foregoing, the secondary phasethe secondary phase material may include Li₂O or Li₂O₂.

In some examples, including any of the foregoing, the secondary phasethe secondary phase material may include Li₃NbO₄, Li₈Nb₂O₉, LiNb₃O₈,LiNbO₂, LiNbO₃, La₃NbO₇, LaNb₇O₁₂, LaNbO₄, NbO, NbO₂, or Nb₂O₅.

In some examples, including any of the foregoing, the secondary phasethe secondary phase material may include Li₃TaO₄, Li₅TaO₅, LiTa₃O₈,LiTaO₃, Ta₂O₅, La₃TaO₇, LaTa₃O₉, LaTa₇O₁₉, or LaTaO₄.

In some examples, including any of the foregoing, the secondary phasethe total secondary phase material is between 30-0.1 vol % as measuredby quantitative XRD or back-scattered electron microscopy withquantitative image analysis after preparation by a focused-ion beamcross-section.

In some examples, including any of the foregoing, the amount ofsecondary phase present, with respect to the total amount of primary andsecondary phases, is 0.1% by volume. In some examples, the amount ofsecondary phase present, with respect to the total amount of primary andsecondary phases, is 0.5% by volume. In some examples, the amount ofsecondary phase present, with respect to the total amount of primary andsecondary phases, is 1% by volume. In some examples, the amount ofsecondary phase present, with respect to the total amount of primary andsecondary phases, is 1.5% by volume. In some examples, the amount ofsecondary phase present, with respect to the total amount of primary andsecondary phases, is 2% by volume. In some examples, the amount ofsecondary phase present, with respect to the total amount of primary andsecondary phases, is 2.5% by volume. In some examples, the amount ofsecondary phase present, with respect to the total amount of primary andsecondary phases, is 3% by volume. In some examples, the amount ofsecondary phase present, with respect to the total amount of primary andsecondary phases, is 3.5% by volume. In some examples, the amount ofsecondary phase present, with respect to the total amount of primary andsecondary phases, is 4% by volume. In some examples, the amount ofsecondary phase present, with respect to the total amount of primary andsecondary phases, is 4.5% by volume. In some examples, the amount ofsecondary phase present, with respect to the total amount of primary andsecondary phases, is 5% by volume. In some examples, the amount ofsecondary phase present, with respect to the total amount of primary andsecondary phases, is 5.5% by volume. In some examples, the amount ofsecondary phase present, with respect to the total amount of primary andsecondary phases, is 6% by volume. In some examples, the amount ofsecondary phase present, with respect to the total amount of primary andsecondary phases, is 6.5% by volume. In some examples, the amount ofsecondary phase present, with respect to the total amount of primary andsecondary phases, is 7% by volume. In some examples, the amount ofsecondary phase present, with respect to the total amount of primary andsecondary phases, is 7.5% by volume. In some examples, the amount ofsecondary phase present, with respect to the total amount of primary andsecondary phases, is 8% by volume. In some examples, the amount ofsecondary phase present, with respect to the total amount of primary andsecondary phases, is 8.5% by volume. In some examples, the amount ofsecondary phase present, with respect to the total amount of primary andsecondary phases, is 9% by volume. In some examples, the amount ofsecondary phase present, with respect to the total amount of primary andsecondary phases, is 9.5% by volume. In some examples, the amount ofsecondary phase present, with respect to the total amount of primary andsecondary phases, is 10% by volume. In some examples, the amount ofsecondary phase present, with respect to the total amount of primary andsecondary phases, is 10.5% by volume. In some examples, the amount ofsecondary phase present, with respect to the total amount of primary andsecondary phases, is 11% by volume. In some examples, t the amount ofsecondary phase present, with respect to the total amount of primary andsecondary phases, is 11.5% by volume. In some examples, the amount ofsecondary phase present, with respect to the total amount of primary andsecondary phases, is 12% by volume. In some examples, the amount ofsecondary phase present, with respect to the total amount of primary andsecondary phases, is 12.5% by volume. In some examples, the amount ofsecondary phase present, with respect to the total amount of primary andsecondary phases, is 13% by volume. In some examples, the amount ofsecondary phase present, with respect to the total amount of primary andsecondary phases, is 13.5% by volume. In some examples, the amount ofsecondary phase present, with respect to the total amount of primary andsecondary phases, is 14% by volume. In some examples, the amount ofsecondary phase present, with respect to the total amount of primary andsecondary phases, is 14.5% by volume. In some examples, the amount ofsecondary phase present, with respect to the total amount of primary andsecondary phases, is 15% by volume. In some examples, the amount ofsecondary phase present, with respect to the total amount of primary andsecondary phases, is 15.5% by volume. In some examples, the amount ofsecondary phase present, with respect to the total amount of primary andsecondary phases, is 16% by volume. In some examples, the amount ofsecondary phase present, with respect to the total amount of primary andsecondary phases, is 16.5% by volume. In some examples, the amount ofsecondary phase present, with respect to the total amount of primary andsecondary phases, is 17% by volume. In some examples, the amount ofsecondary phase present, with respect to the total amount of primary andsecondary phases, is 17.5% by volume. In some examples, the amount ofsecondary phase present, with respect to the total amount of primary andsecondary phases, is 18% by volume. In some examples, the amount ofsecondary phase present, with respect to the total amount of primary andsecondary phases, is 18.5% by volume. In some examples, the amount ofsecondary phase present, with respect to the total amount of primary andsecondary phases, is 19% by volume. In some examples, the amount ofsecondary phase present, with respect to the total amount of primary andsecondary phases, is 19.5% by volume. In some examples, the amount ofsecondary phase present, with respect to the total amount of primary andsecondary phases, is 20% by volume. In some examples, the amount ofsecondary phase present, with respect to the total amount of primary andsecondary phases, is 20.5% by volume. In some examples, the amount ofsecondary phase present, with respect to the total amount of primary andsecondary phases, is 21% by volume. In some examples, the amount ofsecondary phase present, with respect to the total amount of primary andsecondary phases, is 21.5% by volume. In some examples, the amount ofsecondary phase present, with respect to the total amount of primary andsecondary phases, is 22% by volume. In some examples, the amount ofsecondary phase present, with respect to the total amount of primary andsecondary phases, is 22.5% by volume. In some examples, the amount ofsecondary phase present, with respect to the total amount of primary andsecondary phases, is 23% by volume. In some examples, the amount ofsecondary phase present, with respect to the total amount of primary andsecondary phases, is 23.5% by volume. In some examples, the amount ofsecondary phase present, with respect to the total amount of primary andsecondary phases, is 24% by volume. In some examples, the amount ofsecondary phase present, with respect to the total amount of primary andsecondary phases, is 24.5% by volume. In some examples, the amount ofsecondary phase present, with respect to the total amount of primary andsecondary phases, is 25% by volume. In some examples, the amount ofsecondary phase present, with respect to the total amount of primary andsecondary phases, is 25.5% by volume. In some examples, the amount ofsecondary phase present, with respect to the total amount of primary andsecondary phases, is 26% by volume. In some examples, the amount ofsecondary phase present, with respect to the total amount of primary andsecondary phases, is 26.5% by volume. In some examples, the amount ofsecondary phase present, with respect to the total amount of primary andsecondary phases, is 27% by volume. In some examples, the amount ofsecondary phase present, with respect to the total amount of primary andsecondary phases, is 27.5% by volume. In some examples, the amount ofsecondary phase present, with respect to the total amount of primary andsecondary phases, is 28% by volume. In some examples, the amount ofsecondary phase present, with respect to the total amount of primary andsecondary phases, is 28.5% by volume. In some examples, the amount ofsecondary phase present, with respect to the total amount of primary andsecondary phases, is 29% by volume. In some examples, the amount ofsecondary phase present, with respect to the total amount of primary andsecondary phases, is 29.5% by volume. In some examples, the amount ofsecondary phase present, with respect to the total amount of primary andsecondary phases, is 30% by volume.

Grain sizes, as used herein and unless otherwise specified, are measuredby either microscopy, e.g., transmission electron microscopy or scanningelectron microscopy, or by x-ray diffraction processes.

In some examples, provided herein is a film having grains with a d₅₀diameter less than 10 μm. In certain examples, the film has grainshaving a d₅₀ diameter less than 9 μm. In other examples, the grainshaving a d₅₀ diameter less than 8 μm. In some examples, the grains havea d₅₀ diameter less than 7 μm. In certain examples, the film has grainshaving a d₅₀ diameter less than 6 μm. In other examples, the film hasgrains having a d₅₀ diameter less than 5 μm. In some examples, the filmhas grains having a d₅₀ diameter less than 4 μm. In other examples, thefilm has grains having a d₅₀ diameter less than 3 μm. In certainexamples, the film has grains having a d₅₀ diameter less than 2 μm. Inother examples, the film has grains having a d₅₀ diameter less than 1μm.

In some examples, the grains in the films set forth herein have d₅₀diameters of between 10 nm and 10 μm. In some examples, the grains inthe films set forth herein have d₅₀ diameters of between 100 nm and 10μm.

In some examples, the films set forth herein have a Young's Modulus ofabout 130-150 GPa. In some other examples, the films set forth hereinhave a Vicker's hardness of about 5-7 GPa.

In some examples, the films set forth herein have a porosity less than20% by volume. In other examples, the films set forth herein have aporosity less than 10% by volume. In yet other examples, the films setforth herein have a porosity less than 5% by volume. In still otherexamples, the films set forth herein have a porosity less than 3% byvolume as measured by the Archimedes' method, or by quantitativeanalysis of electron microscope images of cross-sections.

VI. Pellets

Set forth herein are pellets that include calcined garnet powders,optionally with secondary phases present. Also set forth herein aregarnet precursor powders such as aluminum hydroxides, oxides, and/ornitrates. Precursors may also include lithium carbonate, lithiumhydroxide, lithium oxide, zirconium oxide, lanthanum oxide, lanthanumnitrate, gallium oxide, gallium nitrate, niobium oxide, etc. Garnetprecursors may or may not be hydrates. The pellets may optionallyinclude a binder, dispersant, surfactant, and/or plasticizer. Thepellets are formed in a press, by centrifugation or by gel-casting. Thepellets may be further densified via a WIP or CIP process.

The unsintered pellets set forth herein may be sintered by heating thepellets to about 200° C. to 1200° C. for about 20 minutes to 30 hours oruntil crystallization occurs. Sintering may occur with the assistance ofpressure, as in FAST sintering, hot press sintering, sinter forging,WIP, or HIP. Sintering may occur with the assistance of an electricfield, as in FAST sintering or SPS.

VII. Processes of Making the Materials Described Herein

Set forth herein are processes for making a composition. The compositionmay be a powder, a pellet, a thin film, or a monolith.

In some examples, the composition includes: a primary cubic phaselithium-stuffed garnet characterized by the chemical formulaLi_(A)La_(B)Al_(C)M″DZr_(E)O_(F), wherein 5<A<8, 1.5<B<4, 0.1<C<2,0≤D<2; 1<E<3, 10<F<13, and M″ is selected from the group consisting ofMo, W, Nb, Y, Ta, Ga, Sb, Ca, Ba, Sr, Ce, Hf, and Rb; a secondary phaseinclusion in the primary cubic phase lithium-stuffed garnet; wherein theprimary cubic phase lithium-stuffed garnet is present at about 70-99.9vol % with respect to the volume of the composition; and the secondaryphase inclusion is present at about 30-0.1 vol % with respect to thevolume of the composition.

In some examples, including any of the foregoing, the process includesthe following steps: (a) providing a mixture of chemical precursors tothe composition, wherein the amount of Al in the mixture exceeds thesolubility limit of Al in LLZO; and (b) calcining the mixture by heatingit to at least 800° C.

In some examples, including any of the foregoing, the chemicalprecursors include a precursor selected from lithium hydroxide (e.g.,LiOH), lithium oxide (e.g., Li₂O), zirconium oxide (e.g., ZrO₂),zirconium nitrate, zirconium acetate, lanthanum oxide (e.g., La₂O₃),lanthanum nitrate, lanthanum acetate, aluminum oxide (e.g., Al₂O₃),aluminum (e.g., Al), aluminum nitrate (e.g., AlNO₃), aluminum nitratenonahydrate, aluminum (oxy) hydroxide (gibbsite and boehmite), galliumoxide, corundum, niobium oxide (e.g., Nb₂O₅), tantalum oxide (e.g.,Ta₂O₅), and combinations thereof.

In some examples, including any of the foregoing, the heating is in air.

In some examples, including any of the foregoing, the heating is inargon or nitrogen.

In some examples, including any of the foregoing, the heating is to800-1000° C. for two to ten hours.

In some examples, including any of the foregoing, before step (b), theprocess includes step (a)(1) providing a green film by making a slurryof the composition and casting the slurry onto a substrate. In someexamples, the green film includes secondary phases in addition tolithium-stuffed garnet and the chemical precursors to lithium-stuffedgarnet.

In some examples, including any of the foregoing, the green filmcomprises secondary phase inclusions.

In some examples, including any of the foregoing, the process includesstep (c) sintering the green film. In some examples, including any ofthe foregoing, the sintering is assisted by the presence of secondaryphases. For example, in some examples, the sintering results in a denserfilm when secondary phases are present in the green film that issintered as compared to green film sintered which does not includesecondary phases. In some examples, the secondary phases are presentbecause the amount of Al or Al₂O₃ in the green film exceeds a thresholdamount. In some examples, this threshold amount is the solubility limitof either Al or Al₂O₃ in LLZO, e.g., Li₇La₃Zr₂O₁₂. Because Al exceedsthe solubility limit, the Al precipitates out as a new phase or causesother phases to precipitate out in addition to the cubic lithium-stuffedgarnet phase.

In some examples, including any of the foregoing, the sintering thegreen film includes sintering between setter plates. In some examples,the sintering includes any sintering process set forth in InternationalPCT Patent Application No. PCT/US2016/027922, filed Apr. 15, 2016,SETTER PLATES FOR SOLID ELECTROLYTE FABRICATION AND METHODS OF USING THESAME TO PREPARE DENSE SOLID ELECTROLYTES, the contents of which areherein incorporated by reference in their entirety for all purposes. Insome of the processes disclosed herein, the sintering occurs betweeninert setter plates, meaning setter plates that do not react with orstick to the film. In some examples, when the sintering occurs betweeninert setter plates, a pressure is applied by the setter plates onto thesintering film. In certain examples, the pressure is between 0.1 and1000 pounds per square inch (PSI). In some examples, the pressure is 0.1PSI. In some examples, the pressure is 0.2 PSI. In some examples, thepressure is 0.3 PSI. In some examples, the pressure is 0.4 PSI. In someexamples, the pressure is 0.5 PSI. In some examples, the pressure is 1PSI. In some examples, the pressure is 2 PSI. In other examples, thepressure is 10 PSI. In still others, the pressure is 20 PSI. In someother examples, the pressure is 30 PSI. In certain examples, thepressure is 40 PSI. In yet other examples, the pressure is 50 PSI. Insome examples, the pressure is 60 PSI. In yet other examples, thepressure is 70 PSI. In certain examples, the pressure is 80 PSI. Inother examples, the pressure is 90 PSI. In yet other examples, thepressure is 100 PSI. In some examples, the pressure is 110 PSI. In otherexamples, the pressure is 120 PSI. In still others, the pressure is 130PSI. In some other examples, the pressure is 140 PSI. In certainexamples, the pressure is 150 PSI. In yet other examples, the pressureis 160 PSI. In some examples, the pressure is 170 PSI. In yet otherexamples, the pressure is 180 PSI. In certain examples, the pressure is190 PSI. In other examples, the pressure is 200 PSI. In yet otherexamples, the pressure is 210 PSI.

In some of the above examples, the pressure is 220 PSI. In otherexamples, the pressure is 230 PSI. In still others, the pressure is 240PSI. In some other examples, the pressure is 250 PSI. In certainexamples, the pressure is 260 PSI. In yet other examples, the pressureis 270 PSI. In some examples, the pressure is 280 PSI. In yet otherexamples, the pressure is 290 PSI. In certain examples, the pressure is300 PSI. In other examples, the pressure is 310 PSI. In yet otherexamples, the pressure is 320 PSI. In some examples, the pressure is 330PSI. In other examples, the pressure is 340 PSI. In still others, thepressure is 350 PSI. In some other examples, the pressure is 360 PSI. Incertain examples, the pressure is 370 PSI. In yet other examples, thepressure is 380 PSI. In some examples, the pressure is 390 PSI. In yetother examples, the pressure is 400 PSI. In certain examples, thepressure is 410 PSI. In other examples, the pressure is 420 PSI. In yetother examples, the pressure is 430 PSI. In some other examples, thepressure is 440 PSI. In certain examples, the pressure is 450 PSI. Inyet other examples, the pressure is 460 PSI. In some examples, thepressure is 470 PSI. In yet other examples, the pressure is 480 PSI. Incertain examples, the pressure is 490 PSI. In other examples, thepressure is 500 PSI. In yet other examples, the pressure is 510 PSI.

In some of the above examples, the pressure is 520 PSI. In otherexamples, the pressure is 530 PSI. In still others, the pressure is 540PSI. In some other examples, the pressure is 550 PSI. In certainexamples, the pressure is 560 PSI. In yet other examples, the pressureis 570 PSI. In some examples, the pressure is 580 PSI. In yet otherexamples, the pressure is 590 PSI. In certain examples, the pressure is600 PSI. In other examples, the pressure is 610 PSI. In yet otherexamples, the pressure is 620 PSI. In some examples, the pressure is 630PSI. In other examples, the pressure is 640 PSI. In still others, thepressure is 650 PSI. In some other examples, the pressure is 660 PSI. Incertain examples, the pressure is 670 PSI. In yet other examples, thepressure is 680 PSI. In some examples, the pressure is 690 PSI. In yetother examples, the pressure is 700 PSI. In certain examples, thepressure is 710 PSI. In other examples, the pressure is 720 PSI. In yetother examples, the pressure is 730 PSI. In some other examples, thepressure is 740 PSI. In certain examples, the pressure is 750 PSI. Inyet other examples, the pressure is 760 PSI. In some examples, thepressure is 770 PSI. In yet other examples, the pressure is 780 PSI. Incertain examples, the pressure is 790 PSI. In other examples, thepressure is 800 PSI. In yet other examples, the pressure is 810 PSI.

In other examples, the pressure is 820 PSI. In certain aforementionedexamples, the pressure is 830 PSI. In still others, the pressure is 840PSI. In some other examples, the pressure is 850 PSI. In certainexamples, the pressure is 860 PSI. In yet other examples, the pressureis 870 PSI. In some examples, the pressure is 880 PSI. In yet otherexamples, the pressure is 890 PSI. In certain examples, the pressure is900 PSI. In other examples, the pressure is 910 PSI. In yet otherexamples, the pressure is 920 PSI. In some examples, the pressure is 930PSI. In other examples, the pressure is 940 PSI. In still others, thepressure is 950 PSI. In some other examples, the pressure is 960 PSI. Incertain examples, the pressure is 970 PSI. In yet other examples, thepressure is 980 PSI. In some examples, the pressure is 990 PSI. In yetother examples, the pressure is 1000 PSI.

In some examples, the garnet-based setter plates are useful forimparting beneficial surface properties to the sintered film. Thesebeneficial surface properties include flatness and conductivity usefulfor battery applications. These beneficial properties also includepreventing Li evaporation during sintering. These beneficial propertiesmay also include preferencing a particular garnet crystal structure.

In certain processes disclosed herein, the inert setter plates areselected from porous zirconia, graphite or conductive metal plates. Insome of these processes, the inert setter plates are porous zirconia. Insome other of these processes, the inert setter plates are graphite. Inyet other processes, the inert setter plates are conductive metalplates. Setter plates include, but are not limited to, the setter platesset forth in International Patent Application No. PCT/US2016/027886,entitled LITHIUM STUFFED GARNET SETTER PLATES FOR SOLID ELECTROLYTEFABRICATION, filed Apr. 15, 2016; also International Patent ApplicationNo. PCT/US2016/027922, entitled SETTER PLATES FOR SOLID ELECTROLYTEFABRICATION AND METHODS OF USING THE SAME TO PREPARE DENSE SOLIDELECTROLYTES, filed Apr. 15, 2016; also U.S. patent application Ser. No.15/286,509, entitled LITHIUM STUFFED GARNET SETTER PLATES FOR SOLIDELECTROLYTE FABRICATION, filed Oct. 5, 2016; also U.S. patentapplication Ser. No. 15/431,645, entitled SETTER PLATES FOR SOLIDELECTROLYTE FABRICATION AND METHODS OF USING THE SAME TO PREPARE DENSESOLID ELECTROLYTES, filed Feb. 13, 2017, the contents of each of whichare herein incorporated by reference in their entirety for all purposes.

In some examples, including any of the foregoing, the process includesstep (d) annealing the green film. In some examples, the annealingincludes any annealing method set forth in U.S. patent application Ser.No. 15/007,908, filed Jan. 27, 2016, entitled ANNEALED GARNETELECTROLYTE SEPARATORS, the contents of which are herein incorporated byreference in their entirety for all purposes.

In some examples, provided herein is a thin film made by a processdisclosed herein. In some other examples, provided herein is anelectrochemical device which includes a thin film made by a processdisclosed herein.

Also included herein is an electric vehicle that includes anyelectrochemical device described herein.

a. Milling & Calcining Processes

In some examples, the processes herein include providing chemicalprecursor to a lithium-stuffed garnet at a specified quantity anddensity. In certain examples, the chemical precursors are characterizedby, or milled to, a median particle size of about 100 nm to 10 μm. Insome examples, the median particle size is 800 nm to 2 μm.

In some examples, the processes herein include providing alithium-stuffed garnet at a specified quantity and density. In certainexamples, the powder is characterized by, or milled to, a medianparticle size of about 100 nm to 10 μm. In some examples, the medianparticle size is 800 nm to 2 μm.

As described herein, some processes include steps related to mixing and,or, process steps related to milling. Milling includes ball milling.Milling also includes milling processes that use inert solvents such as,but not limited to, ethanol, isopropanol, toluene, ethyl acetate, methylacetate, THF, MEK, DME, acetone, acetonitrile, or combinations thereof

In some examples, the milling is ball milling. In some examples, themilling is horizontal milling. In some examples, the milling is attritormilling. In some examples, the milling is immersion milling. In someexamples, the milling is high energy milling. In some examples, the highenergy milling process results in a milled particle size distributionwith d₅₀ of 10 nm. In some examples, the high energy milling processresults in a milled particle size distribution with d₅₀ of 10 μm. Insome examples, the high energy milling process results in a milledparticle size distribution with d₅₀ of 1 μm. In some examples, the highenergy milling process results in a milled particle size distributionwith d₅₀ of 100 nm. In some examples, the high energy milling processresults in a milled particle size distribution with d₅₀ of 100 μm. Insome examples, the milling is immersion milling.

In some examples, the milling includes high energy wet milling processwith 0.3 mm yttria stabilized zirconium oxide grinding media beads. Insome other examples, ball milling, horizontal milling, attritor milling,or immersion milling can be used. In some examples, using a high energymilling process produces a particle size distribution of about d₅₀˜100nm. In some examples, a milling process produces a particle sizedistribution with d₅₀ between 100-200 nm. In some examples, a millingprocess produces a particle size distribution with d₅₀ between 200-300nm. In some examples, a milling process produces a particle sizedistribution with d₅₀ between 300-400 nm. In some examples, a millingprocess produces a particle size distribution with d₅₀ between 400-500nm. In some examples, a milling process produces a particle sizedistribution with d₅₀ between 500-600 nm. In some examples, a millingprocess produces a particle size distribution with d₅₀ between 600-700nm. In some examples, a milling process produces a particle sizedistribution with d₅₀ between 700-800 nm. In some examples, a millingprocess produces a particle size distribution with d₅₀ between 800-900nm. In some examples, a milling process produces a particle sizedistribution with d₅₀ between 900-1000 nm.

In some examples, the mixture of chemical precursors to alithium-stuffed garnet is calcined at temperatures of 600° C., 650° C.,700° C., 750° C., 800° C., 850° C., 900° C., 950° C., 1000° C., 1050°C., 1100° C., 1150° C., 1200° C., 1250° C., 1300° C., 1350° C., 1400°C., or 1450° C. In some examples, the mixture of chemical precursors toa lithium-stuffed garnet is calcined at 800° C., 850° C., 900° C., 950°C., 1000° C., 1050° C., or 1100° C. In some examples, the mixture ofchemical precursors to a lithium-stuffed garnet is calcined at 800° C.In some examples, the mixture of chemical precursors to alithium-stuffed garnet is calcined at 850° C. In some examples, themixture of chemical precursors to a lithium-stuffed garnet is calcinedat 900° C. In some examples, the mixture of chemical precursors to alithium-stuffed garnet is calcined at 950° C. In some examples, themixture of chemical precursors to a lithium-stuffed garnet is calcinedat 1000° C. In some examples, the mixture of chemical precursors to alithium-stuffed garnet is calcined at 1050° C. In some examples, themixture of chemical precursors to a lithium-stuffed garnet is calcinedat 1100° C. In some of these examples, the mixture of chemicalprecursors to a lithium-stuffed garnet is calcined for 1, 2, 3, 4, 5, 6,7, 8, 9, or 10 hours. In some examples, the mixture is calcined for 4,5, 6, 7, or 8 hours. In some examples, the mixture of chemicalprecursors to a lithium-stuffed garnet is calcined for 4 hours. In someexamples, the mixture of chemical precursors to a lithium-stuffed garnetis calcined for 5 hours. In some examples, the mixture of chemicalprecursors to a lithium-stuffed garnet is calcined for 6 hours. In someexamples, the mixture of chemical precursors to a lithium-stuffed garnetis calcined for 7 hours. In some of these examples, the calcinationtemperature is achieved by a heating ramp rate of about 1° C./min, 2°C./min, 5° C./min, or about 10° C./min. In some of these examples, thecalcined mixture is then milled to break-up any agglomerates. In some ofthese examples, the calcined mixture is then milled to reduce the meanprimary particle size. In certain examples, the milled calcined mixtureis then sintered at temperatures of about 600° C., 650° C., 700° C.,750° C., 800° C., 850° C., 900° C., 950° C., 1000° C., 1050° C., 1100°C., 1150° C., 1200° C., 1250° C., 1300° C., 1350° C., 1400° C., or 1450°C. In some examples, the sintering is at temperatures of 1000° C., 1050°C., 1100° C., 1150° C., 1200° C., 1250° C., 1300° C., 1350° C., 1400°C., or 1450° C. In some examples, the sintering is at temperatures of1000° C., 1200° C., or 1400° C. In these examples, the sintering is for1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20,21, 22, 23, 24, 25, 26, 27, 28, 29, or 30 minutes. In some examples, thesintering is for 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, or 14 hours.

In some examples, the calcined powders (e.g., any of the aforementionedexamples of calcined lithium-stuffed garnet) are provided in a slurrywith solvents and additional components such as binders and dispersants.In some examples, the slurry is then cast onto a substrate to form afilm having a thickness between about 10 nm and about 250 nm. This filmis referred to as a green film. In some examples, the casting onto asubstrate is accomplished through slot casting, doctor blade casting, orby dip coating a substrate into the flux. The slurry is then dried toremove the solvent. In some examples, the heating is accomplished at 1°C./min and to a temperature of about 200° C., or about 250° C., or about300° C., or about 350° C., or about 350° C., or about 400° C., or about450° C., or about 500° C. The dried, unsintered slurry is referred toherein as a green film.

In some examples, positive electrode active materials are mixed withgarnet powders and also flux components to form a mixture. This mixturecan be deposited onto one, two, or more sides of a current collector.Once the flux is processed, as set forth herein, and eventually removed,an intimate mixture of garnet materials and active materials remain indirect contact with a current collector.

In any of these examples, the substrate, e.g., current collector, can becoated with a garnet material optionally including a positive electrodeactive material by dip coating the substrate into a flux having thegarnet, garnet precursors, active material, or combinations thereof. Inany of these examples, the substrate, e.g., current collector, can becoated with a garnet material optionally including a positive electrodeactive material by casting the flux having the garnet, garnetprecursors, active material, or combinations thereof onto the substrate.In these examples, casting can be doctor blade casting. In theseexamples, casting can be slot casting. In these examples, casting can bedip coating.

Additional details, examples, and embodiments of these processes ofmaking garnet materials is found, for example, in International PCTPatent Application No. PCT/US2014/059578, entitled GARNET MATERIALS FORLI SECONDARY BATTERIES, filed Oct. 7, 2014, or in International PCTPatent Application No. PCT/US2014/059575, entitled GARNET MATERIALS FORLI SECONDARY BATTERIES, also filed Oct. 7, 2014, the contents of each ofwhich are herein incorporated by reference in their entirety for allpurposes.

In some examples precursors are, optionally milled and, mixed with aflux (step a) and heated to dissolve the precursors in the flux (stepb). The flux with dissolved precursors is cast (step c) and calcined(step d) to react the precursors and for larger and more crystallineparticles (step e) which are densified by the flux. In some examples,the flux is removed (step f).

b. Fluxes

In some examples, set forth herein is a process that includes a mixtureof chemical precursors to a lithium-stuffed garnet powder or film,wherein one or more flux materials, having a melting point lower than400° C. is used to mix, dissolve, and, or, density the ceramic onto oraround a substrate.

In some examples, a mixture of chemical precursors to a lithium-stuffedgarnet is mixed with two or more flux materials at a temperature of lessthan 400° C. to form a fluxed powder material. This fluxed powdermaterial is shaped and heated again at a temperature less than 400° C.to form a dense lithium conducting material.

In some examples, the processes herein include providing a mixture ofchemical precursors to a lithium-stuffed garnet at a specified quantityand density. In certain examples, the mixture is characterized by, ormilled to, a median particle size of about 100 nm to 10 μm. In someexamples, the median particle size is 800 nm to 2 μm. In some of theseexamples, a flux material is provided at a second specified quantity anddensity. In certain examples, the secondly provided flux material isless than 51% (w/w) of the mixture. This flux material is typically alithium-containing material which melts between about 500° C. to 900° C.Additional flux materials may also be provided in the reaction mixture.In some examples, the powders and flux materials, in variouscombinations, are mixed to form eutectic mixtures. In some of theseexamples, the eutectic mixtures have a melting point less than 500° C.In some further examples, the eutectic mixtures are heated totemperature of about 400 to 800° C. In some examples, the heatedmixtures are mixed. In still other examples, the mixtures are thenheated and formed into shapes, such as but not limited to, sheets, thickfilms (greater than 100 μm thick), thin films (less than 100 μm thick)rolls, spheres, discs, sheets, pellets, and cylinders. Following areaction time and, or, additional heating, the powders and fluxmaterials are optionally cooled. In some examples, the flux is separatedor removed from the products formed therein using a solvent such as, butnot limited to, water, acetone, ethanol, THF, IPA, toluene, orcombinations thereof. In some examples, the additional heating is totemperatures less than 500° C. This method, and variants thereof, resultin dense lithium conducting ceramic powders, which are often 20% moredense than the starting density of the reactants and, or, fluxes. Incertain examples, the powders and flux materials include, but are notlimited to, formed garnets, such as Li₇La₃Zr₂O₁₂, and oxides, such asLiOH, La₂O₃, ZrO₂. In certain examples, the garnet powders are formed bymixing garnet precursors such as, but not limited to, LiOH, Li₂CO₃,La₂O₃, ZrO₂, Nb₂O₅, boehmite, gibbsite, bayerite, doyleite,nordstrandite, bauxite, corundum, Al₂O₃, Al-nitrate, or combinationsthereof

c. Solutions and Slurries

In some examples, the processes herein include the use of solutions andslurries which are cast or deposited onto substrates. In certainexamples, garnet precursors in the slurries are milled according to themilling processes set forth herein. In some examples, these precursorsare formulated into a slurry. In some examples, these milled precursorsare formulated into a slurry. After milling, in some examples, theprecursors are formulated into coating formulations, e.g., slurries withbinders and solvents. These slurries and formulations solvents, binders,dispersants, and surfactants. In some examples, the binder polyvinylbutyral (PVB) and the solvent is toluene and/or ethanol and/or diacetonealcohol. In some examples, PVB is both a binder and a dispersant. Insome examples, the binders also include PVB, PVP, Ethyl Cellulose,Celluloses, acetate, PVA, and PVDF. In some examples, the dispersantsinclude surfactants, fish oil, fluorosurfactants, Triton, oleyl alcohol,oleic acid, oleyl amine, PVB, and PVP. In some slurries, 10% to 60% byweight (w/w) of the slurry is solid precursors. Binders and dispersantscan each, in some slurries, make up 50% w/w of the slurry, with solventscomprising the remainder weight percentages.

In some examples, the solvent is selected from MEK, DME, toluene,ethanol, toluene:ethanol, or combinations thereof. In certainembodiments disclosed herein, the binder is polyvinyl butyral (PVB). Incertain embodiments disclosed herein, the binder is polypropylenecarbonate. In certain embodiments disclosed herein, the binder is apolymethylmethacrylate.

In some examples, the solvent is toluene, ethanol, toluene:ethanol, orcombinations thereof. In some examples, the binder is polyvinyl butyral(PVB). In other examples, the binder is polypropylene carbonate. In yetother examples, the binder is a polymethylmethacrylate.

In some embodiments disclosed herein, the removing the solvent includesevaporating the solvent. In some of these embodiments, the removing thesolvent includes heating the film. In some embodiments, the removingincludes using a reduced atmosphere. In still other embodiments, theremoving includes using a vacuum to drive off the solvent. In yet otherembodiments, the removing includes heating the film and using a vacuumto drive off the solvent.

In some examples, the slurries set forth herein are deposited ontosubstrates using casting techniques including slot die coating, slotcasting, doctor blade casting, mold casting, roll coating, gravure,microgravure, screen printing, flexoprinting, and/or other relatedprocesses.

Other casting processes are set forth in International PCT PatentApplication No. PCT/US2014/059578, entitled GARNET MATERIALS FOR LISECONDARY BATTERIES, filed Oct. 7, 2014, or in International PCT PatentApplication No. PCT/US2014/059575, entitled GARNET MATERIALS FOR LISECONDARY BATTERIES, also filed Oct. 7, 2014, the entire contents ofeach of which are incorporated by reference herein for all purposes intheir entirety.

In some examples, the slurries of garnet precursors, set forth here, arelayered, deposited, or laminated to uncalcined green films oflithium-stuffed garnets in order to build up several layers oflithium-stuffed garnets. In some examples, a slurry is deposited bydoctor-blading and then then deposited slurry is allowed to dry. Oncedry, another layer of slurry is deposited onto the dried first depositedslurry. In some examples, slurries of garnet precursors, set forthbelow, are layered, deposited, or laminated to calcined films oflithium-stuffed garnets in order to infiltrate vacant or porous spacewithin uncalcined lithium-stuffed garnets. These dried slurries arereferred to as green films.

In some examples, the green films also include at least one memberselected from a binder, a solvent, a dispersant, or combinationsthereof. In some examples, the garnet solid loading is at least 30% byweight (w/w). In some examples, the film thickness is less than 100 nm.

In certain examples, the dispersants are BYK-R™ 607, Rhodaline,DISPERBYK-2013™, BYK-300™, BYK-081™, SOLSPERSE™ M387, fish oil and Oleylalcohol.

In some examples, the films include a substrate adhered thereto. Incertain examples, the substrate is a polymer, a metal foil, or a metalpowder. In some of these examples, the substrate is a metal foil. Insome examples, the substrate is a metal powder. In some of theseexamples, the metal is selected from Ni, Cu, Al, steel, alloys, orcombinations thereof.

In some examples, the solid loading in the green film is at least 35 %w/w. Herein, solid loading refers to the amount of inorganic materialwhich will remain in a film once the solvents, volatile components, andorganic components are removed from the film through evaporation,calcination processes, or sintering processes, or any combinationthereof. In some examples, the green films have a solid loading of atleast 40% w/w. In some examples, the green films have a solid loading ofat least 45% w/w. In some examples, the green films have a solid loadingof at least 50% w/w. In other examples, the solid loading is at least55% w/w. In some other examples, the solid loading is at least 60% w/w.In some examples, the solid loading is at least 65% w/w. In some otherexamples, the solid loading is at least 70% w/w. In certain otherexamples, the solid loading is at least 75% w/w. In some examples, thesolid loading is at least 80% w/w.

In some examples, the uncalcined green films have a film thickness lessthan 75 μm and greater than 10 nm. In some examples, the uncalcinedgreen films have a thickness less than 50 μm and greater than 10 nm. Insome examples, the uncalcined green films have particles with a d₅₀ ofless than 1 μm at the particle maximum physical dimension. In someexamples, the uncalcined green films have a median grain size of between0.1 μm to 10 μm. In some examples, the uncalcined green films is notadhered to any substrate.

The uncalcined green films set forth herein may be calcined by heatingthe green films to about 200° C. to 1200° C. for about 20 minutes to 10hours or until crystallization occurs.

In some examples, the green films are unsintered and are centimeters inlength.

In some examples, the green films are unsintered and are meters inlength.

In some examples, the green films are unsintered and are kilometers inlength.

In an embodiment, the disclosure sets forth herein a process includingproviding an unsintered thin film; wherein the unsintered thin filmcomprises at least one member selected from the group consisting of aGarnet-type electrolyte, an active electrode material, a conductiveadditive, a solvent, a binder, and combinations thereof; removing thesolvent, if present in the unsintered thin film; optionally laminatingthe film to a surface; removing the binder, if present in the film;sintering the film, wherein sintering comprises heat sintering or fieldassisted sintering (FAST); wherein heat sintering includes heating thefilm in the range from about 700° C. to about 1200° C. for about 1 toabout 600 minutes and in atmosphere having an oxygen partial pressurebetween 10⁻¹ atm to 10⁻¹⁵ atm; and wherein FAST sintering includesheating the film in the range from about 500° C. to about 900° C. andapplying a D.C. or A.C. electric field to the thin film.

In some of the processes disclosed herein, the unsintered thin film hasa thickness from about 10 μm to about 100 μm. In some other of theprocesses disclosed herein, the unsintered thin film has a thicknessfrom about 20 μm to about 100 μm. In certain of the processes disclosedherein, the unsintered thin film has a thickness from about 30 μm toabout 100 μm. In certain other of the processes disclosed herein, theunsintered thin film has a thickness from about 40 μm to about 100 μm.In yet other processes disclosed herein, the unsintered thin film has athickness from about 50 μm to about 100 μm. In still other processesdisclosed herein, the unsintered thin film has a thickness from about 60μm to about 100 μm. In yet some other processes disclosed herein, theunsintered thin film has a thickness from about 70 μm to about 100 μm.In some of the processes disclosed herein, the unsintered thin film hasa thickness from about 80 μm to about 100 μm. In some other of theprocesses disclosed herein, the unsintered thin film has a thicknessfrom about 90 μm to about 100 μm.

In some of the processes disclosed herein, the unsintered thin film hasa thickness from about 10 μm to about 90 μm. In some other of theprocesses disclosed herein, the unsintered thin film has a thicknessfrom about 20 μm to about 80 μm. In certain of the processes disclosedherein, the unsintered thin film has a thickness from about 30 μm toabout 70 μm. In certain other of the processes disclosed herein, theunsintered thin film has a thickness from about 40 μm to about 60 μm. Inyet other processes disclosed herein, the unsintered thin film has athickness from about 50 μm to about 90 μm. In still other processesdisclosed herein, the unsintered thin film has a thickness from about 60μm to about 90 μm. In yet some other processes disclosed herein, theunsintered thin film has a thickness from about 70 μm to about 90 μm. Insome of the processes disclosed herein, the unsintered thin film has athickness from about 80 μm to about 90 μm. In some other of theprocesses disclosed herein, the unsintered thin film has a thicknessfrom about 30 μm to about 60 μm.

In some examples, the unsintered films are about 50 percent larger byvolume than the sintered films. In some examples, the sintered filmshave a thickness of about 1-150 μm. In some of these examples, thesintered film has a thickness of about 1 μm. In some other examples thesintered film has a thickness of about 2 μm. In certain examples, thesintered film has a thickness of about 3 μm. In certain other examples,the sintered film has a thickness of about 4 μm. In some other examples,the sintered film has a thickness of about 5 μm. In some examples, thesintered film has a thickness of about 6 μm. In some of these examples,the sintered film has a thickness of about 7 μm. In some examples, thesintered film has a thickness of about 8 μm. In some other examples, thesintered film has a thickness of about 9 μm. In certain examples, thesintered film has a thickness of about 10 μm.

d. Making Certain Compositions

In some examples, provided herein are processes for making alithium-stuffed garnet doped with aluminum, the processes comprisingproviding garnet precursors at predetermined combination. In someexamples, the processes further include milling the combination for 5 to10 hours. In other examples, the processes further comprising calciningthe combination in vessels at about 500° C. to about 1200° C. for about4 to about 10 hours to form a garnet. In other examples, the processesfurther include milling the formed garnet until the d₅₀ particle size isbetween 200 and 400 nm. In still other examples, the processes furtherinclude mixing the milled forming garnet with a binder to form a slurry.In some of these examples, before the slurry is sintered, the processesinclude providing a green film by casting the slurry as a film. In otherexamples, the processes further include filtering the slurry. In stillother examples, the processes further include optionally providingpellets of filtered slurry. In some of these examples, before the slurryis sintered, the processes include providing a green film by casting theslurry. In still other examples, the processes further include sinteringthe filtered slurry. In the examples, wherein the slurry is sintered,sintering includes applying pressure to the slurry with setting plates,heating the slurry under flowing inert gas between 140° C. and 400° C.for about 1 to about 6 hours, and either heat sintering or fieldassisted sintering for about 10 minutes to about 10 hours.

In certain examples, the garnet precursors are selected from LiOH,La₂O₃, ZrO₂ and Al(NO₃)₃.9H₂O.

In some examples, the garnet precursors are calcined in vessels is at900° C. for 6 hours. In certain examples, the vessels are Alumina (i.e.,A1₂0₃) vessels.

In certain examples, the milling is until the d₅₀ particle size of theformed garnet is about 300 nm. In certain other examples, the milling isconducted until the d₅₀ particle size of the formed garnet is about 100nm. In some examples, the milling is conducted until the d₅₀ particlesize of the formed garnet is about 200 nm. In certain examples, themilling is conducted until the d₅₀ particle size of the formed garnet isabout 250 nm. In certain examples, the is conducted until the d₅₀particle size of the formed garnet is about 350 nm. In certain examples,the milling is conducted until the d₅₀ particle size of the formedgarnet is about 400 nm.

In some examples, the mixing the milled forming garnet with a binder toform a slurry includes about 4% w/w binder. In some examples, the binderis polyvinyl butyral.

In some examples, the filtering the slurry includes filtering with an80-mesh sieve. In some examples, the filtering the slurry includesfiltering with a 100-mesh sieve. In some examples, the filtering theslurry includes filtering with a 120-mesh sieve. In some examples, thefiltering the slurry includes filtering with a 140-mesh sieve. In someexamples, the filtering the slurry includes filtering with a 170-meshsieve. In some examples, the filtering the slurry includes filteringwith a 200-mesh sieve.

In some examples, provided herein are pellets of filtered, dried slurrythat are 13 mm in diameter. In some examples, the pellets have a 10 mm,11 mm, 12 mm, 13 mm, 14 mm, 15 mm, 16 mm, 17 mm, 18 mm, 19 mm, or 20 mmdiameter.

In some examples, the applying pressure to the pellet with settingplates includes applying a pressure of 3 metric tons. In some otherexamples, the applying pressure to the pellet with setting platesincludes applying a pressure of 2 metric tons. In some examples, theapplying pressure to the pellet with setting plates includes applying apressure of 1 metric tons. In some examples, the applying pressure tothe pellet with setting plates includes applying a pressure of 3.5metric tons.

In some examples, the setter plates are Pt setter plates. In otherexamples, the setter plates are garnet setter plates. In certainexamples, the setter plates are porous setter plates. In yet otherexamples, the setter plates are porous garnet setter plates. In yetother examples, the setter plates are porous zirconia setter plates.

In some examples, the processes include flowing inert gas as an Argongas flowing at a flow rate of 315 sccm.

In some examples, the processes set forth herein include heating theslurry under flowing inert gas including separate dwells at 100-200° C.and 300-400° C. for 2 hours (hrs) each under a humidified Argon flow.

e. Making Fine Grain Lithium-Stuffed Garnets

In some examples, provided herein are processes of making thin filmswith fine grains of lithium-stuffed garnets doped with alumina. In someexamples, in order to make these fine grains, the films described hereinare heat sintered at a maximum temperature of 1150° C. In some examples,in order to make these fine grains, the films described herein are heatsintered at a maximum temperature of 1150° C. for no more than 6 hours.In some examples, in order to make these fine grains, the filmsdescribed herein are heat sintered at a maximum temperature of 1075° C.In some examples, in order to make these fine grains, the filmsdescribed herein are heat sintered at a maximum temperature of 1075° C.for no more than 6 hours. In certain examples, when the films are onlysintered for 15 minutes, heat sintering temperatures of 1200° C., at amaximum, are used.

Grains grow larger as temperature is increased. Also, grains grow largerat a given temperature while the dwell time at that temperature isincreased. For this reason, the processes set forth herein include heatsintering at temperatures less than 1200° C., or less than 1150° C., orless than 1075° C. In some of these examples, the processes set forthherein include heat sintering at these temperatures for no more than 6hours. In some examples, the processes set forth herein include heatingsintering for no more than 15 minutes. In some other examples, theprocesses set forth herein include heat sintering at 1050° C. In someother examples, the processes set forth herein include heat sintering at1000° C. In some other examples, the processes set forth herein includeheat sintering at 950° C. In some other examples, the processes setforth herein include heat sintering at 900° C. In some other examples,the processes set forth herein include heat sintering at 850° C. In someother examples, the processes set forth herein include heat sintering at800° C. In some other examples, the processes set forth herein includeheat sintering at 750° C. In some other examples, the processes setforth herein include heat sintering at 700° C. In some other examples,the processes set forth herein include heat sintering at 650° C. In someother examples, the processes set forth herein include heat sintering at600° C. In some other examples, the processes set forth herein includeheat sintering at 550° C. In some other examples, the processes setforth herein include heat sintering at 500° C.

In some examples, smaller amounts of Li in the lithium-stuffed garnetlead to smaller grains in the films set forth herein

f. Sintering Processes

While certain solid-state ionic conductors can be sintered in aconventional process by pressing small pellets, which are approximately10 mm in diameter and 2 mm thick in thickness, known processes formaking thin films of garnet based materials are insufficient for batteryapplications, which require film dimensions of approximately 10 cm, andwhich are 100 nm to 50 μm in thickness.

Sintering thin films, particularly films that include garnet (e.g.,lithium-stuffed garnet), using applied electrical currents and voltagesis inherently challenging. In part, this is related to the resistiveheating that occurs in the garnet material when current flowsthere-through and thereby causes a sintering effect. For example, whenelectricity is used to sinter garnet, as is done with FAST sintering,the electricity resistively heats and sinters the garnet materialprimarily where the impedance is the greatest. As the garnet is sinteredand the impedance decreases, the resistive heat associated with anelectrical current passing through the garnet also decreases. As theimpedance decreases in certain portions of the garnet material, thepassed electrical current primarily takes the path of least resistance(i.e., the path where the impedance is lowest) and does not resistivelyheat the unsintered portions of the garnet where the impedance issignificantly higher. As more garnet sinters, and the impedancedecreases, it becomes more difficult to sinter the remaining unsinteredportions of the garnet and particularly so where the impedance isgreatest due to the garnet portions where the impedance is smallest.

In order to overcome this challenge, a cylindrical form factor may beused. By directing an applied electrical current between electrodesspaced at the extreme longitudinal ends of a cylinder, the cylindricalform factor overcomes the aforementioned challenges since the electricalcurrent passes through the longest portion of the sintering material.However, for several of the applications considered herein and with theinstant patent application, a form factors that is a thin film isrequired. In some examples, this form factor is rectangular with respectto its shape. In some other examples, this form factor isrectangular-like with respect to its shape. These films, thin films, andrectangular-like form factors are difficult to sinter in part becausethe electrodes, through which an electrical current is applied, do nottransmit electricity through the longest portion of the film sample. Forthin films, the applied electrical current passes through thez-direction of the film, which is one of the shorter paths through thebulk of the material.

In addition to the aforementioned challenges, for many applications itis preferable that the thin film densify primarily in the z-directionand not in the x- or y-directions. This means that the shrinkage of thefilm is primarily in the z-direction and more so than in either the x-or the y-direction. Accomplishing this type of densification andshrinkage is also a challenge met by the instant application. Thepresent application sets forth several sintering processes forovercoming these and other sintering challenges.

An example sintering processes includes placing electrodes on a thinfilm form factor so that an applied electrical current passes throughthe z-direction of the film. In this orientation, FAST sintering isemployed according to a sintering processes set forth herein.

Another example sintering process includes using sintering plates. Insome examples, the applied electrical current passes through thesintering plates. In some other examples, the applied electrical currentpasses through the sintering plates while a pressure is appliedaccording to the pressure values recited in this application herein andabove. In certain other examples, the applied electrical current isapplied directly to the thin film while the setter plates independentlyapply a pressure according to a pressure value recited in thisapplication, herein and above. In yet certain other examples, one ormore metal foil layers are inserted between a setter plate and the thinfilm and the applied electrical current is applied to the inserted metalfoil.

In some examples, a metal powder is inserted between the setter platesand the garnet film to be sintered. In some of these examples, as thegarnet film is sintered, the metal powder also sinters and adheres tothe sintering film.

In some of these examples, the setter plate is a porous setter plate. Insome of these examples, the setter plate is a garnet-based setter plate.In some of these examples, the setter plate is a porous garnet-basedsetter plate. In some of these examples, the setter plate is a metallicsetter plate. As used herein, garnet-based setter plates include asetter plate that comprises a garnet material described herein.

In some examples, the plates used for sintering and optionally forapplying pressure can have individually addressable contact points sothat the applied electrical current is directed to specific positions onthe sintering film. The tapered ended of the plurality of trapezoid-likeshapes (100) indicates these individually addressable contacts points.As used herein, individually addressable refers to the ability tocontrollable and individually apply a current or a voltage to onecontact point that may be different from the controllably appliedcurrent or voltage applied to another contact point.

In some examples, the plates used for sintering and optionally forapplying pressure can have grid structure. In some examples, this gridstructure is movable so that it can be placed on the sintering film atdifferent positions during the sintering process.

In some examples, the thin film form factor is sintered while it movesthrough calender rollers. In these examples, the calender rollers applya pressure according to a pressure value set forth herein and alsoprovide a conduit for an applied electrical current or voltage asnecessary for sintering, e.g., FAST sintering. The larger arrow, whichis not surrounded by a circle and is parallel to the x-direction of thefilm, indicates the direction of movement of the sintering film as itmoves through the calender rollers.

In some of the examples, where a thin film form factor is sintered whileit moves through calender rollers, the calender rollers haveindividually addressable contact points (200) so that an electricalcurrent or voltage can be applied controllably and individually to thesintering film at different positions.

In some of the examples where a thin film form factor is sintered whileit moves through calender rollers, one of the calender rollers is aground electrode.

In some of the examples wherein a thin film form factor is sinteredwhile it moves through calender rollers, one of the calender rollers isa spiral design that can rotate about its longitudinal axis and alsomove parallel to its longitudinal axis. This spiral design allows forthe applied electrical current or voltage to be directed to thesintering film.

i. Reactive Sintering

In some examples, the set forth herein are reactive sintering processes.In these examples, garnet precursors are mixed to form a mixture. Inthese examples, the precursors include the garnet precursors set forthin the instant patent application. In some examples, the mixture ismilled according to the milling processes set forth in the instantpatent application. In some examples, the mixture is formulated as aslurry of milled precursor materials to form a slurry. In some examples,the slurry is then coated onto a substrate by processes such as, but notlimited to, doctor blade casting, slot casting, or dip coating. In someother examples, the slurry is cast onto a substrate according to acasting process set forth in the instant patent application. In some ofthese examples, the slurry is then dried to remove the solvent or liquidtherein. In some examples, the dried slurry is calendered. In someadditional examples, the dried slurry is laminated to other layers ofbattery components. In some of these examples, pressure is applied toadhere or bond the laminated layers together. In certain examples, thedried slurry layers to which pressure is applied are sintered accordingto the processes set forth herein. In those examples, wherein sinteringoccurs with garnet precursors in a slurry or dried slurry format, thesintering occurs simultaneous with a chemical reaction of the garnetprecursors to form sintered garnet.

ii. Hot Pressing

In some examples, set forth herein are hot pressing processes of makingthin garnet films. In these examples, green tapes, as described above,are sintered under an applied uniaxial pressure. In certain examples,the binder is first removed before the sintering is conducted. In theseparticular examples, the binder can be removed by burning the binder ata temperature of about 200, 300, 400, 500, or 600° C. In some examples,the sintering is conducted by heating the film to sintering temperatureof about 800° C. to about 1200° C. under an uniaxial load pressure ofabout 10 to about 100 MPa. In these examples, the applied pressureprevents the film from deforming or warping during sintering andprovides an additional driving force for sintering in the directionperpendicular to the film surface and for preparing a dense film.

In some examples, the green film can be sintered by first casting thefilm onto a metal foil. In some examples, the binder is burned outbefore the sintering is conducted. In some of these examples, thesintering includes heating the film under an applied pressure to atemperature lower than the melting point of the metal or metalscomprising the metal foil substrate. As such, higher sinteringtemperatures can be used when Ni-substrates are used as compared to whenCu-substrates are used.

iii. Constrained Sintering

In some examples, the green film may be sintered by placing it betweensetter plates but only applied a small amount of pressure to constrainthe film and prevent inhomogeneities that stress and warp the filmduring the sintering process. In some of these examples, it isbeneficial to make the setter plates that are porous, e. g. , porousyttria-stabilized zirconia. These porous plates in these examples allowthe binder to diffuse away from the film during the burning out or thesintering step. In some of these examples, the burning out and sinteringstep can be accomplished simultaneously in part because of these poroussetter plates. In some examples, the small amount of pressure is justthe pressure applied by the weight of the setter plate resting on top ofthe green film during the sintering process with no additional pressureapplied externally.

iv. Vacuum Sintering

In some examples, the sintering is conducted as described above but withthe sintering film in a vacuum chamber. In this example, a vacuum isprovided to withdraw gases trapped within the ceramic that is sintering.In some of these examples, gases trapped within the ceramic prevent theceramic from further sintering by applying a pressure within pore spaceswhich can be prevent the sintering ceramic from densifying beyond acertain point. By removing trapped gases using a vacuum system, poresthat did contain gas can be sintered and densified more so than theycould if the vacuum system did not withdraw the trapped gases.

v. Field Assisted, Flash, and Fast Sintering

The field assisted sintering technique (FAST) sintering is capable ofenhancing sintering kinetics. The application of a field will moveelectrons, holes, and/or ions in the sintering material, which then heatthe material via Joule heating. The heating is focused at spots whereresistance is highest (P=I²R, wherein I is current, and R is resistance)which tend to be at the particle-particle necks. These spots areprecisely where sintering is desired, so FAST sintering can beespecially effective. A standard garnet sintering procedure can, in someexamples, take 6-36 hours at 1050-1200° C. In contrast, FAST sinteringof garnets can occur at 600° C. and less than 5 minutes. The advantagesare lower cost processing (higher throughput), lower reactivity (atlower temperature, the garnet is less likely to react with othercomponents), and lower lithium loss (lithium evaporation is a dominantfailure mode preventing effective sintering). FAST sintering of garnetsis most effective at low current and for short time. Since garnetmaterial has high ion conductivity, low current is preferable, as is ACcurrent, so that bulk transport of ions does not occur. Parameters mayspan: 1 min<time<1 hr, 500<temp<1050° C., 1 Hz<frequency<1 MHz, 1V<VACrms<20V. In some examples, FAST sintering is used in conjunction withhot pressing, which includes applying a uniaxial pressure to the filmduring sintering. In some examples, FAST sintering is used inconjunction with hot pressing onto a permanent substrate, such as ametal, e.g., a current collector. In some examples, FAST sintering isused in conjunction with constrained sintering, in which the film ispinned, or constrained physically, but without a significant amount ofpressure. In some examples, FAST sintering is used in conjunction withbilayer sintering (and tri-layer sintering, e.g.,electrolyte-metal-electrolyte), to both provide mechanical support andto simultaneously form a current collector in one step. In someexamples, FAST sintering is used in conjunction with vacuum sintering,in which sintering occurs in a low absolute pressure to promote poreremoval.

In some embodiments, disclosed herein is a process of making thin films,including providing an unsintered thin film; wherein the unsintered thinfilm includes at least one member selected from the group consisting ofa Garnet-type electrolyte, an active electrode material, a conductiveadditive, a solvent, a binder, and combinations thereof. In someexamples, the processes further include removing the solvent, if presentin the unsintered thin film. In some examples, the process optionallyincludes laminating the film to a surface. In some examples, the processincludes removing the binder, if present in the film. In some examples,the process includes sintering the film, wherein sintering comprisesheat sintering or field assisted sintering (FAST). In some of theseexamples, heat sintering includes heating the film in the range fromabout 700° C. to about 1200° C. for about 1 to about 600 minutes and inatmosphere having an oxygen partial pressure in the range 1*10⁻¹ to1*10⁻¹⁵ atm. In other examples, FAST sintering includes heating the filmin the range from about 500° C. to about 900° C. and applying a D.C. orA.C. electric field to the thin film.

In some embodiments, disclosed herein is a process of making a film,including providing an unsintered thin film; wherein the unsintered thinfilm includes at least one member selected from the group consisting ofa Garnet-type electrolyte, an active electrode (e.g., cathode) material,a conductive additive, a solvent, a binder, and combinations thereof. Insome examples, the processes further include removing the solvent, ifpresent in the unsintered thin film. In some examples, the processoptionally includes laminating the film to a surface. In some examples,the process includes removing the binder, if present in the film. Insome examples, the process includes sintering the film, whereinsintering comprises heat sintering. In some of these examples, heatsintering includes heating the film in the range from about 700° C. toabout 1200° C. for about 1 to about 600 minutes and in atmosphere havingan oxygen partial pressure in the range of 1*10¹ atm to 1*10⁻¹⁵ atm.

In some embodiments, disclosed herein is a process of making a film,including providing an unsintered thin film; wherein the unsintered thinfilm includes at least one member selected from the group consisting ofa Garnet-type electrolyte, an active electrode material, a conductiveadditive, a solvent, a binder, and combinations thereof. In someexamples, the processes further include removing the solvent, if presentin the unsintered thin film. In some examples, the process optionallyincludes laminating the film to a surface. In some examples, the processincludes removing the binder, if present in the film. In some examples,the process includes sintering the film, wherein sintering includesfield assisted sintering (FAST). In some of these examples, FASTsintering includes heating the film in the range from about 500° C. toabout 900° C. and applying a D.C. or A.C. electric field to the thinfilm.

In any of the processes set forth herein, the unsintered thin film mayinclude a lithium-stuffed garnet electrolyte or precursors thereto. Inany of the processes set forth herein, the unsintered thin film mayinclude a lithium-stuffed garnet electrolyte doped with alumina.

In any of the processes set forth herein, heat sintering may includeheating the film in the range from about 400° C. to about 1200° C.; orabout 500° C. to about 1200° C.; or about 900° C. to about 1200° C.; orabout 1000° C. to about 1200° C.; or about 1100° C. to about 1200° C.

In any of the processes set forth herein, the processes may includeheating the film for about 1 to about 600 minutes. In any of theprocesses set forth herein, the processes may include heating the filmfor about 20 to about 600 minutes. In any of the processes set forthherein, the processes may include heating the film for about 30 to about600 minutes. In any of the processes set forth herein, the processes mayinclude heating the film for about 40 to about 600 minutes. In any ofthe processes set forth herein, the processes may include heating thefilm for about 50 to about 600 minutes. In any of the processes setforth herein, the processes may include heating the film for about 60 toabout 600 minutes. In any of the processes set forth herein, theprocesses may include heating the film for about 70 to about 600minutes. In any of the processes set forth herein, the processes mayinclude heating the film for about 80 to about 600 minutes. In any ofthe processes set forth herein, the processes may include heating thefilm for about 90 to about 600 minutes. In any of the processes setforth herein, the processes may include heating the film for about 100to about 600 minutes. In any of the processes set forth herein, theprocesses may include heating the film for about 120 to about 600minutes. In any of the processes set forth herein, the processes mayinclude heating the film for about 140 to about 600 minutes. In any ofthe processes set forth herein, the processes may include heating thefilm for about 160 to about 600 minutes. In any of the processes setforth herein, the processes may include heating the film for about 180to about 600 minutes. In any of the processes set forth herein, theprocesses may include heating the film for about 200 to about 600minutes. In any of the processes set forth herein, the processes mayinclude heating the film for about 300 to about 600 minutes. In any ofthe processes set forth herein, the processes may include heating thefilm for about 350 to about 600 minutes. In any of the processes setforth herein, the processes may include heating the film for about 400to about 600 minutes. In any of the processes set forth herein, theprocesses may include heating the film for about 450 to about 600minutes. In any of the processes set forth herein, the processes mayinclude heating the film for about 500 to about 600 minutes. In any ofthe processes set forth herein, the processes may include heating thefilm for about 1 to about 500 minutes. In any of the processes set forthherein, the processes may include heating the film for about 1 to about400 minutes. In any of the processes set forth herein, the processes mayinclude heating the film for about 1 to about 300 minutes. In any of theprocesses set forth herein, the processes may include heating the filmfor about 1 to about 200 minutes. In any of the processes set forthherein, the processes may include heating the film for about 1 to about100 minutes. In any of the processes set forth herein, the processes mayinclude heating the film for about 1 to about 50 minutes.

In any of the processes set forth herein, the FAST sintering may includeheating the film in the range from about 400° C. to about 1200° C. andapplying a D.C. or A.C. electric field to the thin film. In someexamples, FAST sintering includes heating the film in the range fromabout 400° C. to about 900° C. and applying a D.C. or A.C. electricfield to the thin film. In some examples, FAST sintering includesheating the film in the range from about 600° C. to about 1150° C. andapplying a D.C. or A.C. electric field to the thin film. In someexamples, FAST sintering includes heating the film in the range fromabout 700° C. to about 900° C. and applying a D.C. or A.C. electricfield to the thin film. In some examples, FAST sintering includesheating the film in the range from about 800° C. to about 900° C. andapplying a D.C. or A.C. electric field to the thin film. In someexamples, FAST sintering includes heating the film in the range fromabout 500° C. to about 800° C. and applying a D.C. or A.C. electricfield to the thin film. In some examples, FAST sintering includesheating the film in the range from about 500° C. to about 700° C. andapplying a D.C. or A.C. electric field to the thin film. In someexamples, FAST sintering includes heating the film in the range fromabout 500° C. to about 600° C. and applying a D.C. or A.C. electricfield to the thin film.

In any of the processes set forth herein, the FAST sintering may includeheating the film in the range from about 400° C. to about 1000° C. andapplying a D.C. electric field to the thin film. In some examples, FASTsintering includes heating the film in the range from about 600° C. toabout 900° C. and applying a D.C. electric field to the thin film. Insome examples, FAST sintering includes heating the film in the rangefrom about 600° C. to about 900° C. and applying a D.C. electric fieldto the thin film. In some examples, FAST sintering includes heating thefilm in the range from about 700° C. to about 900° C. and applying aD.C. electric field to the thin film. In some examples, FAST sinteringincludes heating the film in the range from about 800° C. to about 900°C. and applying a D.C. electric field to the thin film. In someexamples, FAST sintering includes heating the film in the range fromabout 500° C. to about 800° C. and applying a D.C. electric field to thethin film. In some examples, FAST sintering includes heating the film inthe range from about 500° C. to about 700° C. and applying a D.C.electric field to the thin film. In some examples, FAST sinteringincludes heating the film in the range from about 500° C. to about 600°C. and applying a D.C. electric field to the thin film.

In any of the processes set forth herein, the FAST sintering may includeheating the film in the range from about 400° C. to about 1000° C. andapplying an A.C. electric field to the thin film. In any of theprocesses set forth herein, the FAST sintering may include heating thefilm in the range from about 500° C. to about 900° C. and applying anA.C. electric field to the thin film. In some examples, FAST sinteringincludes heating the film in the range from about 600° C. to about 900°C. and applying an A.C. electric field to the thin film. In someexamples, FAST sintering includes heating the film in the range fromabout 700° C. to about 900° C. and applying an A.C. electric field tothe thin film. In some examples, FAST sintering includes heating thefilm in the range from about 800° C. to about 900° C. and applying anA.C. electric field to the thin film. In some examples, FAST sinteringincludes heating the film in the range from about 500° C. to about 800°C. and applying an A.C. electric field to the thin film. In someexamples, FAST sintering includes heating the film in the range fromabout 500° C. to about 700° C. and applying an A.C. electric field tothe thin film. In some examples, FAST sintering includes heating thefilm in the range from about 500° C. to about 600° C. and applying anA.C. electric field to the thin film.

In certain examples, the processes set forth herein include providing anunsintered thin film by casting a film according to a casting processesset forth in the instant disclosure.

In some of the processes disclosed herein, the sintering occurs betweeninert setter plates. In some examples, when the sintering occurs betweeninert setter plates, a pressure is applied by the setter plates onto thesintering film. In certain examples, the pressure is between 0.1 and1000 pounds per square inch (PSI). In some examples, the pressure is 0.1PSI. In some examples, the pressure is 0.2 PSI. In some examples, thepressure is 0.3 PSI. In some examples, the pressure is 0.4 PSI. In someexamples, the pressure is 0.5 PSI. In some examples, the pressure is 0.6PSI. In some examples, the pressure is 0.7 PSI. In some examples, thepressure is 0.8 PSI. In some examples, the pressure is 0.9 PSI. In someexamples, the pressure is 1 PSI. In some examples, the pressure is 2PSI. In other examples, the pressure is 10 PSI. In still others, thepressure is 20 PSI. In some other examples, the pressure is 30 PSI. Incertain examples, the pressure is 40 PSI. In yet other examples, thepressure is 50 PSI. In some examples, the pressure is 60 PSI. In yetother examples, the pressure is 70 PSI. In certain examples, thepressure is 80 PSI. In other examples, the pressure is 90 PSI. In yetother examples, the pressure is 100 PSI. In some examples, the pressureis 110 PSI. In other examples, the pressure is 120 PSI. In still others,the pressure is 130 PSI. In some other examples, the pressure is 140PSI. In certain examples, the pressure is 150 PSI. In yet otherexamples, the pressure is 160 PSI. In some examples, the pressure is 170PSI. In yet other examples, the pressure is 180 PSI. In certainexamples, the pressure is 190 PSI. In other examples, the pressure is200 PSI. In yet other examples, the pressure is 210 PSI. In some of theabove examples, the pressure is 220 PSI. In other examples, the pressureis 230 PSI. In still others, the pressure is 240 PSI. In some otherexamples, the pressure is 250 PSI. In certain examples, the pressure is260 PSI. In yet other examples, the pressure is 270 PSI. In someexamples, the pressure is 280 PSI. In yet other examples, the pressureis 290 PSI. In certain examples, the pressure is 300 PSI. In otherexamples, the pressure is 310 PSI. In yet other examples, the pressureis 320 PSI. In some examples, the pressure is 330 PSI. In otherexamples, the pressure is 340 PSI. In still others, the pressure is 350PSI. In some other examples, the pressure is 360 PSI. In certainexamples, the pressure is 370 PSI. In yet other examples, the pressureis 380 PSI. In some examples, the pressure is 390 PSI. In yet otherexamples, the pressure is 400 PSI. In certain examples, the pressure is410 PSI. In other examples, the pressure is 420 PSI. In yet otherexamples, the pressure is 430 PSI. In some other examples, the pressureis 440 PSI. In certain examples, the pressure is 450 PSI. In yet otherexamples, the pressure is 460 PSI. In some examples, the pressure is 470PSI. In yet other examples, the pressure is 480 PSI. In certainexamples, the pressure is 490 PSI. In other examples, the pressure is500 PSI. In yet other examples, the pressure is 510 PSI. In some of theabove examples, the pressure is 520 PSI. In other examples, the pressureis 530 PSI. In still others, the pressure is 540 PSI. In some otherexamples, the pressure is 550 PSI. In certain examples, the pressure is560 PSI. In yet other examples, the pressure is 570 PSI. In someexamples, the pressure is 580 PSI. In yet other examples, the pressureis 590 PSI. In certain examples, the pressure is 600 PSI. In otherexamples, the pressure is 610 PSI. In yet other examples, the pressureis 620 PSI. In some examples, the pressure is 630 PSI. In otherexamples, the pressure is 640 PSI. In still others, the pressure is 650PSI. In some other examples, the pressure is 660 PSI. In certainexamples, the pressure is 670 PSI. In yet other examples, the pressureis 680 PSI. In some examples, the pressure is 690 PSI. In yet otherexamples, the pressure is 700 PSI. In certain examples, the pressure is710 PSI. In other examples, the pressure is 720 PSI. In yet otherexamples, the pressure is 730 PSI. In some other examples, the pressureis 740 PSI. In certain examples, the pressure is 750 PSI. In yet otherexamples, the pressure is 760 PSI. In some examples, the pressure is 770PSI. In yet other examples, the pressure is 780 PSI. In certainexamples, the pressure is 790 PSI. In other examples, the pressure is800 PSI. In yet other examples, the pressure is 810 PSI. In otherexamples, the pressure is 820 PSI. In certain aforementioned examples,the pressure is 830 PSI. In still others, the pressure is 840 PSI. Insome other examples, the pressure is 850 PSI. In certain examples, thepressure is 860 PSI. In yet other examples, the pressure is 870 PSI. Insome examples, the pressure is 880 PSI. In yet other examples, thepressure is 890 PSI. In certain examples, the pressure is 900 PSI. Inother examples, the pressure is 910 PSI. In yet other examples, thepressure is 920 PSI. In some examples, the pressure is 930 PSI. In otherexamples, the pressure is 940 PSI. In still others, the pressure is 950PSI. In some other examples, the pressure is 960 PSI. In certainexamples, the pressure is 970 PSI. In yet other examples, the pressureis 980 PSI. In some examples, the pressure is 990 PSI. In yet otherexamples, the pressure is 1000 PSI.

In some examples, the setter plates can be porous. In some otherexamples, the setter plates are not porous. In other instance, thesetter plates may be made of a garnet material described herein. In someexamples, the setter plates can be porous garnet setter plates. In otherinstance, the setter plates may be made of zirconia. In some examples,the setter plates can be porous zirconia setter plates. In otherinstance, the setter plates may be made of a metal material describedherein. In some examples, the setter plates can be porous metal setterplates.

In some examples, the garnet-based setter plates are useful forimparting beneficial surface properties to the sintered film. Thesebeneficial surface properties include flatness and conductivity usefulfor battery applications. These beneficial properties also includepreventing Li evaporation during sintering. These beneficial propertiesmay also include preferencing a particular garnet crystal structure. Incertain processes disclosed herein, the inert setter plates are selectedfrom porous zirconia, graphite or conductive metal plates. In some otherof these processes, the inert setter plates are graphite. In yet otherprocesses, the inert setter plates are conductive metal plates.

vi. Bilayer and Trilayer Sintering

In some examples, the films which are sintered are provided as layers ofa garnet-based electrolyte in contact with a metal layer which is thenin contact with another garnet-based electrolyte layer.

vii. Heat Sintering

In some embodiments, disclosed herein is a process of making an energystorage electrode, including providing an unsintered thin film; whereinthe unsintered thin film includes at least one member selected from thegroup consisting of a garnet-based electrolyte, an active electrodematerial, a conductive additive, a solvent, a binder, and combinationsthereof. In some examples, the processes further include removing thesolvent, if present in the unsintered thin film. In some examples, theprocess optionally includes laminating the film to a surface. In someexamples, the process includes removing the binder, if present in thefilm. In some examples, the process includes sintering the film, whereinsintering comprises heat sintering. In some of these examples, heatsintering includes heating the film in the range from about 700° C. toabout 1200° C. for about 1 to about 600 minutes and in atmosphere havingan oxygen partial pressure in the range of 10¹ atm to 10⁻²¹ atm.

In some embodiments, disclosed herein is a process of making an energystorage electrode, including providing an unsintered thin film; whereinthe unsintered thin film includes at least one member selected from thegroup consisting of a Garnet-type electrolyte, an active electrodematerial, a conductive additive, a solvent, a binder, and combinationsthereof. In some examples, the processes further include removing thesolvent, if present in the unsintered thin film. In some examples, theprocess optionally includes laminating the film to a surface. In someexamples, the process includes removing the binder, if present in thefilm. In some examples, the process includes sintering the film, whereinsintering includes field assisted sintering (FAST). In some of theseexamples, FAST sintering includes heating the film in the range fromabout 500° C. to about 900° C. and applying a D.C. or A.C. electricfield to the thin film.

In any of the processes set forth herein, the unsintered thin film mayinclude a Garnet-type electrolyte. In other processes, the unsinteredthin film may include an active electrode material. In still otherprocesses, the unsintered thin film may include a conductive additive.In certain processes, the unsintered thin film may include a solvent. Incertain processes, the unsintered thin film may include a binder.

In any of the processes set forth herein, heat sintering may includeheating the film in the range from about 700° C. to about 1200° C.; orabout 800° C. to about 1200° C.; or about 900° C. to about 1200° C.; orabout 1000° C. to about 1200° C.; or about 1100° C. to about 1200° C. Inany of the processes set forth herein, heat sintering can includeheating the film in the range from about 700° C. to about 1100° C.; orabout 700° C. to about 1000° C.; or about 700° C. to about 900° C.; orabout 700° C. to about 800° C. In any of the processes set forth herein,heat sintering can include heating the film to about 700° C., about 750°C., about 850° C., about 800° C., about 900° C., about 950° C., about1000° C., about 1050° C., about 1100° C., about 1150° C., or about 1200°C. In any of the processes set forth herein, heat sintering can includeheating the film to 700° C., 750° C., 850° C., 800° C., 900° C., 950°C., 1000° C., 1050° C., 1100° C., 1150° C., or 1200° C. In any of theprocesses set forth herein, heat sintering can include heating the filmto 700° C. In any of the processes set forth herein, heat sintering caninclude heating the film to 750° C. In any of the processes set forthherein, heat sintering can include heating the film to 850° C. In any ofthe processes set forth herein, heat sintering can include heating thefilm to 900° C. In any of the processes set forth herein, heat sinteringcan include heating the film to 950° C. In any of the processes setforth herein, heat sintering can include heating the film to 1000° C. Inany of the processes set forth herein, heat sintering can includeheating the film to 1050° C. In any of the processes set forth herein,heat sintering can include heating the film to 1100° C. In any of theprocesses set forth herein, heat sintering can include heating the filmto 1150° C. In any of the processes set forth herein, heat sintering caninclude heating the film to 1200° C.

In any of the processes set forth herein, the processes may includeheating the film for about 1 to about 600 minutes. In any of theprocesses set forth herein, the processes may include heating the filmfor about 20 to about 600 minutes. In any of the processes set forthherein, the processes may include heating the film for about 30 to about600 minutes. In any of the processes set forth herein, the processes mayinclude heating the film for about 40 to about 600 minutes. In any ofthe processes set forth herein, the processes may include heating thefilm for about 50 to about 600 minutes. In any of the processes setforth herein, the processes may include heating the film for about 60 toabout 600 minutes. In any of the processes set forth herein, theprocesses may include heating the film for about 70 to about 600minutes. In any of the processes set forth herein, the processes mayinclude heating the film for about 80 to about 600 minutes. In any ofthe processes set forth herein, the processes may include heating thefilm for about 90 to about 600 minutes. In any of the processes setforth herein, the processes may include heating the film for about 100to about 600 minutes. In any of the processes set forth herein, theprocesses may include heating the film for about 120 to about 600minutes. In any of the processes set forth herein, the processes mayinclude heating the film for about 140 to about 600 minutes. In any ofthe processes set forth herein, the processes may include heating thefilm for about 160 to about 600 minutes. In any of the processes setforth herein, the processes may include heating the film for about 180to about 600 minutes. In any of the processes set forth herein, theprocesses may include heating the film for about 200 to about 600minutes. In any of the processes set forth herein, the processes mayinclude heating the film for about 300 to about 600 minutes. In any ofthe processes set forth herein, the processes may include heating thefilm for about 350 to about 600 minutes. In any of the processes setforth herein, the processes may include heating the film for about 400to about 600 minutes. In any of the processes set forth herein, theprocesses may include heating the film for about 450 to about 600minutes. In any of the processes set forth herein, the processes mayinclude heating the film for about 500 to about 600 minutes. In any ofthe processes set forth herein, the processes may include heating thefilm for about 1 to about 500 minutes. In any of the processes set forthherein, the processes may include heating the film for about 1 to about400 minutes. In any of the processes set forth herein, the processes mayinclude heating the film for about 1 to about 300 minutes. In any of theprocesses set forth herein, the processes may include heating the filmfor about 1 to about 200 minutes. In any of the processes set forthherein, the processes may include heating the film for about 1 to about100 minutes. In any of the processes set forth herein, the processes mayinclude heating the film for about 1 to about 50 minutes.

viii. Laminating

In some of the processes set forth herein the laminating includesapplying a pressure less than 1000 pounds per square inch (PSI) andheating the film. In other embodiments, the laminating includes applyinga pressure less than 750 pounds per square inch (PSI) and heating thefilm. In some other embodiments, laminating includes applying a pressureless than 700 pounds per square inch (PSI) and heating the film. Inother embodiments, the laminating includes applying a pressure less than650 pounds per square inch (PSI) and heating the film. In some otherembodiments, laminating includes applying a pressure less than 600pounds per square inch (PSI) and heating the film. In other embodiments,the laminating includes applying a pressure less than 550 pounds persquare inch (PSI) and heating the film. In some other embodiments,laminating includes applying a pressure less than 500 pounds per squareinch (PSI) and heating the film. In other embodiments, the laminatingincludes applying a pressure less than 450 pounds per square inch (PSI)and heating the film. In some other embodiments, laminating includesapplying a pressure less than 400 pounds per square inch (PSI) andheating the film. In other embodiments, the laminating includes applyinga pressure less than 350 pounds per square inch (PSI) and heating thefilm. In some other embodiments, laminating includes applying a pressureless than 300 pounds per square inch (PSI) and heating the film. Inother embodiments, the laminating includes applying a pressure less than250 pounds per square inch (PSI) and heating the film. In some otherembodiments, laminating includes applying a pressure less than 200pounds per square inch (PSI) and heating the film. In other embodiments,the laminating includes applying a pressure less than 150 pounds persquare inch (PSI) and heating the film.

In some other embodiments, laminating includes applying a pressure lessthan 100 pounds per square inch (PSI) and heating the film. In otherembodiments, the laminating includes applying a pressure less than 50pounds per square inch (PSI) and heating the film. In some otherembodiments, laminating includes applying a pressure less than 10 poundsper square inch (PSI) and heating the film. Some of the laminatingprocesses set forth herein include heating the film is heated to about80.C. Some of the laminating processes set forth herein include heatingthe film is heated to about 25° C. to about 180° C. Some of thelaminating processes are substantially uniaxial, whereas some of thelaminating processes set forth herein include substantially isostaticpressure application.

In some of the processes disclosed herein, the laminating step includeslaminating an unsintered thin film electrolyte to a composite electrode;wherein the composite electrode includes at least one member selectedfrom the group consisting of an electrolyte, an active electrodematerial, a conductive additive, and combinations thereof. In certain ofthese embodiments, the composite electrode includes an electrolyte. Incertain other of these embodiments, the composite electrode includes anactive electrode material. In some other of these embodiments, thecomposite electrode includes a conductive additive.

VIII. Applications

In some examples, including any of the foregoing, set forth herein is anelectrochemical cell, which includes an electrolyte, powder, pellet,film, multiphase film, or monolith set forth herein.

In some examples, including any of the foregoing, set forth herein is abattery, which includes an electrochemical cell described herein.

In some examples, including any of the foregoing, set forth herein is anelectric vehicle, which includes an electrochemical cell describedherein.

In some examples, including any of the foregoing, set forth herein is abattery, which includes an electrolyte, powder, pellet, film, multiphasefilm, or monolith set forth herein.

In some examples, including any of the foregoing, set forth herein is anelectric vehicle, which includes a battery described herein.

EXAMPLES

Scanning electron microscopy (SEM) was performed in a FEI Quanta 400scanning electron microscope, a Helios 600i, or a Helios 660 FIB-SEM.XRD was performed in a Bruker D8 Advance ECO or a Rigaku Miniflex 2.Cross-section imaging was performed using a FEI Quanta 400F ScanningElectron Microscope (SEM). The cross-section was prepared by fracturingspecimen and followed by a thin layer of Au coating. Electricalimpedance spectroscopy (EIS) and conductivity measurements wereperformed with a Biologic VMP3, VSP, VSP-300, SP-150, or SP-200instrument. DC cycling was performed with an Arbin BT-2043 or BT-G.Chemical reagents and solvents were purchased commercially and usedwithout purification, unless otherwise noted. Electrochemical cells wereconstructed with blocking electrodes unless specified otherwise.

Example 1 Making a Powder Having a Primary Cubic Phase Lithium-StuffedGarnet With Trace Amounts of Secondary Phase Inclusions

This Example shows how to make a powder, which is primarily cubic phaselithium-stuffed garnet, but which includes trace amounts of secondaryphase inclusions in the primary phase.

In this example, a cubic phase lithium-stuffed garnet powder,characterized as Li₇La₃Zr₂O₁₂-(0.22-0.025)Al₂O₃, was prepared. A mixturewas first prepared which included 61.4 g of lithium hydroxide, 195.5 gof lanthanum oxide, 99.6 g of zirconium oxide and 53.6 g of aluminumnitrate nonahydrate. This mixture was placed in a Nalgene jar withYttria stabilized Zirconia media and 2-propanol. The mixture was ballmilled for 18-28 hours to reduce the mixture particle size. 2-propanolwas removed from the mixture using a roto-evaporation tool. Theresulting powder was dried. Once the powder was dried, the powder wascrushed and sieved through an 80-mesh sieve. The sieved powder wasplaced in an alumina (Al₂O₃) crucible and heated in a box furnace at therate of 2-8° C./min to 700-1100° C. for a 4-8 hour dwell time . Theresulting calcined powder was collected and analyzed by XRD, the resultsof which are shown in FIG. 2 (bottom plot labeled Calcined Powder). Thevertical dash lines in FIG. 2 are a reference pattern which indicatesthe XRD peaks for lithium-stuffed garnet having the chemical formulaLi₇La₃Zr₂O₁₂(x)Al₂O₃, wherein x represents the solubility range of Al₂O₃in Li₇La₃Zr₂O₁₂. FIG. 2 shows that the calcined powder includeslithium-stuffed garnet and also includes secondary phases. The secondaryphases are indicated by the XRD peaks which are not associated by thevertical dash reference pattern lines.

Example 2 Making a Sintered Pellet From the Powder of Example 1

This Example shows how to make a sintered pellet.

The calcined powder from Example 1 was further processed by attritionmilling in a solvent to a median particle size of d₅₀=2.7 μm. Into themilled particle slurry was dissolved poly-vinyl-butyryl polymeric binderin a proportion of 4% wt relative to the weight of inorganic solids(i.e., Li₇La₃Zr₂O₁₂(x)Al₂O₃, wherein x represents the solubility rangeof Al₂O₃ plus any secondary phases). This slurry was dried, and theresulting powder crushed and sieved, through an 80-mesh sieve. Thesieved powder was pressed in a 13 mm die under 4000 lbs, and theresulting pellets were sintered at 1000-1250° C. for 4-8 hours. Theresulting sintered pellet was analyzed by XRD, the results of which areshown in FIG. 2 (top plot labeled Sintered Pellet). FIG. 2 shows that inthe sintered pellet, the entire XRD pattern is primarilyLi₇La₃Zr₂O₁₂(x)Al₂O₃, wherein x represents the solubility range of Al₂O₃in Li₇₋La₃Zr₂O₁₂. The small peaks associated with the secondary phasesin the calcined powder are less apparent (i.e., not present in largeenough quantities) in the sintered pellet.

The metal composition of the sintered pellet was measured by inductivelycoupled plasma spectroscopy (ICP), the results of which are shown inTable 1 (below). The results show a slight deviation from the batchedcomposition (Li_(6.4)La₃Zr₂O₁₂−0.175Al₂O₃). The slightly higher Alcontent observed in the sintered pellets is due to reaction with theAlumina crucibles used to process the material.

TABLE 1 ICP Results Element Li La Zr Al Batched Molar 6.4 3.00 2.00 0.35ratio of mixture in Example 1 before calcination ICP Molar ratio 6.33.08 2.00 0.446 sintered pellet in Example 2

Example 3 Making a Pellet Using the Powder Having a Primary Cubic PhaseLithium-Stuffed Garnet With More Secondary Phase Inclusions Than inExample 1

This Example shows how to make a powder which is primarily cubic phaselithium-stuffed garnet but which includes more secondary phaseinclusions in the primary phase than in Example 1.

In this example, a cubic phase lithium-stuffed garnet powder,characterized as Li₇La₃Zr₂O₁₂(0.5)Al₂O₃, was prepared. A mixture wasfirst prepared which included 63.0 g of lithium hydroxide, 181.0 g oflanthanum oxide, 92.2 g of zirconium oxide and 141.8 g of aluminumnitrate nonahydrate. As batched, this mixture had the followingempirical molar ratios of constituent atoms: Li_(7.1)La₃Zr₂O₁₂−0.5Al₂O₃.This mixture was placed in a Nalgene jar with Yttria stabilized Zirconiamedia and 2-propanol. The mixture was ball milled for 18-28 hours toreduce the mixture particle size. 2-propanol was removed from themixture using a roto-evaporation tool. The resulting powder was dried.Once the powder was dried, the powder was crushed and sieved through an80-mesh sieve. The sieved powder was placed in an alumina (Al₂O₃)crucible and heated in a box furnace at the rate of 2-8° C./min to700-1100° C. for a 4-8 hour dwell time. The resulting calcined powderwas collected and analyzed by XRD, the results of which are shown inFIG. 3 (top plot labeled Calcined Powder). The vertical dash lines inFIG. 2 are a reference pattern which indicates the XRD peaks forlithium-stuffed garnet having the chemical formula Li₇La₃Zr₂O₁₂(x)Al₂O₃,wherein x represents the solubility range of Al₂O₃ in Li₇La₃Zr₂O₁₂. FIG.2 shows that the calcined powder includes lithium-stuffed garnet andalso includes secondary phases. The secondary phases are indicated bythe XRD peaks which are not associated by the vertical dash referencepattern lines. In addition to the dashed lines, several otherdiffraction lines are observed corresponding to the secondary phasesLiAlO₂, LaAlO₃, and Li₂ZrO₃.

After calcination the chemical composition of the powder was determinedby inductively coupled plasma spectroscopy (ICP), the results of whichare shown in Table 2 (below). A small amount of Li loss occurred duringprocessing in addition to a relatively minor increase in aluminumcontent, due to reaction with the alumina crucibles.

Example 4 Making A Sintered Pellet From the Powder of Example 1

This Example shows how to make a sintered pellet.

The calcined powder from Example 3 was further processed by attritionmilling in a solvent to a median particle size of d₅₀=2.7 μm. Into themilled particle slurry was dissolved poly-vinyl-butyryl polymeric binderin a proportion of 2-4% wt relative to the weight of inorganic solids(i.e. , Li₇La₃Zr₂O₁₂(x)Al₂O₃, wherein x represents the solubility rangeof Al₂O₃ plus any secondary phases). This slurry was dried, and theresulting powder crushed and sieved, through a 80-mesh sieve. The sievedpowder was pressed in a 13 mm die under 4000 lbs, and the resultingpellets were sintered at 1000-1150° C. for 4-6 hours. The resultingsintered pellet was analyzed by XRD, the results of which are shown inFIG. 3 (bottom plot labeled Sintered Pellet)

The metal composition of the sintered pellet was measured by inductivelycoupled plasma spectroscopy (ICP), the results of which are shown inTable 2 (below).

TABLE 2 ICP Results Element Li La Zr Al Batched Molar 7.1 3.0 2.0 1.00ratio of mixture in Example 3 before calcination ICP Molar ratio of 6.973.0 2.0 1.05 calcined powder in Example 3 ICP Molar ratio 6.74 3.0 2.01.04 sintered pellet in Example 4

FIG. 3 shows that the sintered pellet has less secondary phaseinclusions than the calcined powder. However, there were more secondaryphase inclusions in the calcined powder and sintered pellet fromExamples 3 and 4, respectively, than in the calcined powder and sinteredpellet from Examples 1 and 2, respectively.

Table 2 shows that the sintered pellet had an increased relative amountof lithium compared to the calcined powder, but little change in theamounts of the other components.

Example 5 Making a Pellet of Lithium-Stuffed Garnet and Secondary Phases

This Example shows how to make a sintered pellet. In this example, thesieved, binder-coated, downsized powder from Example 3 was pressed in auniaxial press at 5000 psi to form a 13 mm diameter green pellet. Thegreen pellet was placed on platinum setters in a tube furnace. Thebinder was removed by heating the green pellet at a rate of 2-8° C./minto a maximum temperature of 120-200° C. for a 2-6 hour dwell time at themaximum temperature. Next, the heated pellet was further heated at arate of 2-8° C./min to a maximum temperature of 200-500° C. for a 2-4hour dwell time. The resulting pellet was then sintered by heating thepellet at a heating rate of 2-8° C./min to a maximum temperature of1100-1175° C. for a dwell time of 2-6 hour dwell time at that maximumtemperature. A series of these pellets was prepared. The density of eachpellet was measured using the Archimedes process. The density for thelithium-stuffed garnet pellets prepared according to this Example rangedfrom greater than 95% to 98.5%, inclusive of lithium-stuffed garnet andthe secondary phase inclusions.

Example 6 Making a Green Tape of Lithium-Stuffed Garnet With SecondaryPhase Inclusions

This Example shows how to make a green tape, which can be sintered toform a thin film which is primarily cubic phase lithium-stuffed garnetbut which includes secondary phase inclusions in the primary phase.

In this example, the calcined garnet powder from Example 3 was downsizedwith an equal mass of solvent using attrition mill. The slurry was thendried using a roto-evaporation process. 50 g of the resulting downsizedpowder, 6 g of a dispersant, 18 g of 2-butanone and ethanol mixture wereadded to a Nalgene jar and ball milled for 24 hours. A binder solutionof an acrylic in 2-butanone was prepared, and, along with a plasticizer,was added to the Nalgene jar from previous step. This mixture was placedon a roller mill on slow speed for 24 hours of ball milling.

The garnet slurry was cast on a silicone coated Mylar carrier using adoctor blade with a blade gap height set at 350 μm. The resulting greentape was dried at room temperature for one hour.

Example 7 Making a Green Tape of Lithium-Stuffed Garnet With SecondaryPhase Inclusions

This Example shows how to make a green tape, which can be sintered toform a thin film which is primarily cubic phase lithium-stuffed garnetbut which includes secondary phase inclusions in the primary phase.

In this example, the calcined garnet powder from Example 3 was downsizedwith a solvent using attrition mill. The slurry was then dried using aroto-evaporation process. 50 g of the resulting downsized 4 μm sizedpowder, 6 g a dispersant, 18 g of a mineral spirits and 2-propanolmixture (2:1 ratio by weight mineral spirits:2-propanol) was added to aNalgene jar and ball milled for 24 hours. A binder solution wasprepared, which included polyvinylbutyral (PVB) binder in ethanol andxylenes.

This mixture was placed on a roller mill on slow speed for 24 hours ofball milling. The garnet slurry was cast on a silicone coated Mylarcarrier using a doctor blade with a blade gap height set at 350 μm. Theresulting green tape was dried at room temperature for one hour.

Example 8 Making a Sintered Lithium-Stuffed Garnet Thin Films WithSecondary Phase Inclusions

In this example, the garnet green tape from Example 6-7 was punchedusing a 16 mm diameter punch. The resulting circular shaped discs wereplaced between two square setter plates also composed of sinteredgarnet. The circular shaped discs were sintered in a 3″ diameter tubefurnace under the following protocols: heating rate was 1-5° C./minheating rate to 400° C.-700° C., followed by a dwell time for 2 hoursunder dry argon. This was followed by a 0.5-10° C./min heating rate to1125° C. with a dwell time of 6 hour under dry argon Hz/argon. Thisprocess produced a sintered thin film having secondary phase inclusions.SEM of this sintered thin film is shown in FIGS. 1A, 1B and 9.

The green tape has more secondary phases than in the sintered film. Thereaction to form garnet is driven to completion in the highertemperature and longer time during sintering.

In FIG. 1A, 101 indicates lithium-stuffed garnet particles. 102indicates secondary phase inclusion lithium aluminate (LiAlO₂). 103 alsoshows an inclusion in lithium-stuffed garnet particles.

In FIG. 1B, 104 indicates lithium-stuffed garnet particles. 105indicates secondary phase inclusion lithium aluminate (LiAlO₂). 106 alsoshows lithium zirconate (LiZr₂O₃) inclusion in lithium-stuffed garnetparticles. Lanthanum aluminate is also likely present but it is nearlyindistinguishable by back-scatter electron microscopy (BSE).

In FIGS. 9, 901, 902, 903, and 904, indicate four phases—lithium-stuffedgarnet, lithium aluminate (LiAlO₄). lithium zirconate, and lanthanumaluminate.

The sintered films were annealed at 700-1000° C. as set forth in U.S.patent application Ser. No. 15/007,908, filed Jan. 27, 2016, entitledANNEALED GARNET ELECTROLYTE SEPARATORS, the contents of which are hereinincorporated by reference in their entirety for all purposes.

XRD analysis of the films pre- and post-annealing is shown in FIG. 4. InFIG. 4, the top plot shows an XRD pattern for a thin film, batched asLi₇La₃Zr₂O₁₂(1)Al₂O₃, post-annealing. The plot second from the top plotshows an XRD pattern for a thin film, batched as Li₇La₃Zr₂O₁₂(1)Al₂O₃,pre-annealing. The plot third from the top plot shows an XRD pattern fora thin film, batched as Li₇La₃Zr₂O₁₂(0.22)Al₂O₃, post-annealing. Thebottom plot shows an XRD pattern for a thin film, batched asLi₇La₃Zr₂O₁₂(0.22)Al₂O₃, pre-annealing.

The results show pyrochlore (La₂Zr₂O₇) present in the post-annealedLi₇₋La₃Zr₂O₁₂(0.22)Al₂O₃ but not in the post-annealedLi₇La₃Zr₂O₁₂(1)Al₂O₃.

The results show an improved thermal stability on account of thesecondary phases present in Li₇La₃Zr₂O₁₂(1)Al₂O₃.

The ASR of the film was measured by electrical impedance spectroscopy atnegative 15° C. The results are shown in FIG. 8. A symmetricelectrochemical stack was provided having Li metal electrodes and thesintered thin film electrolyte in this Example therebetween. Thisconfiguration is referred to a symmetric cell Li|garnet|Li cell. EISspectroscopy was performed on this symmetric cell. The second semicirclein the Nyquist plot is the interfacial resistance, approximately 200Ω inthe measurement shown (1765Ω-1538Ω); the ASR is area*resistance=0.5cm²×200Ω=100 Ωcm².

The sintered thin film was analyzed by back-scattered electron (BSE) SEMmicroscopy. Focused ion beam was used to reveal a cross section.Back-scattered electron (BSE) imaging mode was used to identify chemicalcontrast between different phases. Both lithium-stuffed garnet andLaAlO₃, being rich in Lanthanum, appear very similar under BSE imagingand therefore were not easily separated. However, both LiAlO₂ andLi₂ZrO₃ appeared with differing contrast and were readily identified.Image processing software was used to quantify the relative proportionof these two phases in this image. See FIG. 12. The volume % results ofthis are shown below in Table 3:

TABLE 3 Quantification of Secondary Phases by Backscattered ElectronImaging in SEM. H Sample % LiAlO₂ % Li₂ZrO₃ % LaAlO3* 1 7.48 1.52 2 9.825.6 3 7.19 2.48 0.15 4 11 1.91 Average 8.76 2.32

FIG. 12 shows an image used for BSE analysis.

Example 9 Properties of Garnet Thin Films With Secondary PhaseInclusions

Films of Example 6-7 were studied by a number of different techniques.

The d₅₀ grain size of the thin films was determined, the results ofwhich are set forth in FIG. 5.

The conductivity of the thin films was determined, the results of whichare set forth in FIG. 7.

FIG. 7 shows d₅₀ grain size on the left vertical axis. The molar amountof Li per LLZO is shown on the right vertical axis. The molar amount ofAl per LLZO is shown on the y-axis. This plot shows large sinteredgrains at high Li amounts. The plot shows small sintered grains at highAl amounts. Smaller sintered grains are associated with a higher densitysince the smaller grains can pack together in a denser fashion than canlarger grains.

These results show that at high Al amounts, wherein secondary phaseinclusions are present, the thin films here have an improvedsinterability property. The thin films herein, which have secondaryphase inclusions, can be sintered denser than phase purse LLZO can besintered.

Example 10 Testing A Lithium-Stuffed Garnet Thin Film

A full electrochemical cell was assembled having the sintered thin filmof Example 8 as a solid-state electrolyte. The cathode included a nickelmanganese cobalt oxide cathode active material. The anode includedLi-metal foil. The electrochemical cell was cycled between 2.7-4.5V vsLi, at a C/3 rate, and at 45° C. The results of discharge energy versuscycle count are shown in FIG. 10.

The electrochemical cell included a gel catholyte. The cell wasmaintained at a pressure of about 20-300 psi. The gel electrolyteincluded ethylene carbonate:ethyl-methyl-carbonate (EC:EMC) in a 3:7 w/wratio+1M LiPF6 at 2 w/w FEC.

Example 11 Testing Fracture Strength of a Lithium-Stuffed Garnet ThinFilm

In this example, garnet films similar to the one in Example 6-7 wasselected for strength measurements.

A ring-on-ring flexural strength test was performed on the series ofsintered thin films. The results of which are shown in FIG. 11. FIG. 11shows that high RoR strength was been achieved for these samples.

Example 12 Example Showing Quantitative XRD

Phases in sintered thin films were quantified by Quantitative XRD asfollows: XRD diffraction patterns were analyzed using a software programcalled TOPAS developed by Bruker. This software preformed Rietveldrefinement by comparing the measured pattern with a calculated patternbased on crystal structure(s) from ICDD PDF-4+ database. Mass fractionswere determined using the physical properties of each phase and the peakintensity and crystal parameters from the calculated pattern.

The foregoing description of the embodiments of the disclosure has beenpresented for the purpose of illustration; it is not intended to beexhaustive or to limit the claims to the precise forms disclosed.Persons skilled in the relevant art can appreciate that manymodifications and variations are possible in light of the abovedisclosure.

The language used in the specification has been principally selected forreadability and instructional purposes, and it may not have beenselected to delineate or circumscribe the inventive subject matter. Itis therefore intended that the scope of the disclosure be limited not bythis detailed description, but rather by any claims that issue on anapplication based hereon. Accordingly, the disclosure of the embodimentsis intended to be illustrative, but not limiting, of the scope of thedisclosure, which is set forth in the following claims.

1. A bilayer comprising: a metal foil or metal powder bonded to one sideof a sintered lithium-stuffed garnet thin film; wherein the sinteredlithium-stuffed garnet thin film thickness is less than 50 μm andgreater than 10 nm; wherein the sintered lithium-stuffed garnet thinfilm includes a primary cubic phase lithium-stuffed garnet characterizedby the chemical formula Li_(A)La_(B)Al_(C)M″_(D)Zr_(E)O_(F), wherein5<A<8; 1.5<B<4; 0.1<C<2; 0≤D<2; 1<E<3; 10<F<13; and M″ is selected fromthe group consisting of Mo, W, Nb, Y, Ta, Ga, Sb, Ca, Ba, Sr, Ce, Hf,and Rb; and a secondary phase inclusion; wherein: the primary cubicphase lithium-stuffed garnet is present in the sintered lithium-stuffedgarnet thin film at about 70-99.9 vol % with respect to the volume ofthe sintered lithium-stuffed garnet thin film; and the secondary phaseinclusion is present in the sintered lithium-stuffed garnet thin film atabout 0.1-30 vol % with respect to the volume of the sinteredlithium-stuffed garnet thin film.
 2. The bilayer of claim 1, wherein themetal is Ni; Al; Fe; stainless steel; an alloy of Ni, Cu, Al, or Fe; ora combination of Ni, Cu, Al, or Fe.
 3. The bilayer of claim 1, whereinthe metal is selected from Ni, Al, Fe, stainless steel, and combinationsthereof.
 4. The bilayer of claim 1, wherein the metal an alloy of Ni,Cu, Al, or Fe; or a combination of Ni, Cu, Al, or Fe.
 5. The bilayer ofclaim 1, wherein the bilayer comprises a metal foil.
 6. The bilayer ofclaim 5, wherein the metal foil is a current collector.
 7. The bilayerof claim 5, wherein the metal foil has a thickness of less than 20 μm.8. The bilayer of claim 5, wherein the metal foil has a thickness ofless than 10 μm.
 9. The bilayer of claim 5, wherein the metal foil has athickness of less than 5 μm.
 10. A trilayer comprising the bilayer ofclaim 1, further comprising a second lithium-stuffed garnet thin film incontact with the metal foil or metal powder of the bilayer.
 11. Thebilayer of claim 1, wherein the thickness of the lithium-stuffed garnetthin film is less than 30 μm.
 12. The bilayer of claim 1, wherein thethickness of the lithium-stuffed garnet thin film is less than 20 μm.13. The bilayer of claim 1, wherein the lithium-stuffed garnet thin filmhas a surface roughness of less than 5 μm.
 14. The bilayer of claim 1,wherein the lithium-stuffed garnet thin film has a median grain size ofbetween 0.1 μm to 10 μm.
 15. The bilayer of claim 1, wherein thelithium-stuffed garnet thin film has a median grain size of between 1.0μm to 5.0 μm.
 16. An electrochemical stack comprising at least two ormore bilayers of claim 1.